Characteristics of half cells of graphite/lithium and LiCoO$_2$/lithium, and full cells of graphite/LiCoO$_2$/ were analyzed by the use of GISOC(the gradual increasing of the state of charge). GISOC analyses generated IIE(the initial intercalation efficiency), which represents lithium intercalation property of the electrode material, and IIC$_{s}$(the initial irreversible capacity by the surface), which represents irreversible reaction between the electrode surface and electrolyte. Linear-fit range of graphite and LiCo/O$_2$electrodes were respectively 370 and 150 mAh/g based on material weight. IIE of graphite and LiCo/O$_2$electrodes were respectively 93∼94 % and 94∼95 %, and IICs of graphite and LiCo/O$_2$electrodes were 15∼17 mAH/g and 0.3∼1.7 mAh/g, respectively. IIE of graphite/LiCo/O$_2$full cell for GX25 and DJG311 as graphite showed 89∼90 %, which IIE value was lower than IIE of half cell of the cathode and the anode. Parameters of IIE and IIC$_{s}$ can also be used to represent not only half cell but also full cell. The characteristics of the full cell can be simulated through the correlative interpretation of potential profile, IIE, and IIC$_{s}$ of half cells.cells.

This paper investigated the characteristics of a newly developed high density hollow cathode plasma (HCP) system and its application for the etching of silicon wafers. We used SF$_{6}$ and $O_2$ gases in the HCP dry etch process. Silicon etch rate of $0.5\mu\textrm{m}$/min was achieved with $SF_6$$O_2$plasma conditions having a total gas pressure of 50mTorr, and RF power of 100 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. The results of this experiment can be used for various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications.s.

The microwave dielectric properties and microstructure of the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramic were, investigated. The specimens were prepared by the conventional mixed oxide method with sintering temperature of $1350^{\circ}C$∼$1425^{\circ}C$. According to the XRD patterns, the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramics have the $Mg_4Ta_2O_{9}$ phase(hexagonal). The dielectric constant($\varepsilon$$_{\gamma}$) and density increased with sintering temperature and mole fraction of x. To improve the quality factor and the temperature coefficient of resonant frequency, TiO$_2$($\varepsilon_{r}$=100, $Q{\times}f_{r}$=40,000GHz, $\tau$$_{f}$=＋450 ppm/$^{\circ}C$) was added in $Mg_4Ta_2O_{9}$ ceramics. In the case of the $0.7Mg_4Ta_2O_{9}$-$0.3TiO_2$ and the $0.6Mg_4Ta_2O_{9}$-$0.4TiO_2$ceramics sintered at $1400^{\circ}C$ for 5hr., the microwave dielectric properties were $\varepsilon$$_{\gamma}$=11.72, $Q{\times}f_{r}$=126,419GHz, $\tau_{f}$=-31.82 ppm/$^{\circ}C$ and $\varepsilon_{r}$=12.19, $Q{\times}f_{r}$=109,411GHZ, $\tau$$_{f}$= -17.21 ppm/$^{\circ}C$, respectively.

AIN thin film has been deposited on the $AI_2$$O_3$substrate with reactive radio frequency( RF) magnetron sputtering method. In this work, elelctromechanical coupling coefficient of AIN thin film was increased with an increase of AIN thin film thickness, and the maximum value was 0.11%. Insertion loss of SAW device was decreased with an increase of AIN thin film thickness and the minimum value was 33［㏈］. SAW velocity of IDTs/AIN/$AI_2$$O_3$structure and IDTs/AIN/$AI_2$$O_3$/Si structure were about 5480［㎧］and 5040［㎧］respectively.

The RF inductive discharge or inductively coupled plasma (ICP) continues to attract growing attention as an effective plasma source in many industrial applications, the best known of which are plasma processing and lighting technicology. Although most practical ICP operate at 13.56 [MHz]and 2.65 [MHz], the trend to reduce the operating frequency is clearly recognizable from recent ICP developments. In an electrodeless fluorescent lamp, the use of a lower operating frequency simplifies and reduces cost of rf matching systems and rf generators and can eliminate capacitive coupling between the inductor coil and plasma, which could be a strong factor in wall erosion and plasma contamination. In this study, the configuration of ferrite and fixture which operates at the frequency of 2.65[MHz]was discussed as functions of the ferrite thickness and distance by using the electromagnetic simulation software (Maxwell 2D).

