• Title/Summary/Keyword: SnO2

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Porous Sn-incorporated Ga2O3 nanowires synthesized by a combined process of powder sputtering and post thermal annealing (분말 스퍼터링과 후열처리 복합 공정으로 제조한 주석 함유 갈륨 산화물 다공성 나노와이어)

  • Lee, Haram;Kang, Hyon Chol
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.29 no.6
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    • pp.245-250
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    • 2019
  • We investigated the post-annealing effect of Sn-incorporated β-Ga2O3 (β-Ga2O3 : Sn) nanowires (NWs) grown on sapphire (0001) substrates using radio-frequency powder sputtering. The β-Ga2O3 : Sn NWs were converted to a porous structure during the vacuum annealing process at 800℃. Host non-stoichiometric Ga2O3-x, is transformed into stoichiometric Ga2O3, where Sn atoms separate and form Sn nano-clusters that gradually evaporate in a vacuum atmosphere. As a result, the amount of Sn atoms was reduced from 1.31 to 0.27 at%. Pores formed on the sides of β-Ga2O3 : Sn NWs were observed. This increases the ratio of the surface to the volume of β-Ga2O3 : Sn NWs.

Microstructure and Characteristics of Ag-SnO2-Bi2O3 Contact Materials by Powder Compaction (분말성형법으로 제조된 Ag-SnO2-Bi2O3 접점소재의 미세조직 및 특성)

  • Lee, Jin Kyu
    • Journal of Powder Materials
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    • v.29 no.1
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    • pp.41-46
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    • 2022
  • In this study, we report the microstructure and characteristics of Ag-SnO2-Bi2O3 contact materials using a controlled milling process with a subsequent compaction process. Using magnetic pulsed compaction (MPC), the milled Ag-SnO2-Bi2O3 powders have been consolidated into bulk samples. The effects of the compaction conditions on the microstructure and characteristics have been investigated in detail. The nanoscale SnO2 phase and microscale Bi2O3 phase are well-distributed homogeneously in the Ag matrix after the consolidation process. The successful consolidation of Ag-SnO2-Bi2O3 contact materials was achieved by an MPC process with subsequent atmospheric sintering, after which the hardness and electrical conductivity of the Ag-SnO2-Bi2O3 contact materials were found to be 62-75 HV and 52-63% IACS, respectively, which is related to the interfacial stability between the Ag matrix, the SnO2 phase, and the Bi2O3 phase.

Effect of O2/Ar+O2 concentration on phase stability of transparent Mn doped SnO2 monolayer film (혼합기체 O2/Ar+O2 농도 변화가 Mn 도핑된 SnO2 투명전도막의 상 안정성에 미치는 영향)

  • Kim, Taekeun;Jang, Guneik
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.31 no.4
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    • pp.154-158
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    • 2021
  • The optical transmittance of Mn-doped SnO2 monolayer film increased gradually from 80.9 to 85.4 % at 550 nm wavelengths upon increasing the O2/Ar+O2 concentration rate from 0 to 7.9 % and the band gap energy changed from 3.0 to 3.6 eV. The resistivity tended to decrease from 3.21 Ω·cm to 0.03 Ω·cm, reaching a minimum at 2.7 %, and then gradually increased from 0.03 to 52.0 Ω·cm at higher O2/Ar+O2 gas concentration ratio. Based on XPS spectra analysis, the Sn 3d5/2 peak of Mn-doped SnO2 single layer shifted slightly from 486.40 to 486.58 and O1s peak also shifted from 530.20 to 530.33 eV with increase the O2/Ar+O2 concentration ratio. Therefore, the XPS spectra results indicate that a multiphase with SnO and SnO2 coexisted in the sputtered Mn-doped SnO2 monolayer film.

Manufacturing and Electrochemical Characteristics of SnO2/Li4Ti5O12 for Lithium Ion Battery (리튬이차전지용 SnO2/Li4Ti5O12의 합성 및 전기화학적 특성)

  • Yang, A-Reum;Na, Byung-Ki
    • Clean Technology
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    • v.21 no.4
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    • pp.265-270
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    • 2015
  • In order to increase the capacity of the lithium ion battery, the capacity of the anode should be increased. SnO2 and Li4Ti5O12 were studied to replace the graphite as the anode materials. In this study, SnO2/Li4Ti5O12 composite materials were synthesized by solid-state method. The study reported here attempts to enhance the electrochemical capacity of Li4Ti5O12 through the incorporation of SnO2. Sn-based Li ion storage materials are loaded on Li4Ti5O12 surface. The SnO2/Li4Ti5O12 composite material has higher capacity than Li4Ti5O12, but the cycling capacity was decreased due to SnO2.

