An SOI(Silicon-On-Insulator) LD(Lateral Double-diffused)MOS with a recessed source structure is proposed to improve the on-resistance and the breakdown voltage. The recessed source structure can decrease the on-resistance by reducing the path of electron current, also increase the breakdown voltage by extending the effective length of gate field plate. Simulation results by TSUPREM4 and MEDICI have shown that the on-resistance of the LDMOS with a recessed source was 26% lower than conventional LDMOS. The breakdown voltage of proposed device was found to be 45V while that of conventional device was 36.5 V. At the same breakdown voltage of 36.5V, the on-resistance of the LDMOS with a recessed source was 41% lower than that of conventional structure.

Piezoelectric properties of PMN-PZT ceramics with $CeO_2$ impurity were investigated. Mechanical quality factor, $Q_m$ of 1792, 1285 and the electromechanical coupling coefficient, $k_p$ of 0.52, 0.54 were obtained from the specimen with 0.25 and 0.5 mole % $CeO_2$ respectively. Curie temperature was decreased with the addition of $CeO_2$ while the electric coercive field was proportional to the amount of impurity. Based on the system ceramics with 0.5 mole % cerium oxide, a Rosen type piezoelectric transformer was fabricated and tested. Voltage step-up ratios of 230 and 13 were obtained from the transformer at no load and $100 k\Omega$ resistance, respectively. Experimental results showed a potential of the transformer for the practical use coupled with the expected strength increase by the grain size refinement.

A planar inductively coupled $CH_4/H_2/Ar$plasma was used to investigate dry etch characteristics of GaN as a function of input power, RF bias power, and etch gas composition. Etch rate of GaN increased with input power up to 600 W and was saturated at the higher power. Also, the etch rates increased with increasing RF bias power, composition of $CH_4$ and Ar gas. We achieved the maximum etch rate of $930{\AA}$/min at the input power 400 W, RF bias power 250 W, and operational pressure 10 mTorr. This paper shows that smooth etched surface having roughness less than 1 nm in rms can be obtained by using planar inductively coupled plasma with $CH_4/H_2/Ar$ gas chemistry.

We report a new in-situ fluorine passivation method without in implantation by employing excimer laser annealing of $SiO_{x}F_{y}$/a-Si structure and its effects on p-channel poly-Si TFTs. The proposed method doesn't require any additional annealing step and is a low temperature process because fluorine passivation is simultaneous with excimer-laser-induced crystallization. A in-situ fluorine passivation by the proposed method was verified form XPS analysis and conductivity measurement. From experimental results, it has been shown that the proposed method is effective to improve the electrical characteristics, specially field-effect mobility, and the electrical stability of p-channel poly-Si TFTs. The improvement id due to fluorine passivation, which reduces the trap state density and forms the strong Si-F bonds in poly-Si channel and $SiO_2/poly-Si$ interface. From these results, the high performance poly-Si TFTs canbe obtained by employing the excimer-laser-induced fluorine passivation method.

Degradation diagnosis of XLPE insulated URD cables was accomplished through out new method, which was to be analyzed by non-electrical experiments and synthesized by degradation points. To supplement this method, It was also carried out using several electrical analyses. Tan$\delta$ had commonly a different tendency by means oftemperature and frequency and also appeared higher at the outer part rather than innerpart of insulator. PD-q increased generally in proportion to the applied voltage andshowed regular patterns in relation to the thickness of insulator. Breakdown voltageswere measured and breakdown lifetimes were predicted appling for Weibull distribution function. As a result, breakdown lifetime in failure cables was shorter up to$\fraction one-third$ times than that in general cables. It was very available to estimate cable degradation using above method, but it needs further study on XLPE insulated URD cables in order to improve reliability.

Resonance radiation trapping has a great influence on the characteristics of vacuum ultraviolet(VUV) photon emissions in AC PDP cell. We calculate the spatial andspectral distributions of VUV photons, which are radiated by excited Xe in AC PDP cell by Monte Carlo method. Especially a dip in the spectrum at center frequency is discovered both in simulation and in experiment. We give a physical explanation of this phenomenon by the concept of frequency-dependent mean free path of VUV photons.

