• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.184-193
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• 2012

In this paper, a 5-bit 2-GS/s 2-way time interleaved pipeline ADC for high-speed serial link receiver is demonstrated. Implemented as a current-mode amplifier, the stage ADC simultaneously processes the tracking and residue amplification to achieve higher sampling rate. In addition, each stage incorporates a built-in 1-tap FIR equalizer, reducing inter-symbol-interference (ISI）without an extra digital post-processing. The ADC is designed in a 110nm CMOS technology. It comsumes 91mW from a 1.2-V supply. The area excluding the memory block is $0.58{\times}0.42mm^2$. Simulation results show that when equalizer is enabled, the ADC achieves SNDR of 25.2dB and ENOB of 3.9bits at 2.0GS/s sample rate for a Nyquist input signal. When the equalizer is disengaged, SNDR is 26.0dB for 20MHz-1.0GHz input signal, and the ENOB of 4.0bits.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.12
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• pp.20-26
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• 1999

A CMOS 6-bit 100MSPS ADC for DBS receiver is designed. The proposed ADC is composed of folding block, latch block, and digital block. The cascode interpolating block and kickback reduced latch are proposed with a high speed architecture. To verify the performance of ADC, simulations are carried out by HSPICE. The ADC achieves a clock frequency of 100MHz with a power dissipation of 40mW for 3 V supply voltage. The active chip area is $1500{\mu}m{\times}1000{\mu}m$with $0.65{\mu}m$ 2-poly 2-metal CMOS process. Further, INL and DNL are within ${\pm}0.6LSB$, ${\pm}0.5LSB$, respectively. SNDR is about 33dB at 10MHz input frequency.

• Journal of IKEEE
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• v.22 no.4
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• pp.1218-1221
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• 2018

This paper presents a low-power 0.6-V 10-bit 200-kS/s double rail-to-rail successive approximation register (SAR) analog-to-digital converter (ADC). The proposed scheme allows input signal with 4 times power which is compared with conventional one by applying proposed rail-to-rail scheme, and that improves signal-to-noise ratio(SNR) of NTV SAR ADCs. The prototype was designed using 65-nm CMOS technology. At a 0.6-V supply and $2.4-V_{pp}$ (differential) and 200-kS/s, the ADC achieves an SNDR of 59.87 dB and consumes 364.5-nW. The ADC core occupies an active area of only $84{\times}100{\mu}m^2$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.2
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• pp.95-103
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• 2011

This paper proposes a 6b 1.2 GS/s 47.8 mW 0.17 $mm^2$ 65 nm CMOS ADC for high-rate wireless personal area network systems. The proposed ADC employs a source follower-free flash architecture with a wide input range of 1.0 $V_{p-p}$ at a 1.2 V supply voltage to minimize power consumption and high comparator offset effects in a nanometer CMOS technology. The track-and-hold circuits without source followers, the differential difference amplifiers with active loads in pre-amps, and the output averaging layout scheme properly handle a wide-range input signal with low distortion. The interpolation scheme halves the required number of pre-amps while three-stage cascaded latches implement a skew-free GS/s operation. The two-step bubble correction logic removes a maximum of three consecutive bubble code errors. The prototype ADC in a 65 nm CMOS demonstrates a measured DNL and INL within 0.77 LSB and 0.98 LSB, respectively. The ADC shows a maximum SNDR of 33.2 dB and a maximum SFDR of 44.7 dB at 1.2 GS/s. The ADC with an active die area of 0.17 $mm^2$ consumes 47.8 mW at 1.2 V and 1.2 GS/s.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.1
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• pp.14-21
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• 2011

A 10b 500MS/s $0.13{\mu}m$ CMOS ADC is proposed for 4G wireless communication systems such as a LTE-Advanced and SDR The ADC employs a calibration-free single-channel folding architecture for low power consumption and high speed conversion rate. In order to overcome the disadvantage of high folding rate, at the fine 7b ADC, a cascaded folding-interpolating technique is proposed. Further, a folding amplifier with the folded cascode output stage is also discussed in the block of folding bus, to improve the bandwidth limitation and voltage gain by parasitic capacitances. The chip has been fabricated with $0.13{\mu}m$ 1P6M CMOS technology, the effective chip area is $1.5mm^2$. The measured results of INL and DNL are within 2.95LSB and l.24LSB at 10b resolution, respectively. The SNDR is 54.8dB and SFDR is 63.4dBc when the input frequency is 9.27MHz at sampling frequency of 500MHz. The ADC consumes 150mW($300{\mu}W/MS/s$) including peripheral circuits at 500MS/s and 1.2V(1.5V) power supply.