This paper describes investigations of the UHF(Ultra High Frequency) PD(Partial Discharge) measuring technology designed for monitoring of PD in high power apparatus. Based on the spiral antenna theory, the hole type sensor for GIS with metal flange spacer and injection type sensor for oil filled transformer are developed. The experimental results show measurement characteristics of the PD sensor for several artificial defects in gas-insulated system(GIS) and oil transformer. Moreover, we proposed the new $\phi$-f-q method for the purpose of condition assessment of high power apparatus.

In darkroom condition, it was observed that a white picture pattern lasted several minutes leaves a recognizable trace in subsequent black background picture. Although this is not a serious problem for the most current public display or home TV applications, the image sticking should be minimized for future high quality multimedia display applications. In order to characterize this picture memory effect having relatively long time scale, spatially resolved luminance measurement and light waveform measurement have been performed. Pixels located at the outer boundary of white pattern previously displayed shows highest luminance. These cells also shows fastest ignition at the ramp up reset sequence. The luminance and ignition voltage differences between boundary cells and the other cells are increased with display duration and number of sustain-pulse. It is speculated that image sticking observed at the boundary cell is originated from the transport of charged particles and re-deposition of reactive species such as Mg, O provided from strong sustain discharge region.

The objective of this survey is to characterize personal magnetic field exposure of the general population in Korea. Participants for the survey on magnetic field exposure were selected randomly in some occupations. Those wore the magnetic field meter for about 25∼28 hours and the measured data were stored in the meter. In this first step survey, the number of participant is 244 and for the second step, about 400 participants will be surveyed in the near future. The statistics of the 24-hour exposure data are the major concern of this survey. However the survey provided the opportunity to analyze exposures corresponding to different types of activities. It was analyzed by separating periods of time corresponding to the following activities: entire 24-hour period, in bed, at work and by occupation. Therefore the database will be able to be established to analyze the status of personal magnetic field exposure and safety.

This paper shows the simulation of electric field distribution and removal characteristics of Escherichia coli for water discharge tube with globular $SiO_2$. At the experiments of the removing Escherichia coli used the discharge tube with globular dielectric($SiO_2$), because the electric field is increased when applied voltage is increased, the removed ratio of Escherichia coli was related with increasing of applied voltage. When a passing number of test water in water discharge tube is increased, the removed ratio of Escherichia coli is increased because passing number of territory with electric field is increased. When diameter of globular dielectric($SiO_2$) is increased, the removed time of Escherichia coli was decreased because electric field for dielectric polarization of globular dielectric($SiO_2$) was increased. Also, the removed ratio of Escherichia coli of the water discharge tube with globular dielectric($SiO_2$) was measured higher than the removal ratio of the discharge tube without globular dielectric($SiO_2$)

This paper deals with the behaviors of magnetic flux density near down-conductors by lightning currents. The background on the principle of magnetic flux density measurements using the RL self-integrating magnetic field sensor was described. The magnetic flux density measuring device consisting of RL self-integrating magnetic field sensor and differential amplifier was designed and fabricated. The frequency bandwidth of the magnetic flux density measuring system ranges from 200 Hz to 300 KHz and the response sensitivity was 0.126 $\mu$T/㎷ The distributions of the magnetic flux density near down-conductors due to impulse currents with various rise times were analyzed as a parameter of the bonding conditions and materials of conductor and wiring conduits. The magnetic flux density due to impulse currents was inversely proportional to the distance between the down-conductor and measuring point. The amplitude of the magnetic flux density for PVC Pipe with down-conductor was 72 $\mu$T/㎷ at the distance of 1m and was higher than for steel conduits and coaxial cable. Finally the magnetic flux density is increased with increasing the di/dt it and oscillation frequency of lightning currents in this experimental ranges.

A micromachined self-exited piezoelectric cantilever has been fabricated using PZT(52/48) thin film. For the application to biosensor using antigen-antibody interaction, electromechanical properties such as resonant frequency and quality factor of micromachined piezoelectric cantilever were important factors. Electromechanical properties and resonant behaviors of microfabricated cantilever were simulated by FEA (Finite Element Analysis) using Coventorware$^{TM}$2003. And these characterization of microcantilever were measured by using LDV(Laser Doppler Vibrometer) to compare with FEA data. We present the resonant frequency shift of micromachined piezoelectric cantilevers due to combination of mass loading and change of spring constant by gold deposition. Experimental mass sensitivities of microcantilever were characterized by Au deposition on the backside of microcantilever. Mass sensitivities with $100{\times}300$ ${\mu}{\textrm}{m}$ dimension cantilever from simulation and experimental were 5.56 Hz/ng and 16.8 Hz/ng respectively.y.