Low-temperature polycrystalline silicon level shifter using capacitive coupling for low-power operation

  • Chung, Hoon-Ju (School of Electrical Engineering, Kumoh ational Institute of Technology) ;
  • Sin, Yong-Won (School of Electrical Engineering, Kumoh National Institute of Technology) ;
  • Cho, Bong-Rae (AP2 Process Integration Team, LG Display)
  • Received : 2010.01.29
  • Accepted : 2010.03.04
  • Published : 2010.03.31

Abstract

A new level shifter using low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) for low-power applications is proposed. The proposed level shifter uses a capacitive-coupling effect and can reduce the power consumption owing to its no-short-circuit current. Its power saving over the conventional level shifter is 72% for a 3.3 V input and a 10 V output.

Keywords

References

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