The paper provides the results of microstructure analysis and dielectricproperties of porcelain suspension insulators. The evaluation of characteristics was also made as a function of the manufacturers and fabricated years for the experimental specimens which had been used in real distribution lines. Even though the series A contained higher alumina contents than the series B, the densification of series A was lower than that of series B, resulting from much porosity. The microstructure investigation confirmed that series A had much porosity than series B. The series A contained quartz $(SiO_2),\; mullite\; (Al_6Si_2O_{13}),\; corundum(Al_2O_3),\; and cristobalite\; (SiO_2)$ phases. However, the series B had no cristobalite phase which had very high thermal expansion coefficient. Also, the tan$\delta$of series A was more abruptly increased than that of series B as increasing temperature. The elevated temperature may make much expansion of cristobalite crystal than other crystals, resulting in crack and puncture inside cap during the summer days.

In this study, a relationship between DC discharge and the radiated electromagnetic waves is investigated by measuring electromagnetic waves using a biconical antenna and a spectrum analyzer. The characteristics of frequency spectrum ofthe radiated electromagnetic waves was measured at the atmospheric pressure in Liquid Nitrogen $(LN_2)$ during partial discharges in nonuniform and uniform electric field depend on positive DC power. From this experiment results, it was confirmed that when partial discharge was produced in Liquid Nitrogen and Air, the signal of partial discharge was detected by this experiment and the analysis method. It is considered thatthese results obtained from this investigation may be used as fundamental data for diagnosis and prediction of insulation on the equipments ultra-high voltage, superconducting and cryogenic applications.

As a fundamental study for FED tubeless packaging, sodalime-sodalime electrostatic bonding was performed by using on the developed bonding mechanism. Thebonding properties of the bonded sodalime-sodalime structure were investigated through SEM and SIMS analyses. Mo-tip FEA was vacuum-packaged by the developed bonding process and the packaged device generated the field emission current.

We fabricated AC-TFEL device having cone-shaped Si micro-tip reflector array based on the process which have been conventionally employed for the Si-tip field emitter array in FED system. As a result, the AC-TFEL device having a new geometrical structure could generate well concentrated visible white-light from 3600 reflectors/pixel under bipolar pulse excitation mode only by edge-emission mechanism.

The paper represents the effects of the drive-in process parameters on the residual stress profile of the $p^+$ silicon film. Since the residual stress profile is notuniform along the direction normal to the surface, the residual stress is assumed to be a polynomial function of the depth. All the coefficients of the polynomial can be determined by measuring of the thicknesses and the deflections of cantilevers and the deflection of a rotating beam with a surface profiler meter and a microscope. As the drive-in temperature or the drive-in time increases, the boron concentration decreases and the magnitude of the average residual tensile stress decreases. Then, near the surface of the $p^+$ film the residual tensile stress is transformed into the residual compressive stress and its magnitude increases.

Si-to-Si electrostatic bonding was carried out by employing LSG interlayer instead of conventional Corning #7740 interlayer in order to improve bonding properties. The surface roughness and dielectric breakdown field of the LSG interlayers deposited on Si substrates were investigated. Also, the bonding interface, bonding strength and bonding mechanism were discussed for the electrostatically-bonded Si-Si wafer pairs having LSG interlayers.

To do breath alcohol measurement, a sensor is necessary that it can detect low alcohol gas concentration of 0.01% at least. In this work, a capacitance-type alcohol gas sensor using porous silicon layer is developed to measure low alcohol gas concentration. The sensor using porous silicon layer has some sensitivity at room temperature by very large effective surface area, but there is still much room for improvement. In this experiment, we measured the capacitance of the sensor under 254 nm UV light on the porous silicon layer, in which alcohol solution was kept in a flask at 25, 35, and $45^{\circ}C$ by a heater. As the result, the improvement of sensitivity by illuminating UV light was observed. The increasing rate of the capacitance was shown to be double more than those measured under UV-off state. It is supposed that UV light activates response of the oriental and interfacial polarizations which have slow relaxation time for AC field.