Determination of Ascorbic Acid, Acetaminophen, and Caffeine in Urine, Blood Serum by Electrochemical Sensor Based on ZnO-Zn2SnO4-SnO2 Nanocomposite and Graphene

  • Nikpanje, Elham;Bahmaei, Manochehr;Sharif, Amirabdolah Mehrdad
    • Journal of Electrochemical Science and Technology
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    • v.12 no.2
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    • pp.173-187
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    • 2021
  • In the present research, a simple electrochemical sensor based on a carbon paste electrode (CPE) modified with ZnO-Zn2SnO4-SnO2 and graphene (ZnO-Zn2SnO4-SnO2/Gr/CPE) was developed for the direct, simultaneous and individual electrochemical measurement of Acetaminophen (AC), Caffeine (Caf) and Ascorbic acid (AA). The synthesized nano-materials were investigated using scanning electron microscopy, X-ray Diffraction, Fourier-transform infrared spectroscopy, and electrochemical impedance spectroscopy techniques. Cyclic voltammetry and differential pulse voltammetry were applied for electrochemical investigation ZnO-Zn2SnO4-SnO2/Gr/CPE, and the impact of scan rate and the concentration of H+ on the electrode's responses were investigated. The voltammograms showed a linear relationship between the response of the electrode for individual oxidation of AA, AC and, Caf in the range of 0.021-120, 0.018-85.3, and 0.02-97.51 μM with the detection limit of 8.94, 6.66 and 7.09 nM (S/N = 3), respectively. Also, the amperometric technique was applied for the measuring of the target molecules in the range of 0.013-16, 0.008-12 and, 0.01-14 μM for AA, AC and, Caf with the detection limit of 6.28, 3.64 and 3.85 nM, respectively. Besides, the ZnO-Zn2SnO4-SnO2/Gr/CPE shows an excellent selectivity, stability, repeatability, and reproducibility for the determination of AA, AC and, Caf. Finally, the proposed sensor was successfully used to show the amount of AA, AC and, Caf in urine, blood serum samples with recoveries ranging between 95.8% and 104.06%.

A Comparison Study on Quantum Dots Light Emitting Diodes Using SnO2 and TiO2 Nanoparticles as Solution Processed Double Electron Transport Layers (용액공정 기반 SnO2와 TiO2를 이중 전자수송층으로 적용한 양자점 전계 발광소자의 특성비교 연구)

  • Shin, Seungchul;Kim, Suhyeon;Jang, Seunghun;Kim, Jiwan
    • Journal of the Microelectronics and Packaging Society
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    • v.27 no.3
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    • pp.69-72
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    • 2020
  • In this study, the inverted structured electroluminescence (EL) devices were fabricated with double electron transport layers (ETLs). The conduction band minimum (CBM) of TiO2 NPs is lower than SnO2 NPs. Therefore, it is expected that inserting TiO2 NPs between the SnO2 layer and the emission layer (EML) will reduce the energy barrier and transport electrons smoothly. The quantum dot light emitting diodes (QLEDs) with double ETLs showed the enhanced emission characteristics than those with only SnO2 layer.

Figure of Merit of SnO2/Ag/Nb2O5/SiO2/SnO2 Transparent Conducting Multilayer Film Deposited on Glass Substrate (Glass 위에 증착된 SnO2/Ag/Nb2O5/SiO2/SnO2 다층 투명전도막의 성능지수)

  • Kim, Jin-Gyun;Lee, Sang-Don;Jang, Gun-Eik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.2
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    • pp.81-85
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    • 2017
  • $SnO_2/Ag/Nb_2O_5/SiO_2/SnO_2$ multilayer films were prepared on glass substrate by sequential using RF/DC magnetron sputtering at room temperature. The influence of top $SnO_2$ layer thickness on optical and electrical properties of the multilayer films was investigated. Experimentally measured results exhibit transmittances over 84.3 ~ 85.8% at 550 nm wavelength. As the top $SnO_2$ layer thickness increased from 40 to 55 nm, the sheet resistance (Rs) increased from 5.81 to $6.94{\Omega}/sq$. The Haacke's figure of merit (FOM) calculated for the samples with various $SnO_2$ layer thicknesses was a maximum at 45 nm ($35.3{\times}10^{-3}{\Omega}^{-1}$).

