• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 합동 추계학술대회 논문집 정보 및 제어부문
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• pp.348-351
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• 2001

In this paper, the Gm-C filter for low voltage and low power applications using a fully-differential transconductor is presented. The designed transconductor using the series composite transistors and the low voltage composite transistors has wide input range at low supply voltage. A negative resistor load (NRL) technology for high DC gain of the transconductor is employed with a common mode feedback(CMFB). As a design example, the third-order Elliptic lowpass filter is designed. The designed filter is simulated and examined by HSPICE using TSMC $0.35{\mu}m$ CMOS n-well parameters. The simulation results show 138kHz cutoff frequency and 11.05mW power dissipation with a 3.3V supply voltage.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.257-260
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• 2000

In this paper, a Gm-C filter for low voltage and low power applications using a fully-differential transconductor is presented. The designed transconductor using the series composite transistors and the low voltage composite transistors has wide input range at low supply voltage. A negative resistor load (NRL) technology for high DC gain of the transconductor is employed with a common mode feedback (CMFB). As a design example, the third-order Elliptic lowpass filter is designed. The designed filter is simulated and examined by HSPICE using 0.25${\mu}{\textrm}{m}$ CMOS n-well parameters. The simulation results show 105MHz cutoff frequency and 2.4㎽ power dissipation with a 2.5V supply voltage.

• Journal of Information Display
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• 제11권1호
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• pp.21-23
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• 2010

A new level shifter using low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) for low-power applications is proposed. The proposed level shifter uses a capacitive-coupling effect and can reduce the power consumption owing to its no-short-circuit current. Its power saving over the conventional level shifter is 72% for a 3.3 V input and a 10 V output.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.595-604
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• 2016

Utilizing a standard 130-nm CMOS process, a RF frontend is designed at 24 GHz for automotive collision avoidance radar application. Single IF direct conversion receiver (DCR) architecture is adopted to achieve high integration level and to alleviate the DCR problem. The proposed frontend is composed of a two-stage LNA and downconversion mixers. To save power consumption, and to enhance gain and linearity, stacked NMOS-PMOS $g_m$-boosting technique is employed in the design of LNA as the first stage. The switch transistors in the mixing stage are biased in subthreshold region to achieve low power consumption. The single balanced mixer is designed in PMOS transistors and is also realized based on the well-known folded architecture to increase voltage headroom. This frontend circuit features enhancement in gain, linearity, and power dissipation. The proposed circuit showed a maximum conversion gain of 19.6 dB and noise figure of 3 dB at the operation frequency. It also showed input and output return losses of less than -10 dB within bandwidth. Furthermore, the port-to-port isolation illustrated excellent characteristic between two ports. This frontend showed the third-order input intercept point (IIP3) of 3 dBm for the whole circuit with power dissipation of 6.5 mW from a 1.5 V supply.

• ETRI Journal
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• 제32권3호
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• pp.457-459
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• 2010

A low-power down-sampling mixer in a low-power digital 65 nm CMOS technology is presented. The mixer consumes only 830 ${\mu}W$ at 1.2 V supply voltage by combining an NMOS and a PMOS mixer with cascade transistors at the output. The measured gain is (19 ${\pm}$1 dB) at frequencies between 100 MHz and 3 GHz. An IIP3 of -5.9 dBm is achieved.

• 전자공학회논문지A
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• 제31A권6호
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• pp.128-133
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• 1994

This paper proposes a new TTL-to-CMOS converter which has low power dissipation. This converter has no static power dissipation for typical TTL output voltage levels. The simulatio result shows that the power dissipation is reduced to about 1/20 of conventional level converter using CMOS inverters. It also has hysteresis due to the positive feedback which makes the converter noise immune. The logic threshold voltages in the hysteresis characteristic can be optimized by changing the size ratios of the transistors.

