• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.11
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• pp.2541-2547
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• 2010

In this paper, we propose a design technique which replaces logic transistors of 1.2V with medium-voltage transistors of 3.3V having small off-leakage current in repetitive block circuits where speed is not an issue, to implement a low-power eFuse OTP memory IP in the stand-by state. In addition, we use dual-port eFuse cells reducing operational current dissipation by reducing capacitances parasitic to RWL (Read word-line) and BL (Bit-line) in the read mode. Furthermore, we propose an equivalent circuit for simulating program power injected to an eFuse from a program voltage. The layout size of the designed 512-bit eFuse OTP memory IP with a 90nm CMOS image sensor process is $342{\mu}m{\times}236{\mu}m$. It is confirmed by measurement experiments on 42 samples with a program voltage of 5V that we get a good result having 97.6 percent of program yield. Also, the minimal operational supply voltage is measured well to be 0.9V.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.7
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• pp.1455-1462
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• 2012

In this paper, a BCD process based high-reliability 24-bit dual-port eFuse OTP Memory for PMICs is designed. We propose a comparison circuit at program-verify-read mode to test that the program datum is correct by using a dynamic pseudo NMOS logic circuit. The comparison result of the program datum with its read datum is outputted to PFb (pass fail bar) pin. Thus, the normal operation of the designed OTP memory can be verified easily by checking the PFb pin. Also we propose a sensing margin test circuit with a variable pull-up load out of consideration for resistance variations of programmed eFuse at program-verify-read mode. We design a 24-bit eFuse OTP memory which uses Magnachip's $0.35{\mu}m$ BCD process, and the layout size is $289.9{\mu}m{\times}163.65{\mu}m$ ($=0.0475mm^2$).

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.11
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• pp.152-161
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• 1996

This paper descrisbes the implementation of a 20D DCT that can be used for video conference, JPEG, and MPEG-related applications. The implemented DCT consists of two 1-D DCTs and a transposed memory between them, and uses ROM-based multipliers instead of conventional ones. As the system bit length, the minimum bit length that satisfies the accuracy specified by the ITU standard H.261 was chosen through the simulations using the C language. The proposed design uses a dual port RAM for the transposed memory, and processes two bits of input-pixel data simultaneously t ospeed up addition process using two sets of ROMs. The basic system architecture was designed using th Synopsys schematic editor, and internal modules were described in VHDL and synthesized to logic level after simulation. Then, the compass silicon compiler was used to create the final lyout with 0.8um CMOS libraries, using the standard cell approach. The final layout contains about 110, 000 transistors and has a die area of 4.68mm * 4.96mm, and the system has the processing speed of about 50M pixels/sec.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.11 no.6
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• pp.742-750
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• 2018

In this paper, in order to enable zero-layer FTP cell using only 5V MOS devices on the basis of $0.13{\mu}m$ BCD process, the tunnel oxide thickness is used as the gate oxide thickness of $125{\AA}$ of the 5V MOS device at 82A. The HDNW layer, which is the default in the BCD process, is used. Thus, the proposed zero layer FTP cell does not require the addition of tunnel oxide and DNW mask. Also, from the viewpoint of memory IP design, a single memory structure which is used only for trimming analog circuit of PMIC chip is used instead of the dual memory structure dividing into designer memory area and user memory area. The start-up circuit of the BGR (Bandgap Reference Voltage) generator circuit is designed to operate in the voltage range of 1.8V to 5.5V. On the other hand, when the 64-bit FTP memory IP is powered on, the internal read signal is designed to maintain the initial read data at 00H. The layout size of the 64-bit FTP IP designed using the $0.13-{\mu}m$ Magnachip process .is $485.21{\mu}m{\times}440.665{\mu}m$($=0.214mm^2$).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.233-237
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• 2002

