The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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Si-to-Si Electrostatic Bonding using LSG Film as an Interlayer

LSG Interlayer를 이용한 실리콘-실리콘 정전 열 접합

  • 주병권 (KIST 정보재료소자센터 연구원) ;
  • 정지원 (KIST 정보재료소자센터 연구원) ;
  • 이덕중 (KIST 정보재료소자센터 연구원) ;
  • 이윤희 (KIST 정보재료소자센터 연구원) ;
  • 최두진 (연세대 세라믹공학과 KIST 정보재료소자센터 연구원) ;
  • 오명환 (KIST 정보재료소자센터 연구원)
  • Published : 1999.09.01
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Abstract

Si-to-Si electrostatic bonding was carried out by employing LSG interlayer instead of conventional Corning #7740 interlayer in order to improve bonding properties. The surface roughness and dielectric breakdown field of the LSG interlayers deposited on Si substrates were investigated. Also, the bonding interface, bonding strength and bonding mechanism were discussed for the electrostatically-bonded Si-Si wafer pairs having LSG interlayers.

Keywords

References

  1. J. Electrochem. Soc. v.119 Low temperature electrostatic Si-to-Si seals using sputtered borosilicate glass A.D.Brooks(et al.)
  2. Sensors and Actuators v.A21-A23 Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glass M.Esashi(et al.)
  3. 전기학회논문지 v.46 no.10 전자선 증착된 Corning #7740 interlayer를 이용한 실리콘-실리콘 정전 열 접합 주병권;최우범;이윤희;정성재;이남양;성만영;오명환