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Low-temperature polycrystalline silicon level shifter using capacitive coupling for low-power operation  

Chung, Hoon-Ju (School of Electrical Engineering, Kumoh ational Institute of Technology)
Sin, Yong-Won (School of Electrical Engineering, Kumoh National Institute of Technology)
Cho, Bong-Rae (AP2 Process Integration Team, LG Display)
Publication Information
Journal of Information Display / v.11, no.1, 2010 , pp. 21-23 More about this Journal
Abstract
A new level shifter using low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) for low-power applications is proposed. The proposed level shifter uses a capacitive-coupling effect and can reduce the power consumption owing to its no-short-circuit current. Its power saving over the conventional level shifter is 72% for a 3.3 V input and a 10 V output.
Keywords
low power; level shifter; capacitive coupling;
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