A giga-bit DRAM(dynamic random access memory) technology with W/WNx/poly-Si dual gate electrode is presented in 7his papers. We fabricated $0.16\mu\textrm{m}$ CMOS using this technology and succeeded in suppressing short-channel effects. The saturation current of nMOS and surface-channel pMOS(SC-pMOS) with a $0.16\mu\textrm{m}$ gate was observed 330 $\mu\A/\mu\textrm{m}$ and 100 $\mu\A/\mu\textrm{m}$ respectively. The lower salutation current of SC-pMOS is due to the p-doped poly gate depletion. SC-pMOS shows good DIBL(dram-induced harrier lowering) and sub-threshold characteristics, and there was no boron penetration.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.4
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• pp.24-31
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• 1995

In this paper, the dual-mode burst-error-correcting decoding algorithm is adapted to the multiple trellis-coded .pi./4 shift QPSK in order to achieve the improvement of bit error rate (BER) performance over fading channels. The dual-mode adaptive decoder which combines maximum likelihood decoding with a burst detection scheme usually operates as a Viterbi decoder and switches to time diversity error recovery whenever an uncorrectable error pattern is identified. Rayleigh fading channels and Rician fading channels having the Rician parameter K=5dB are used in computer simulation, and the simulation results are compared with those of interleaving techniques. It is shown that under the constraint of the fixed overall memory quantity, the dual-mode adaptive decoding scheme gains an advantage in the BER performance with respect to interleaving strategies.

• ETRI Journal
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• v.29 no.4
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• pp.457-462
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• 2007

This work presents a low-voltage static random access memory (SRAM) technique based on a dual-boosted cell array. For each read/write cycle, the wordline and cell power node of selected SRAM cells are boosted into two different voltage levels. This technique enhances the read static noise margin to a sufficient level without an increase in cell size. It also improves the SRAM circuit speed due to an increase in the cell read-out current. A 0.18 ${\mu}m$ CMOS 256-kbit SRAM macro is fabricated with the proposed technique, which demonstrates 0.8 V operation with 50 MHz while consuming 65 ${\mu}W$/MHz. It also demonstrates an 87% bit error rate reduction while operating with a 43% higher clock frequency compared with that of conventional SRAM.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.405-413
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• 2013

In this paper, a high-reliability differential paired 24-bit eFuse OTP memory with program-verify-read mode for PMICs is designed. In the proposed program-verify-read mode, the eFuse OTP memory can do a sensing margin test with a variable pull-up load in consideration of programmed eFuse resistance variation and can output a comparison result through a PFb (pass fail bar) pin by comparing a programmed datum with its read one. It is verified by simulation results that the sensing resistance is lower with $4k{\Omega}$ in case of the designed differential paired eFuse OTP memory than $50k{\Omega}$ in case of its dual-port eFuse OTP memory.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.10
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• pp.57-64
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• 2002

The structure of conventional CAM(Content Addressable Memory) cell, used to Look-up table scheme in Huffman CODEC, is not performed by being separated in reading, writing and match operation. So, there is disadvantages that the control is complicated, and the floating states of match line force wrong operation to be happened in reading, writing operation. In this paper, in order to improve the disadvantages and proces the data fast, fast Look-up table is designed using DBLCAM(Dual Bit Line CAM)-performing the reading, writing operation and match operation independently and Two-port SRAM being more fast than RAM in an access speed. Look-up table scheme in Huffman CODEC, using DBLCAM and Two-port SRAM proposed in this paper, is designed in Cadence tool, and layout is performed in 0.6${\mu}{\textrm}{m}$ 2-poly 3-metal CMOS full custom. And simulation is peformed with Hspice.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.5
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• pp.172-179
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• 1996

In the paper, QCELP (qualcomm code excited linear predictive), CDMA (code division multiple access)'s vocoder algorithm, was analyzed. And then, a ptich parameter seaarch architecture for 16-bit programmable DSP(digital signal processor) for QCELP was designed. Because we speed up the parameter search through high speed DSP using two MACs, we can satisfy speech codec specifiction for the digital celluar. Also, we implemented in FIFO(first-in first-out) memory using register file to increase the access time of data. This DSP was designed using COMPASS, ASIC design tool, by top-down design methodology. Therefore, it is possible to cope with rapid change at mobile communication market.