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http://dx.doi.org/10.6111/JKCGCT.2021.31.4.154

Effect of O2/Ar+O2 concentration on phase stability of transparent Mn doped SnO2 monolayer film  

Kim, Taekeun (Department of Advanced Materials Engineering, Chungbuk National University)
Jang, Guneik (Department of Advanced Materials Engineering, Chungbuk National University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.31, no.4, 2021 , pp. 154-158 More about this Journal
Abstract
The optical transmittance of Mn-doped SnO2 monolayer film increased gradually from 80.9 to 85.4 % at 550 nm wavelengths upon increasing the O2/Ar+O2 concentration rate from 0 to 7.9 % and the band gap energy changed from 3.0 to 3.6 eV. The resistivity tended to decrease from 3.21 Ω·cm to 0.03 Ω·cm, reaching a minimum at 2.7 %, and then gradually increased from 0.03 to 52.0 Ω·cm at higher O2/Ar+O2 gas concentration ratio. Based on XPS spectra analysis, the Sn 3d5/2 peak of Mn-doped SnO2 single layer shifted slightly from 486.40 to 486.58 and O1s peak also shifted from 530.20 to 530.33 eV with increase the O2/Ar+O2 concentration ratio. Therefore, the XPS spectra results indicate that a multiphase with SnO and SnO2 coexisted in the sputtered Mn-doped SnO2 monolayer film.
Keywords
Mn-doped $SnO_2$; $O_2/Ar+O_2$; Carrier density; Energy band gap; Binding energy;
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