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http://dx.doi.org/10.6111/JKCGCT.2019.29.6.245

Porous Sn-incorporated Ga2O3 nanowires synthesized by a combined process of powder sputtering and post thermal annealing  

Lee, Haram (Department of Materials Science and Engineering, Chosun University)
Kang, Hyon Chol (Department of Materials Science and Engineering, Chosun University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.29, no.6, 2019 , pp. 245-250 More about this Journal
Abstract
We investigated the post-annealing effect of Sn-incorporated β-Ga2O3 (β-Ga2O3 : Sn) nanowires (NWs) grown on sapphire (0001) substrates using radio-frequency powder sputtering. The β-Ga2O3 : Sn NWs were converted to a porous structure during the vacuum annealing process at 800℃. Host non-stoichiometric Ga2O3-x, is transformed into stoichiometric Ga2O3, where Sn atoms separate and form Sn nano-clusters that gradually evaporate in a vacuum atmosphere. As a result, the amount of Sn atoms was reduced from 1.31 to 0.27 at%. Pores formed on the sides of β-Ga2O3 : Sn NWs were observed. This increases the ratio of the surface to the volume of β-Ga2O3 : Sn NWs.
Keywords
Sn-incorporated $Ga_2O_3$; Nanowires; Porous structure; Powder sputtering; Annealing;
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Times Cited By KSCI : 1  (Citation Analysis)
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