Browse > Article

New RF Empirical Nonlinear Modeling for Nano-Scale Bulk MOSFET  

Lee, Seong-Hearn (School of Electronics and Information Engineering, Hankuk University of Foreign Studies)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.43, no.12, 2006 , pp. 33-39 More about this Journal
Abstract
An empirical nonlinear model with intrinsic nonlinear elements has been newly developed to predict the RF nonlinear characteristics of nano-scale bulk MOSFET accurately over the wide bias range. Using an extraction method suitable for nano-scale MOSFET, the bias-dependent data of intrinsic model parameters have been accurately obtained from measured S-parameters. The intrinsic nonlinear capacitance and drain current equations have been empirically obtained through 3-dimensional curve-fitting to their bias-dependent curves. The modeled S-parameters of 60nm MOSFET have good agreements with measured ones up to 20GHz in the wide bias range, verifying the accuracy of the nano-scale MOSFET model.
Keywords
RF MOSFET; nano-scale MOSFET; bulk CMOS; modeling; parameter extraction;
Citations & Related Records
연도 인용수 순위
  • Reference
1 B. Yu et al.,'15 nm gate length planar CMOS transistor,' Tech. Dig. Int. Electron Devices Meet., pp. 937-939, Dec. 2001
2 BSIM3v3 Manual, Department of Electrical Engineering and Computer Science, University of California, Berkeley, 1995
3 BSIM4 Manual, Department of Electrical Engineering and Computer Science, University of California, Berkeley, 2000
4 R. van Langevelde and F. M. Klaassen, 'Accurate drain conductance modeling for distortion analysis in MOSFET,' Tech. Dig. Int. Electron Devices Meet., pp. 313-316, Dec. 1997   DOI
5 J. M. Collantes et al., 'A new large-signal model based on pulse measurement techniques for RF power MOSFET,' IEEE MTT-S Int. Microwave Symp, Dig., pp. 1553-1556, June 1995   DOI
6 I. Angelov, H. Zirath, and N. Rorsman, 'A new empirical model for HEMT and MESFET devices,' IEEE Trans. Microwave Theory Tech., vol. 40, pp. 2258-2268, Dec. 1992   DOI   ScienceOn
7 Y.-J. Chan, C.-H. Huang, C.-C. Weng, and B.-K. Liew, 'Characteristics of deep-submicrometer MOSFET and its empirical nonlinear RF model,' IEEE Transaction on Microwave Theory and Techniques, vol. 46, pp. 611-615, May 1998   DOI   ScienceOn
8 S. Lee, 'Empirical Nonlinear Modeling for RF MOSFETs,' International Journal of RF and Microwave Computer-Aided Engineering, vol. 14, pp. 182- 189, March 2004   DOI
9 http://www.tsmc.com/
10 http://www.umc.com
11 C.H. Chen et al., 'A 90 nm CMOS MS/RF based foundry SOC technology comprising superb 185 GHz $f_T$ RFMOS and versatile, high-Q passive components for cost/performance optimization,' Tech. Dig. Int. Electron Devices Meet., Dec. 2003   DOI
12 S.-F. Huang et al., 'High performance 50 nm CMOS devices for microprocessor and embedded processor core applications,' Tech. Dig. Int. Electron Devices Meet., Dec. 2001   DOI
13 S. Lee, 'Effects of pad interconnection parasitics on forword transit time in HBTs', IEEE Trans. Electron Devices, Vol 46, no 2, pp.275-278, Feb 1999   DOI   ScienceOn
14 S. Lee, 'An accurate RF Extraction Method for Resistances and Inductances of sub-0.1um CMOS Transistors', Electronics Letters, Vol 41, no 24, pp.1325-1327, Nov. 2005   DOI   ScienceOn
15 S. Lee, 'Direct extraction technique for a small-signal MOSFET equivalent circuit with substrate parameters,' Microwave and Optical Technology Lett., vol. 39, pp. 344-347, Nov. 2003   DOI   ScienceOn
16 Serenade version 8.7 User's Guide, Ansoft Corporation, 2001