• Title/Summary/Keyword: hspice

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Simultaneous Switching Characteristic Analysis and Design Methodology of High-Speed & High-Density CMOS IC Package (고밀도 고속 CMOS 집적회로에서 동시 스위칭에 의한 패키지 영향해석 및 패키지 설계방법)

  • 박영준;최진우;어영선
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.36C no.11
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    • pp.55-63
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    • 1999
  • A new CMOS If Package design methodology is presented, analyzing the electrical characteristics of a package and its effects on the CMOS digital circuits. An analytical investigation of the package noise effects due to the simultaneous switching of the gates within a chip, i.e., simultaneous switching noise (SSN) is performed. Then not only are novel design formula to meet electrical constraints of the Package derived, but also package design methodology based on the formula is proposed. Further, in order to demonstrate the Proposed design methodology, the design results are compared with HSPICE (a general purpose circuit simulator) simulation for $0.3\mu\textrm{m}$-based CMOS circuits. According to the proposed design procedures, it is shown that the results have excellent agreements with those of HSPICE simulation.

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Modeling and HSPICE analysis of the CMOS image sensor pixel with the complementary signal path (상보형 신호경로 방식의 CMOS 이미지센서 픽셀 모델링 및 HSPICE 해석)

  • Kim, Jin-Su;Jung, Jin-Woo;Kang, Myung-Hun;Noh, Ho-Sub;Kim, Jong-Min;Lee, Jae-Woon;Song, Han-Jung
    • Journal of Sensor Science and Technology
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    • v.17 no.1
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    • pp.41-52
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    • 2008
  • In this paper, a circuit analysis of the complementary CMOS active pixel and readout circuit is carried out. Complementary pixel structure which is different from conventional 3TR APS structure is consist of photo diode, reset PMOS, several NMOSs and PMOSs sets for complementary signals. Photo diode is modelled with Medici device program. HSPICE was used to analyze the variation of the signal feature depending on light intensity using $0.5{\mu}M$ standard CMOS process. Simulation results show that the output signal range is from 0.8 V to 4.5 V. This signal range increased 135 % output dynamic range compared to conventional 3TR pixel in the condition of 5 V power supply.

A design of fractional-N phase lock loop (Fractional-N 방식의 주파수 합성기 설계)

  • Kim, Min-A;Choi, Young-Shig
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.8
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    • pp.1558-1563
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    • 2007
  • In this paper, phase-locked loop (PLL) of a combinational architecture consisting of an adaptive bandwidth and fractional-N is presented to improve performances and reduce the order of ${\Delta}{\Sigma}$ modulator while maintaining equivalent or better performance with fast locking. The architecture of adaptive bandwidth PLL was simulated by HSPICE using 0.35m CMOS parameters. The behavioral simulation of the proposed adaptive bandwidth fractional-N PLL with a ${\Delta}{\Sigma}$ modulator was carried out by using MatLab to determine if the architecture could achieve the objectives. The HSPICE simulation showed that this type of PLL was able to fast locking, and reduce fractional spurs about 20dB.

A Low Spur Phase-Locked Loop with FVCO-sampled Feedforward Loop-Filter (스퍼의 크기를 줄이기 위해 VCO 주기마다 전하가 전달되는 구조의 Feedforward 루프필터를 가진 위상고정루프)

  • Choi, Hyek-Hwan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.10
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    • pp.2387-2394
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    • 2013
  • A low spur phase-locked loop (PLL) with FVCO-sampled feedforward loop-filter has been proposed. Conventional PLL has loop filter made of a resistor and capacitors. The proposed PLL is working stably with the filter consisted of capacitors and a switch. It has been designed with a 1.8V $0.18{\mu}m$ CMOS process and proved by simulation with HSPICE.

