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Quantum-Mechanical Modeling and Simulation of Center-Channel Double-Gate MOSFET  

Kim, Ki-Dong (Department of Electrical Engineering, Inha Uniersity)
Won, Tae-Young (Department of Electrical Engineering, Inha University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.42, no.7, 2005 , pp. 5-12 More about this Journal
Abstract
The device performance of nano-scale center-channel (CC) double-gate (DG) MOSFET structure was investigated by numerically solving coupled Schr$\"{o}$dinger-Poisson and current continuity equations in a self-consistent manner. The CC operation and corresponding enhancement of current drive and transconductance of CC-NMOS are confirmed by comparing with the results of DG-NMOS which are performed under the condition of 10-80 nm gate length. Device optimization was theoretically performed in order to minimize the short-channel effects in terms of subthreshold swing, threshold voltage roll-off, and drain-induced barrier lowering. The simulation results indicate that DG-MOSFET structure including CC-NMOS is a promising candidates and quantum-mechanical modeling and simulation calculating the coupled Schr$\"{o}$dinger-Poisson and current continuity equations self-consistently are necessary for the application to sub-40 nm MOSFET technology.
Keywords
quantum-mechanical modeling and simulation; double-gate MOSFET; center-channel operation; short-channel effects; coupled Schrodinger-Poisson equation;
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