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A Low-Noise Low Dropout Regulator in $0.18{\mu}m$ CMOS  

Han, Sang-Won (Department of Wireless Communications Engineering, Kwangwoon University)
Kim, Jong-Sik (Department of Wireless Communications Engineering, Kwangwoon University)
Won, Kwang-Ho (Ubiquitous Computing Center, Korea Electronics Technology Institute)
Shin, Hyun-Chol (Department of Wireless Communications Engineering, Kwangwoon University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.46, no.6, 2009 , pp. 52-57 More about this Journal
Abstract
This paper presents a low-noise low-dropout linear regulator that is suitable for on-chip integration with RF transceiver ICs. In the bandgap reference, a stacked diode structure is adopted for saving silicon area as well as maintaining low output noise characteristic. Theoretical analysis for supporting the approach is also described. The linear regulator is fabricated in $0.18{\mu}m$ CMOS process. It operates with an input voltage range of 2.2 V - 5 V and provide the output voltage of 1.8 V and the output current up to 90 mA. The measured line and load regulation is 0.04%/V and 0.46%, respectively. The output noise voltage is measured to be 479 nV/$^\surd{Hz}$ and 186 nV/$^\surd{Hz}$ from 100 Hz and 1 kHz offset, respectively.
Keywords
Bandgap reference; Regulator; LDO; CMOS; RFIC;
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