• Journal of the Microelectronics and Packaging Society
• /
• v.24 no.3
• /
• pp.1-6
• /
• 2017

As the performance and density of IC devices increase, especially the clock frequency increases, power grid network integrity problems become more challenging. To resolve these power integrity problems, the use of passive devices such as resistor, inductor, and capacitor is very important. To manage the power integrity with little noise or ripple, decoupling capacitors are essential in electronic packaging. The decoupling capacitors are classified into voltage regulator capacitor, board capacitor, package capacitor, and on-chip capacitor. For next generation packaging technologies such as 3D packaging or wafer level packaging on-chip MIM decoupling capacitor is the key element for power distribution and delivery management. This paper reviews the use and necessity of on-chip decoupling capacitor.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.7 s.349
• /
• pp.29-37
• /
• 2006

This paper presents a new analytical model to suppress RLC resonance effects which inevitably occur in power/ground lines due to on-chip decoupling capacitor and other interconnect circuit parasitics (i.e., package inductance, on-chip decoupling capacitor, and output drivers, etc.). To characterize the resonance effects, the resonance frequency of the circuit is accurately estimated in an analytical manner. Thereby, a decoupling capacitor size to suppress the resonance for a suitable circuit operation is accurately determined by using the estimated resonance frequency. The developed novel design methodology is verified by using $0.18{\mu}m$ process-based-HSPICE simulation.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.2
• /
• pp.202-211
• /
• 2014

The bulk current injection (BCI) and direct power injection (DPI) method have been established as the standards for the electromagnetic susceptibility (EMS) test. Because the BCI test uses a probe to inject magnetically coupled electromagnetic (EM) noise, there is a significant difference between the power supplied by the radio frequency (RF) generator and that transferred to the integrated circuit (IC). Thus, the immunity estimated by the forward power cannot show the susceptibility of the IC itself. This paper derives the real injected power at the failure point of the IC using the power transfer efficiency of the BCI method. We propose and mathematically derive the power transfer efficiency based on equivalent circuit models representing the BCI test setup. The BCI test is performed on I/O buffers with and without decoupling capacitors, and their immunities are evaluated based on the traditional forward power and the real injected power proposed in this work. The real injected power shows the actual noise power level that the IC can tolerate. Using the real injected power as an indicator for the EMS test, we show that the on-chip decoupling capacitor enhances the EM noise immunity.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.4
• /
• pp.146-153
• /
• 2008

In this paper, a integrated phase-locked loop(PLL) as a clock multiphase generator for a high speed serial link is designed. The designed PLL keeps the same bandwidth and damping factor by using programmable current mirror in the whole operation frequency range. Also, the close-loop transfer function and VCO's phase-noise transfer function of the designed PLL are obtained with circuit netlists. The self impedance on board-mounted chip is calculated according to sizes and positions of decoupling capacitors. Especially, the detailed self-impedance analysis is carried out between frequency ranges represented the maximum gain in the close-loop transfer function and the maximum gain in the VCO's phase noise transfer function. We shows PLL's jitter characteristics by decoupling capacitor's sizes and positions from this result. The designed PLL has the wide operating range of 0.4GHz to 2GHz in operating voltage of 1.8V and it is designed 0.18-um CMOS process. The reference clock is 100MHz and PLL power consumption is 17.28mW in 1.2GHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2011.05a
• /
• pp.143-146
• /
• 2011

A 50-MS/s 10-bit pipelined ADC with 1.2Vpp differential input range is proposed in this paper. The designed pipelined ADC consists of eight stage of 1.5bit/stage, one stage of 2bit/stage, digital error correction block, bias & reference driver, and clock generator. 1.5bit/stage is consists of sub-ADC, DAC and gain stage, Specially, a sample-and hold amplifier (SHA) is removed in the designed pipelined ADC to reduce the hardware and power consumption. Also, the proposed bootstrapped switch improves the Linearity of the input analog switch and the dynamic performance of the total ADC. The reference voltage was driven by using the on-chip reference driver without external reference. The proposed pipelined ADC was designed by using a 0.18um 1-poly 5-metal CMOS process with 1.8V supply. The total area including the power decoupling capacitor and power consumption are $0.95mm^2$ and 60mW, respectively. Also, the simulation result shows the ENOB of 9.3-bit at the Nyquist sampling rate.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.10
• /
• pp.31-39
• /
• 2004

This paper illustrates the noise characteristics under chip's core operations according to types of packages and modules for DDR DRAM For analyzing this, the impedance profiles and power noises are analyzed with DRAM chips having commercial TSOP package and commercial FBGA package on TSOP-based DIMM and FBGA-based DIMH In controversy with common concepts, we find that the noise-isolation characteristics of FBGA package are more weak and sensitive on transferred noises than those of the TSOP package. In addition, the simulated results show that the decoupling capacitor locations of modules are more important to control the self and transfer noise characteristics than the lead inductance of the packages. Therefore, satisfying the target spec of the noise suppression and isolation can be achieved through the design of power distribution systems only with considering not only the package types but also the whole module system.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.2
• /
• pp.114-126
• /
• 2013

In this paper, we present a set of methodologies to model the electromagnetic susceptibility (EMS) testing of I/O buffers for mobile system memory based on the bulk current injection (BCI) method. An efficient equivalent circuit model is developed for the current injection probe, line impedance stabilization network (LISN), printed circuit board (PCB), and package. The simulation results show good correlation with the measurements and thus, the work presented here will enable electromagnetic susceptibility analysis at the integrated circuit (IC) design stage.

• Journal of the Microelectronics and Packaging Society
• /
• v.13 no.4
• /
• pp.9-15
• /
• 2006

This paper shows the impedance profile of PEEC(Partial Equivalent Electrical Circuit) PDN(Power Distribution Networks) including core and I/O circuit. Through the simulated results, we find that the core power noise having connection with I/O power is affected by I/O switching. Also, using designed $74{\times}5inch$ DLL(Delay Locked Loop) test board, we analyzed the effect of power noise on operation region of chip. Jitter of a DLL measure for frequency of $50{\sim}400MHz$ and compared with impedance obtained result of simulation. Jitter of a DLL are increased near about frequency of 100MHz. It is reason that the resonant peak of PDNs has an impedance of more the 1ohm on 100MHz. we present the impedance profile of a chip and board for the decoupling capacitor reduced the target impedance. Therefore, power supply network design should be considered not only decoupling capacitors but also core switching current and I/O switching current.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.319-319
• /
• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• Journal of the Microelectronics and Packaging Society
• /
• v.20 no.4
• /
• pp.75-79
• /
• 2013

A power distribution network (PDN) is a network that provides connection between the voltage source supply and the power/ground terminals of a microprocessor chip. It consists of a voltage regulator module, a printed circuit board, a package substrate, a microprocessor chip as well as decoupling capacitors. For power integrity analysis, the board and package layouts have to be transformed into an electrical network of resistor, inductor and capacitor components which may be expressed using the S-parameters models. This modeling process generally takes from several hours up to a few days for a complete board or package layout. When the board and package layouts change, they need to be re-extracted and the S-parameters models also need to be re-generated for power integrity assessment. This not only consumes a lot of resources such as time and manpower, the task of PDN modeling is also tedious and mundane. In this paper, a block-based PDN modeling is proposed. Here, the board or package layout is partitioned into sub-blocks and each of them is modeled independently. In the event of a change in power rails routing, only the affected sub-blocks will be reextracted and re-modeled. Simulation results show that the proposed block-based PDN modeling not only can save at least 75% of processing time but it can, at the same time, keep the modeling accuracy on par with the traditional PDN modeling methodology.