Analysis and Modeling of Clock Grid Network Using S-parameter (S-파라미터를 사용한 클락 그리드 네트워크의 분석과 모델링)

  • Kim, Kyung-Ki
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.12
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    • pp.37-42
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    • 2007
  • Clock grid networks are now common in most high performance microprocessors. This paper presents a new effective modeling and simulation methodology for the clock grid using scattering parameter. It also shows the effect of wire width and grid size on the clock skew of the grid. The interconnection of the clock grid is modeled by RC passive elements. The results show that the error is within 10 % comparing to Hspice simulation results.

Statistical Timing Analysis of Partially-Depleted SOI Gates (부분 공핍형 SOI 게이트의 통계적 타이밍 분석)

  • Kim, Kyung-Ki
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.12
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    • pp.31-36
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    • 2007
  • This paper presents a novel statistical characterization for accurate timing analysis in Partially-Depleted Silicon-On-Insulator (PD-SOI) circuits in BSIMSOI3.2 100nm technology. The proposed timing estimate algorithm is implemented in Matlab, Hspice, and C, and it is applied to ISCAS85 benchmarks. The results show that the error is within 5% compared with Monte Carlo simulation results.

Statistical Modeling of 3-D Parallel-Plate Embedded Capacitors Using Monte Carlo Simulation

  • Yun, Il-Gu;Poddar, Ravi;Carastro, Lawrence;Brooke, Martin;May, Gary S.
    • ETRI Journal
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    • v.23 no.1
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    • pp.23-32
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    • 2001
  • Examination of the statistical variation of integrated passive components is crucial for designing and characterizing the performance of multichip module (MCM) substrates. In this paper, the statistical analysis of parallel plate capacitors with gridded plates manufactured in a multilayer low temperature cofired ceramic (LTCC) process is presented. A set of integrated capacitor structures is fabricated, and their scattering parameters are measured for a range of frequencies from 50 MHz to 5 GHz. Using optimized equivalent circuits obtained from HSPICE, mean and absolute deviation is calculated for each component of each device model. Monte Carlo Analysis for the capacitor structures is then performed using HSPICE. Using a comparison of the Monte Carlo results and measured data, it is determined that even a small number of sample structures, the statistical variation of the component values provides an accurate representation of the overall capacitor performance.

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Design of A CMOS Composite Transconductor for Low-voltage Low-power (저전압 저전력 CMOS복합 트랜스컨덕터 설계)

  • 이근호
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.10
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    • pp.65-73
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    • 2002
  • Two CMOS composite transistors with an improved operating region by reducing the threshold voltage are proposed in this paper. And also, as an application of the proposed composite transistors, the transconductor is designed. The proposed composite transistor I and II employ a P-type folded composite transistor and a composite diode in order to decrease the threshold voltage, respectively. The limitation of the operating region of these transistors by current source is described. All circuits are simulated by HSPICE using 0.25${\mu}{\textrm}{m}$ n-well process.

Design of LTPS TFT Level Shifter for System-On-Panel Application (System-On-Panel 적용을 위한 저온 폴리 실리콘 박막 트랜지스터 레벨쉬프터 설계)

  • Lee, Joon-Chang;Jeong, Ju-Young
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.2 s.344
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    • pp.76-83
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    • 2006
  • We proposed a new level shifter circuit architecture. The prposed circuit can provide high output voltage upto 15V by taking 3.3V logic signal compared to the conventional level shifter. The unposed circuit has compatible speed, low power consumption and chip size. We have confirmed the operation by conducting HSPICE simulation.

Design of Differential Voltage-to-Frequency Converter Using Current Conveyor Circuit (전류 컨베어 회로를 이용한 차동전압-주파수 변환기의 설계)

  • Choi, Jin-Ho
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.15 no.4
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    • pp.891-896
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    • 2011
  • This paper describes the differential voltage-to-frequency converter which is realized current conveyor circuits. The output frequency of the differential voltage-to-frequency converter is proportional to the difference of two input voltages. The designed circuit is simulated by HSPICE. The range of input voltage difference is from several volts to several milli-volts. From the simulation results the error is less than from -1.9% to +1.8% compared to the calculated values.