P(VDF/TrFE) copolymer thin films with 70/30 and 80/20 mol% VDF (polyvinylidene fluoride) and TrFE (trifluoroethylene) rates were prepared by using a vapor deposition method, During thin films were prepared, the substrate temperatures were maintained at 30 $^{\circ}C$ and 120 $^{\circ}C$, and the heating source temperature was fixed at 350 $^{\circ}C$. Contary to PVDF homopolymer, P(VDF/TrFE) copolymers showed the Curie point(Tc) below the melting point. The Curie point (Tc) and the melting point of the P(VDF/TrFE) copolymers were changed as a function of substrate temperature and the VDF mol%. The Curie point and the melting point of P(VDF/TreFE) thin films decreased and increased with increasing substrate temperature, respectively. Also with increasing VDF mol%, the melting point decreased slightly, however the Curie point increased.

In this study, we investigated the optical properties of sub-wavelength a-Si thin film transmission gratings, especially the polarization effect, the phase difference and the birefringence by using linearly polarized He-Ne laser beam (632.8nm). The a-Si transmission grating of the thickness $of < 0.1 \mum$ with four-type period($\Lambda = 0.4 \mum and 0.6 \mum$ for sub-wavelength and $\Lambda = 1.0 \mum and 1.4 \mum$ for above-wavelength) on quartz substrates have been fabricated using 50 KeV Ga+ Focused-Ion-Beam(FIB) Milling and $CF_4$Reactive-Ion-Etching(RIE) method. Finally, we obtained the trating array of a-Si thin film with a period $0.4 \mum, 0.6 \mum, 1.0 \mum, 1.4 \mum$ which have nearly equal finger spacing and width, sucessfully. Especially, for gratings with $\Lambda = 0.6 \mum(linewidth=0.25 \mum, linespace=0.35\mum), the \etamax at \theta_в=17.0^{\circ}$ is estimated to be 96%. As the results, we believe that the sub-wavelength grating arrayed a-Si thin film has the applicability as the optical device and components.

CuNi alloy films are deposited by co-sputtering of dual targets (Cu and Ni, respectively). Effects of the co-sputtering conditions, such as powers applied to the targets, deposition pressures, and substrate temperatures, on the structural and electrical properties of deposited films are systematically investigated. The composition ratio of Ni/Cu is almost linearly decreased by increasing the DC power applied to the Cu target from 25.6 W to 69.7 W with the RF power applied to the Ni target unchanged(140 W). it is noted that the chamber pressure during deposition and the film thickness give rise to a change of the Ni/Cu ratio within the films deposited. The former may be due to a higher sputtering yield of Cu atom and the latter due to the re-sputtering phenomenon of Cu atoms on the surface of deposited film. The film deposited at higher pressures or at lower substrate temperatures have a smaller crystallite size, a higher electrical resistivity, and much more voids. This may be attributed to a lower surface mobility of sputtered atoms over the substrate.

The floating-gate MOSFETs were fabricated by employing 1.5 m n-well CMOS process and their optical-electrical properties were characterized for the application to CMOS image sensor system. Based on the simulation of energy band diagram and operating mechanism of parasitic BJT were proposed as solutions for the increase of photo-current value. In order to realize them, MOSFETs having multi-gate and channel structures were fabricated and 60% increase in photo-current was achieved through enlargement of depletion layer and parallel connection of parasitic BJTs by channel division.

PZT thin films(4000A) have prepared onto 1737 corning glass and ITO coated glass substrates with a RF magnetron sputtering system using Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$ceramic target, Electrical properties of PZT thin film deposited after ITO coated glass were P${\gamma}$ was decreased by 25% after 109cycles, respectively. With the RTA treatment duration and temperature increased, the crystallization of PZT thin films were enhanced, however, the leakage current density became higher. The leakage current mechanism was found to be space charge conduction by the defects and oxygen vacancies existing in PZT and PZT/bottom electrode interfaces.

In this paper, propagation and damping characteristics of PD pulse in GIS are analyzed using SNM. These characteristics are very important to make a diagnosis and protection of accident in GIS. SNM is numerical method in time domain and very useful method to analyze 3-Dimensional structure such as GIS. GIS modeling is made simply as the form of coaxial cable and then spacers are inserted in it. The scattering and reflection in the GIS are appeared and damping characteristics of PD pulse are shown. When simulation using SNM compare to measurement, two results are similar.

New package process for PDP was proposed based on the glass-to-glass vacuum-electrostatic bonding process and tubeless packaging concept derived from the previous study. Hermeticity and operating performance of PDP test panel through the seal-off process application and the possibility for practical use might be high if the process simplicity and productivity-related effort was sequentially carried out.