• Science of Emotion and Sensibility
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• v.12 no.2
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• pp.205-214
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• 2009

This paper addresses analyzing affective color data for emotional interior design. Both the physical and psychological patterns for spatial colors were tested on thirty subjects, of which fifteen were male. All subjects participated in both the physiological and psychological experiments. The data on the reflecting subjects' affective moods is gathered through EEG physical experiments and SD (Semantic Differential Scale) method surveys. This research has suggested the relation of both experiments through affective color response. The methods of SPSS 10.0 and TeleScan Version 2 are used for analyzing response data to coordinate the colour palette with changeable moods. From the analysis of statistical data, all of the visual stimuli related emotional keywords and physiological responses. Finally, the initial goal of this research is to construct an affective colour database that is tested through human color perception by physical and psychological experiments.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.33-39
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• 2006

An empirical nonlinear model with intrinsic nonlinear elements has been newly developed to predict the RF nonlinear characteristics of nano-scale bulk MOSFET accurately over the wide bias range. Using an extraction method suitable for nano-scale MOSFET, the bias-dependent data of intrinsic model parameters have been accurately obtained from measured S-parameters. The intrinsic nonlinear capacitance and drain current equations have been empirically obtained through 3-dimensional curve-fitting to their bias-dependent curves. The modeled S-parameters of 60nm MOSFET have good agreements with measured ones up to 20GHz in the wide bias range, verifying the accuracy of the nano-scale MOSFET model.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.7
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• pp.1-6
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• 2002

For an optimum device design of nano-scale SOI devices, this paper describes the short channel effects of multi-gate structures SOI MOSFETs such as double gate, triple gate and quadruple gate, as well as a new proposed Pi gate using computer simulation. The simulation has been performed with different channel doping concentrations, channel widths, silicon film thickness, and vertical gate extension depths of Pi gate. From the simulation results, it is found that Pi gate devices have a large margin in determination of doping concentrations, channel widths and film thickness comparing to double and triple gate devices because Pi gate devices offer a better short channel effects.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.6
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• pp.22-34
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• 2010

Existing image scalers generally adopt simple interpolation methods such as bilinear method to take cost-benefit, or highly complex architectures to achieve high quality resulting images. However, demands for a low power, low cost, and high performance image scaler become more important because of emerging high quality mobile contents. In this paper we propose the novel low power hardware architecture for a high quality raster scan image scaler. The proposed scaler architecture enhances the existing cubic interpolation look-up table architecture by reducing and optimizing memory access and hardware components. The input data buffer of existing image scaler is replaced with line memories to reduce the number of memory access that is critical to power consumption. The cubic interpolation formula used in existing look-up table architecture is also rearranged to reduce the number of the multipliers and look-up table size. Finally we analyze the optimized parameter sets of look-up table, which is a trade-off between quality of result image and hardware size.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.7 s.337
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• pp.5-12
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• 2005

The device performance of nano-scale center-channel (CC) double-gate (DG) MOSFET structure was investigated by numerically solving coupled Schr$\"{o}$dinger-Poisson and current continuity equations in a self-consistent manner. The CC operation and corresponding enhancement of current drive and transconductance of CC-NMOS are confirmed by comparing with the results of DG-NMOS which are performed under the condition of 10-80 nm gate length. Device optimization was theoretically performed in order to minimize the short-channel effects in terms of subthreshold swing, threshold voltage roll-off, and drain-induced barrier lowering. The simulation results indicate that DG-MOSFET structure including CC-NMOS is a promising candidates and quantum-mechanical modeling and simulation calculating the coupled Schr$\"{o}$dinger-Poisson and current continuity equations self-consistently are necessary for the application to sub-40 nm MOSFET technology.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.1-7
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• 2004