Ag-functionalized SnO2 Nanowires Based Sensor for NO2 Detection at Low Operating Temperature (NO2 감응을 위한 Ag 금속입자가 기능화된 SnO2 나노선 기반 저온동작 센서)

  • Choi, Myung Sik;Kim, Min Young;Ahn, Jihye;Choi, Seung Joon;Lee, Kyu Hyoung
    • Journal of the Microelectronics and Packaging Society
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    • v.27 no.2
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    • pp.11-17
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    • 2020
  • In this study, Ag-functionalized SnO2 nanowires are presented for NO2 gas sensitive sensors at low temperatures (50℃). SnO2 nanowires were synthesized using vapor-liquid-solid method, and Ag metal particles were functionalized on the surface of SnO2 nanowires using flame chemical vapor deposition method. As a result of the sensing test about Ag-functionalized SnO2 nanowires based sensor, the response (Rg/Ra) to 10 ppm NO2 was 1.252 at 50℃. We believe that metal-functionalizing is a one of good way to increase the feasibility about semiconductor gas sensor.

Thermal Evaporation Syntheis and Luminescence Properties of SnO2 Nanocrystals using Mg as the Reducing Agent (Mg를 환원제로 사용하여 열증발법으로 합성한 SnO2 나노결정 및 발광 특성)

  • So, Ho-Jin;Lee, Geun-Hyoung
    • Korean Journal of Materials Research
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    • v.30 no.7
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    • pp.338-342
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    • 2020
  • Tin oxide (SnO2) nanocrystals are synthesized by a thermal evaporation method using a mixture of SnO2 and Mg powders. The synthesis process is performed in air at atmospheric pressure, which makes the process very simple. Nanocrystals with a belt shape start to form at 900 ℃ lower than the melting point of SnO2. As the synthesis temperature increases to 1,100 ℃, the quantity of nanocrystals increases. The size of the nanocrystals did not change with increasing temperature. When SnO2 powder without Mg powder is used as the source material, no nanocrystals are synthesized even at 1,100 ℃, indicating that Mg plays an important role in the formation of the SnO2 nanocrystals at temperatures as low as 900 ℃. X-ray diffraction analysis shows that the SnO2 nanocrystals have a rutile crystal structure. The belt-shaped SnO2 nanocrystals have a width of 300~800 nm, a thickness of 50 nm, and a length of several tens of micrometers. A strong blue emission peak centered at 410 nm is observed in the cathodoluminescence spectra of the belt-shaped SnO2 nanocrystals.

Figure of merit and bending characteristics of Mn-SnO2/Ag/Mn-SnO2 tri-layer film (Mn-SnO2/Ag/Mn-SnO2 3중 다층막의 성능지수와 밴딩 특성)

  • Cho, Youngsoo;Jang, Guneik
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.31 no.4
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    • pp.190-195
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    • 2021
  • Typical Mn-SnO2/Ag/Mn-SnO2 tri-layer films were prepared on a PET substrate by RF/DC magnetron sputtering method at room temperature. Based on EMP simulation, the thicknesses of the top and bottom Mn-doped SnO2 layers were kept at 40 nm and the Ag layer was maintained at 13 nm for continuous electrical conduction. The experimentally measured optical transmittances at 550 nm wavelength were ranged from 82.9 to 88.1 % and sheet resistances were varied from 5.9 to 6.9 Ω/☐. The highest value of figure of merit, ϕTC was 48.1 × 10-3 Ω-1. Based on bending test under 4 and 5 mm of inner and outer curvature radius condition, tri-layer film resistance varies only by approximately 1.5 % after 10,000 bending cycles, showing excellent mechanical flexibility.