This research was a fundamental study for the low temperature sintering of PZTN by glass phase transient processing. To lower the sintering temperature, the glass phase Processing was used. Also to improve the electrical properties, the transient processing was utilized. After characterization, the various analytic techniques, such as Archimedes method for the measuring densification, x-ray diffraction patterns for the quantitative analysis of crystalline phases were utilized. Also the dielectric constant, dissipation factor, and piezoelectric coefficients were measured to evaluate the PZTN sintered at the $950^{\circ}C$ and $1050^{\circ}C$. This was confirmed that the sintering temperature of PZTN was reduced by $950^{\circ}C$ and the electrical properties were improved by the transition processing. Therefore, the glass phase transient processing can be applicable to low the sintering temperature with the dielectric and piezoelectric properties.

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $300\~450^{\circ}C$ and oxygen gas flow rate of $100\~700\;sccm$. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM) and the optical properties of the ZnO were characterized by photoluminescence(PL).

It has been reported that the failure phenomenon and variation of electrical characteristic due to the effect of electrostatic discharge(ESD) in silicon devices. But we had fess reports about the phenomenon due to the ESD in the compound semiconductors. So there are a lot of difficulty to the phenomenon analysis and to select the protection method of main circuits or the devices. It has not been reported that the relation between the ESD stress and GaN devices, which is remarkable to apply the operation in high temperature and high voltage due to the superior material characteristic. We studied that the characteristic variation of the AlGaN/GaN HEMT current, the leakage current, the transconductance(gm) and the failure phenomenon of device due to the ESD stress. We have applied the ESD stress by transmission line pulse(TLP) method, which is widely used in ESD stress experiments, and observed the variation of the electrical characteristic before and after applying the ESD stress. The on-current trended to increase after applying the ESD stress. The leakage current and transconductance were changed slightly. The failure point of device was mainly located in middle and edge sides of the gate, was considered the increase of temperature due to a leakage current. The GaN devices have poor thermal characteristic due to usage of the sapphire substrate, so it have been shown to easily fail at low voltage compared to the conventional GaAs devices.

We investigated compatibilizing effects of electrical properties such as charge distributions and electrical breakdown in blends of low density polyethylene (LDPE) / polystyrene (PS) with poly [styrene-b-(ethylene-co-butylene)-b-styrene] (SEBS), the triblock copolymer. The blends with $70\;wt\%$ of LDPE and $30\;wt\%$ of PS were prepared through a melt blending in a batch type kneader at a temperature of $220^{\circ}C$ when the SEBS content increased up to $10\;wt\%$. Scanning electron microscopy (SEM) was investigated for observation of morphology of LDPE / PS blends increasing SEBS contents. The morphological observation showed that addition of SEBS results in the domain size reduction of the dispersed PS phase and a better interfacial adhesion between LDPE and PS phases. Measurements of space charge distributions for blends was carried out with pulsed electroacoustic (PEA) method. It was possible to observe that the amount of charge storage in the LDPE / PS blends decreased wiか increasing of SEBS content. The location of SEBS at a domain interface enables charges to move from one phase to the other via domain interface and results in a indicative decrease in the amount of space charge for the LDPE / PS blends with SEBS. Electrical breakdown strength of these blends was observed. It was found that the maximum breakdown strength of the blend was 51.55 kV/mm. These results were better than 38.38 kV/mm of LDPE used electrical insulator for cables and were caused by crystalinity of blends. Because the crystalinity of blends were lower than LDPE, electrical breakdown strength of LDPE / PS blends is higher than that of LDPE. We evaluated the possibility of these blends for insulating material substituted LDPE.

The Korean Superconducting Tokamak Advanced Research (KSTAR) tokamak device is being constructed to perform long-pulse, high-beta, advanced tokamak fusion physics experiments. The long-pulse operation requires the non-inductive current drive system such as the Lower-Hybrid Current Drive (LHCD) system. The LHCD system drives the non-inductive plasma current by means of C-band RF with 2-MW CW power and 5-GHz frequency. For the LHCD test experiments, an RF test system is developed. It is composed of a 5-GHz, 1.5-MW pulsed magnetron and a compact pulse modulator with $4\;{\mu}s$ of pulse width. The pulse modulator provides the maximum output voltage of 45 kV and the maximum current of 90 A. It is composed of 7 stages of Pulse Forming Network (PFN), a thyratron tube (E2V, CX1191D), and a pulse transformer with 1:4 step-up ratio. In this paper, the detailed design and the performance test of the pulse modulator are presented.

Big fire such as mountain fire may cause the prevention of the functions of the overhead cables and insulators, which may affect the operation of the transmission lines. In the worst case, this kind of disaster may have a huge effect on the whole industry of a country. However, the study on the effect of the mountain fire on the transmission line is very rare. Therefore, in order to understand the effect of the mountain fire on the polymeric insulator for transmission lines, the author observed the deformation of the sheds of the polymeric insulators and the change of the discs of the porcelain insulators under fire, varying the ignition time using the artificial ignition testing equipment which simulates the mountain fire, and investigated the electrical and mechanical characteristics of the insulators after the ignition test. For the test, the miniature insulators made of polymeric material and porcelain have been utilized. As the result, the following conclusions were obtained. First, the porcelain insulator was degraded in electrical characteristics when the insulator was subjected to the fire for approximately 5 minutes; whereas, the polymeric insulator was not degraded though there were some damage on its sheds. Second, after 20 minute exposure to the fire, the polymeric insulator lost a lot of parts of sheds, but the electrical characteristics was lowered by around $20\%$, but the porcelain insulators were electrically degraded by more than $80\%$.

In this paper a DPDT(Double-Pole Double Through) switch with defected ground structure(DGS) is proposed. The equivalent circuit for the proposed switch structure is derived according to based on equivalent circuit of proposed DGS unit structure. The equivalent circuit parameters of DGS unit are extracted by using the circuit analysis method. The on/off operation of the proposed switch is obtained by varying the capacitance of the varactor diode at the defected ground plane. In the case of ON state, the insertion loss of the fabricated DPDT was shown under 1dB. And in OFF state, we found the rejection characteristic over 20dB at the designed frequency 2.45GHz. The experimental results show excellent insertion loss at on state and isolation at off state.