We performed two-dimensional (20) computer-based modeling and simulation of FinFET by solving the coupled Poisson-Schrodinger equations quantum-mechanically in a self-consistent manner. The simulation results are carefully investigated for FinFET with gate length(Lg) varying from 10 to 80nm and with a Si-fin thickness($T_{fin}$) varying from 10 to 40nm. Current-voltage (I-V) characteristics are compared with the experimental data. Device optimization has been performed in order to suppress the short-channel effects (SCEs) including the sub-threshold swing, threshold voltage roll-off, drain induced barrier lowering (DIBL). The quantum-mechanical simulation is compared with the classical appmach in order to understand the influence of the electron confinement effect. Simulation results indicated that the FinFET is a promising structure to suppress the SCEs and the quantum-mechanical simulation is essential for applying nano-scale device structure.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.4 s.346
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• pp.23-30
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• 2006

This paper describes the short-channel effect(SCE), corner effect of nano-scale MuGFETs(Multiple-Gate FETs) by three-dimensional simulation. We can extract the equivalent gate number of MuGFETs(Double-gate=2, Tri-gate=3, Pi-gate=3.14, Omega-gate=3.4, GAA=4) by threshold voltage model. Using the extracted gate number(n) we can calculate the natural length for each gate devices. We established a scaling theory for MuGFETs, which gives a optimization to avoid short channel effects for the device structure(silicon thickness, gate oxide thickness). It is observed that the comer effects decrease with the reduction of doping concentration and gate oxide thickness when the radius of curvature is larger than 17 % of the channel width.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.3
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• pp.43-53
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• 2003

Unlike in analog display devices, the physical screen resolution in digital devices are fixed from the manufacturing. It is a weak point on digital devices. The screen resolution displayed in digital display devices is varied. Thus, interpolation or decimation of the resolution on the display is needed to make the input pixels equal to the screen resolution., This process is called image scaling. Many researches have been developed to reduce the hardware cost and distortion of the image of image scaling algorithm. In this paper, we proposed a Winscale algorithm. which modifies the scale up/down in continuous domain to the scale up/down in discrete domain. Thus, the algorithm is suitable to digital display devices. Hardware implementation of the image scaler is performed using Verilog XL and chip is fabricated in a 0.5${\mu}{\textrm}{m}$ Samsung SOG technology. The hardware costs as well as the scalabilities are compared with the conventional image scaling algorithms that are used in other software. This Winscale algorithm is proved more scalable than other image-scaling algorithm, which has similar H/W cost. This image-scaling algorithm can be used in various digital display devices that need image scaling process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.8 s.338
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• pp.43-52
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• 2005

An prescaler which uses PLL(Phase Locked Loop) must satisfy high speed operation and low power consumption. Thus the performance or TSPC(True Single Phase Clocked) D-flip flops which is applied at Prescaler is very important. Power consumption of conventional TSPC D-flip flops was increased with glitches from output and unnecessary discharge at internal node in precharge phase. We proposed a new D-flip flop which reduced two clock transistors for precharge and discharge Phase. With inserting a new PMOS transistor to the input stage, we could prevent from unnecessary discharge in precharge phase. Moreover, to remove the glitch problems at output, we inserted an PMOS transistor in output stage. The proposed flip flop showed stable operations as well as low power consumption. The maximum frequency of prescaler by applying the proposed D-flip flop was 2.92GHz and achieved power consumption of 10.61mw at 3.3V. In comparison with prescaler applying the conventional TSPC D-flip $flop^[6]$, we obtained the performance improvement of $45.4\%$ in the view of PDP(Power-Belay-Product).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.25-31
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• 2004

In this paper, we introduce kinetic Monte Carlo (kMC) methods for simulating diffusion process in nano-scale device fabrication. At first, we review kMC theory and backgrounds and give a simple point defect diffusion process modeling in thermal annealing after ion (electron) implantation into Si crystalline substrate to help understand kinetic Monte Carlo methods. kMC is a kind of Monte Carlo but can simulate time evolution of diffusion process through Poisson probabilistic process. In kMC diffusion process, instead of. solving differential reaction-diffusion equations via conventional finite difference or element methods, it is based on a series of chemical reaction (between atoms and/or defects) or diffusion events according to event rates of all possible events. Every event has its own event rate and time evolution of semiconductor diffusion process is directly simulated. Those event rates can be derived either directly from molecular dynamics (MD) or first-principles (ab-initio) calculations, or from experimental data.