• 전자공학회논문지
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• 제51권4호
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• pp.42-48
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• 2014

본 논문에서는, 트위스티드 연결구조를 이용한 새로운 저전압 스윙 도미노 로직 회로를 제안한다. 제안된 회로의 출력스윙 범위는 트위스티드 트랜지스터의 사이즈와 출력 캐패시턴스의 크기에 따라 조절가능하다. 제안된 회로를 적용한 리플캐리덧셈기(Ripple Carry Adder)는 도미노 CMOS로직에 비해 전력소비는 37%감소했고 전력 지연 곱(power-delay product)은 43%감소했다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -2
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• pp.1312-1315
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• 2002

This research describes the design of a fully integrated fractional-N frequency synthesizer intended for the local oscillator in IMT-2000 system using 0.18-$\mu\textrm{m}$ CMOS technology and 1.8-V single power supply. The designed fractional-N synthesizer contains following components. Modified charge pump uses active cascode transistors to achieve the high output impedance. A multi-modulus prescaler has modified ECL-like D flip-flop with additional diode-connected transistors for short transient time and high frequency operation. And phase-frequency detector, integrated passive loop filter, LC-tuned VCO having a tuning range from 1.584 to 2.4 ㎓ at 1.8-V power supply, and higher-order sigma-delta modulator are contained. Finally, designed frequency synthesizer provides 5 ㎒ channel spacing with -122.6 dBc/Hz at 1 ㎒ in the WCDMA band and total output power is 28 mW.

• 한국컴퓨터정보학회:학술대회논문집
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• 한국컴퓨터정보학회 2014년도 제49차 동계학술대회논문집 22권1호
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• pp.9-13
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• 2014

The performance of large scale software applications has been automatically increasing for last few decades under the influence of Moore's law - the number of transistors on a microprocessor roughly doubled every eighteen months. However, on-chip transistors limitations and heating issues led to the emergence of multicore processors. The energy efficient ARM based System-on-Chip (SoC) processors are being considered for future high performance computing systems. In this paper, we present a case study of two widely used parallel programming models i.e. MPI and MapReduce on distributed memory cluster of ARM SoC development boards. The case study application, Black-Scholes option pricing equation, was parallelized and evaluated in terms of power consumption and throughput. The results show that the Hadoop implementation has low instantaneous power consumption that of MPI, but MPI outperforms Hadoop implementation by a factor of 1.46 in terms of total power consumption to execution time ratio.

• 대한전자공학회논문지SD
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• 제47권3호
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• pp.7-17
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• 2010

본 논문은 4-트랜지스터 래치 셀을 이용한 저전력향 신개념의 SRAM을 제안한다. 4-트랜지스터 메모리 셀은 종래의 6-트랜지스터 SRAM 셀에서 access 트랜지스터를 제거한 형태로, PMOS 트랜지스터의 소스는 비트라인 쌍에 연결되고 NMOS 트랜지스터의 소스는 두개의 워드라인에 각각 연결된다. 동작시 워드라인에 일정크기의 전압을 인가할 때 비트라인에 흐르는 전류를 감지하여 읽기동작을 수행하고, 비트라인 쌍에 전압차이를 두고 워드라인에 일정크기의 전압을 인가하여 쓰기동작을 수행한다. 이는 공급전압 보다 낮은 소신호 전압으로 워드라인과 비트라인을 구동하여 메모리 셀의 데이터를 저장하고 읽어낼 수 있어서 동작 소비전력이 적다. 아울러 셀 누셀전류 경로의 감소로 인해 대기 소모전력 또한 개선되는 장점이 있다. 0.18-${\mu}m$ CMOS 공정으로 1.8-V, 16-kbit SRAM test chip을 제작하여 제안한 회로기술을 검증하였고, 칩 면적은 $0.2156\;mm^2$이며 access 속도는 17.5 ns 이다. 동일한 환경에서 구현한 종래의 6-트랜지스터 SRAM과 비교하여 읽기동작시 30% 쓰기동작시 42% 동작소비전력이 적고, 대기전력 또한 64% 적게 소비함을 관찰하였다.