• Journal of the Institute of Convergence Signal Processing
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• v.9 no.1
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• pp.54-61
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• 2008

This paper presents a new TIQ based CMOS flash 6-bit ADC to process digital signal in real time. In order to improve the conversion speed of ADC by designing new logic or layout of ADC circuits, a new design method is proposed in encoding logic circuits. The proposed encoding circuits convert analog input into digitally encoded double base number system(DBNS), which uses two bases unlike the normal binary representation scheme. The DBNS adopts binary and ternary radix to enhance digital arithmetic processing capability. In the DBNS, the addition and multiplication can be processed with just shift operations only. Finding near canonical representation is the most important work in general DBNS. But the main disadvantage of DBNS representation in ADC is the fan-in problem. Thus, an equal distribution algorithm is developed to solve the fan-in problem after assignment the prime numbers first. The conversion speed of simulation result was 1.6 GSPS, at 1.8V power with the Magna $0.18{\mu}m$ CMOS process, and the maximum power consumption was 38.71mW.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.3
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• pp.160-165
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• 2009

A 12b 2 MS/s cyclic ADC processing 3.3 Vpp single-ended rail-to-rail input signals is presented. The proposed ADC demonstrates an offset voltage less than 1 mV without well-known calibration and trimming techniques although power supplies are directly employed as voltage references. The SHA-free input sampling scheme and the two-stage switched op-amp discussed in this work reduce power dissipation, while the comparators based on capacitor-divided voltage references show a matched full-scale performance between two flash sub ADCs. The prototype ADC in a $0.18{\mu}m$ 1P6M CMOS demonstrates the effective number of bits of 11.48 for a 100 kHz full-scale input at 2 MS/s. The ADC with an active die area of $0.12\;mm^2$ consumes 3.6 m W at 2 MS/s and 3.3 V (analog)/1.8 V (digital).

• The Transactions of The Korean Institute of Electrical Engineers
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• v.68 no.1
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• pp.90-97
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• 2019

The charge redistribution digital-to-analog converter(CR-DAC) is often used for successive approximation register analog-to-digital converter(SAR ADC) that requiring low power consumption and small circuit area. However, CR-DAC is required 2 to the power of N unit capacitors to generate reference voltage for successive approximation of the N-bit SAR ADC, and many unit capacitors occupy large circuit area and consume more power. In order to improve this problem, this paper proposes SAR ADC using series capacitor DAC. The series capacitor DAC is required 2(1+N) unit capacitors to generate reference voltage for successive approximation and charges only two capacitors of the reference generation block. Because of these structural characteristics, the SAR ADC using series capacitor DAC can reduce the power consumption and circuit area. Proposed SAR ADC was designed in CMOS 180nm process, and at 1.8V supply voltage and 500kS/s sampling rate, proposed 6-bit SAR ADC have signal-to-noise and distortion ratio(SNDR) of 36.49dB, effective number of bits(ENOB) of 5.77-bit, power consumption of 294uW.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.4A
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• pp.439-446
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• 2004

This paper describes high speed and low power design techniques for an 8-bit 500MSamples/s CMOS 2-step ADC. Instead of the conventional closed-loop architecture, the newly proposed ADC adopts open-loop architecture and uses a reset-switch to reduce loading time in an environment of big parasitic-capacitances of mux-array. An analog-latch is also used to reduce power consumption. Simulation result shows that the ADC has the SNDR of 46.91㏈ with a input frequency of 103MHz at 500Msample/s and consumes 203㎽ with a 1.8V single power supply. The chip is designed with a 0.18mm 1-poly 6-metal CMOS technology and occupies active area of 760${\mu}{\textrm}{m}$*800${\mu}{\textrm}{m}$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.3
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• pp.60-68
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• 2008

This work describes a re-configurable 10MS/s to 100MS/s, low-power 10b two-step pipeline ADC operating at a power supply from 0.5V to 1.2V. MOS transistors with a low-threshold voltage are employed partially in the input sampling switches and differential pair of the SHA and MDAC for a proper signal swing margin at a 0.5V supply. The integrated adjustable current reference optimizes the static and dynamic performance of amplifiers at 10b accuracy with a wide range of supply voltages. A signal-isolated layout improves the capacitor mismatch of the MDAC while a switched-bias power-reduction technique reduces the power dissipation of comparators in the flash ADCs. The prototype ADC in a 0.13um CMOS process demonstrates the measured DNL and INL within 0.35LSB and 0.49LSB. The ADC with an active die area of $0.98mm^2$ shows a maximum SNDR and SFDR of 56.0dB and 69.6dB, respectively, and a power consumption of 19.2mW at a nominal condition of 0.8V and 60MS/s.