Quartz crystal in contact with viscoelastic medium was described directly in terms of the electrical equivalent circuit of the system. Stearic acid was used as viscoelastic medium and deposited on the surface of quartz crystal using the Langmuir-Blodgett(LB) method. Impedance properties of quartz crystal coated with LB films which were investigated by using admittance diagram and $Ζ-\theta$ plot a method of impedance analysis. When stearic acid LB film was deposited on the surface of quartz crystal, resonant frequency of quartz crystal was changed about 100 Hz/layer. This result illustrates the ability of the sensor system to detect small amounts of special gas in air.

The response properties of quartz crystal coated with stearic acid LB films to organic gases were investigated by measuring the shift of resonant frequency. Stearic acid was used as a sensing material and deposited on the surface of quartz crystal using the Langmuir-Blodgett(LB) method. The effect of temperature on the quartz crystal coated with stearic acid LB films was also investigated by Scanning Maxwell-stress Microscopy(SMM). As a result, the sensitivity of the quartz crystal coated with LB films to organic gases is dependent on temperature, thickness of LB film and molecular weight of organic gas.

Ferroelectric PZT(30/70)/PZT(70/30) heterolayered thin films were fabricated by spin-coating method on the $Pt/Ti/SiO_2Si$ substrate alternately using(30/70) and PZT(70/30) alkoxide solutions prepared by sol-coating method. The coating and heating procedure was repeated six times to form PZT heterolayered films, and thickness of the film obtained by one-times drying/sintering process was about 40-50 nm. All PZT heterolayered films, showed dense and homogeneous structure without the presence of rosette sturctrue. The relative dielectric constant, remanent polarization and leakage current density of PZT heterolayered films were superior to those of single composition PZT(30/70) and PZT(70/30) films, and those values for the PZT-6 film were 975, $21 \muC/cm^2\; and\; 8\times10^{-9}\; A/cm^2$, respectively. And the PZT-6 heterolayered film showed fairly good fatigue characteristics of remanent polarization and coercive field after application of $10^8$ switching cycles.

Nb silicide was formed on the Si micro-tip arrays in order to improve field emission properties of Si-tip field emitter array. After silicidization of the tips, the etch-back process, by which gate insulator, gate electrode and photoresist were deposited sequentially and gate holes were defined by removing gradually the photoresist by $O_2$ plasma from the surface, was applied. Si nitride film was used as a protective layer in order to prevent oxygen from diffusion into Nb silicide layer and it was identified that the NbSi2 was formed through annealing in $N_2$ ambient at $1100^{\circ}C$ for 1 hour. By the Nb silicide coating on Si tips, the turn-on voltage was decreased from 52.1 V to 32.3 V and average current fluctuation for 1 hour was also reduced from 5% to 2%. Also, the fabricated Nb silicide-coated Si tip FEA emitted electrons toward the phosphor and light emission was obtained at the gate voltage of 40~50 V.

The influence of ambient gases on field emission performance of Mo-field emitter array(FEA) in the frit-sealing step of field emission display(FED) packaging process was investigated. Mo-tip FEA was mounted on the glass substrate having a surrounded frit(Ferro FX11-137) and fired at $415^{\circ}C$ in the ambient gases of air, $N_2$ and Ar. The Ar gas was proved to be most proper ambient among the used gases through evaluating the turn-on voltage and field emission current of the fired Mo-tip FEA devices. It was confirmed that the Mo surface fired in Ar ambient was less oxidized when compared with another ones annealed in air and Ar ambient by the AFM, XPS, AES and SIMS analysis. Finally, the 3.5 inch-sized Mo-tip FED, which was packaged using frit-sealing process in the Ar ambient, was proposed.

A new lateral device entitled SB-DCEST(segmented p-base dual-channel emitter switched thyristor), which suppresses the snapback is proposed and successfully fabricated. The proposed device effectively suppressed the snapback phenomenon by employing the gigh resistance in self-aligned segmented p-base when compared with the conventional DCEST. The experimental results show that the SB-DCEST has the low forward voltage drop of 4.3 V at anode current of $150 A/cm^2$ with the eliminated snap-back regime, while conventional DCEST exhibits higher forward voltage drop of 5.3 V.

Multi-discharge type ozonizer(MDO) using superposed silent discharge has been designed and manufactured. It consists of three electrodes( central electrode, internal electrode, and external electrode ) and double gaps( gap between central electrode and internal electrode, gap between internal electrode and external electrode ). Therefore, ozone is generated by superposing silent discharges generated between the gaps respectively. And the MDO consists of three types of superposed discharge ozonizers according to voltage appling method for each electrode ; A.C. high voltages are applied two of three electrodes with phase difference of 180[˚], the other electrode is a ground. This paper describes that discharge and ozone generation characteristics of MDO which comprising central electrode and internal electrode applied A.C. high voltages with phase difference of 180[˚] respectively, and the grounded external electrode. As a result, the maximum ozone concentration, generation, and yield can be obtained 10208[ppm], 6.4[g/h], and 280[g/kwh] respectively.

Corona discharges form at the surface of a transmission line conductor when the electric-field intensity on the conductor surface exceeds the breakdown strength of air. In order to decrease the electric-field intensity on the conductor surface, a new 6 conductor bundle has been studied. This bundle, hybrid conductor bundle, consists of using a larger subconductor at the bottom two conductor positions in the 6-conductor bundles of each phase of the line. The electric field on these two larger subconductors is reduced which in turn reduces the corona noise. It is shown that this is a better solution for decreasing the electric-field intensity than ether the conventional bundle or the asymmetric bundle proposed by EPRI.

This paper deals with the effect of lightning impulse current on electrical characteristics of ZnO blocks used in distribution lightning arrester. The electrical characteristics of ZnO blocks are degraded by overtime impulse current, and the degraded ZnO block is brought to a thermal runaway and finally destroyed. It is therefore important to estimate the change of electrical characteristics of ZnO blocks. In this study, an impulse current generator which can produce 8/20$[\mus]$, 3[㎄] and 4/10$[\mus]$, 5[㎄] waveform is designed and fabricated to simulate the lightning impulse current of power systems. Total energy applied to the ZnO blocks at each time is 739[J] in 8/20$[\mus]$, and 523[J] in 4/10$[\mus]$, impulse current, respectively. From the experimental results, the 3rd harmonic of the leakage current increases continuously with the number of applied impulse current, but no significant changes in residual voltage and in reference voltage are observed until the ZnO block is destroyed. Also, it is confirmed that the main factor on degradation of ZnO blocks is rather the total energy applied to ZnO blocks than the peak value of the impulse current.