JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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An Integrated High Linearity CMOS Receiver Frontend for 24-GHz Applications

  • Rastegar, Habib (Department of Information and Communications Engineering, Pukyong National University) ;
  • Ryu, Jee-Youl (Department of Information and Communications Engineering, Pukyong National University)
  • Received : 2016.01.05
  • Accepted : 2016.06.14
  • Published : 2016.10.30
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Abstract

Utilizing a standard 130-nm CMOS process, a RF frontend is designed at 24 GHz for automotive collision avoidance radar application. Single IF direct conversion receiver (DCR) architecture is adopted to achieve high integration level and to alleviate the DCR problem. The proposed frontend is composed of a two-stage LNA and downconversion mixers. To save power consumption, and to enhance gain and linearity, stacked NMOS-PMOS $g_m$-boosting technique is employed in the design of LNA as the first stage. The switch transistors in the mixing stage are biased in subthreshold region to achieve low power consumption. The single balanced mixer is designed in PMOS transistors and is also realized based on the well-known folded architecture to increase voltage headroom. This frontend circuit features enhancement in gain, linearity, and power dissipation. The proposed circuit showed a maximum conversion gain of 19.6 dB and noise figure of 3 dB at the operation frequency. It also showed input and output return losses of less than -10 dB within bandwidth. Furthermore, the port-to-port isolation illustrated excellent characteristic between two ports. This frontend showed the third-order input intercept point (IIP3) of 3 dBm for the whole circuit with power dissipation of 6.5 mW from a 1.5 V supply.

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References

  1. H. Rastegar and J.-Y. Ryu, "A broadband Low Noise Amplifier with built-in linearizer in 0.13-${\mu}m$ CMOS process," Microelectronics Journal, Vol.46, No.8, pp. 698-705, August 2015. https://doi.org/10.1016/j.mejo.2015.05.006
  2. W.-C. Choi and J.-Y. Ryu, "A Programmable Compensation Circuit for System-on-Chip Application," Journal of Semiconductor Technology and Science, Vol. 11, No. 3, pp. 198-206, September 2011. https://doi.org/10.5573/JSTS.2011.11.3.198
  3. J. Rudell. "A 1.9 GHz wide-band IF double conversion MOS receiver for cordless telephone application," IEEE J. Solid-State Circuits, Vol.32, No.12, pp.2071-88, Dec. 1997. https://doi.org/10.1109/4.643665
  4. Andre Mariano, Bernardo Leite, Thierry Taris, Jean Baptiste Begueret, "Co-design of a wideband double balanced active mixer and transformer-based baluns for 77 GHz radar applications," Microelectron. J., Dec. 2014.
  5. Y. Chen, H. Hsieh, and L. Lu, "A 24-GHz Receiver Frontend With an LO Signal Generator in 0.18-${\mu}m$," CMOS, IEEE Trans. on Microw. Theory and Tech., Vol.56 No.5, pp.1043-1051, May 2008. https://doi.org/10.1109/TMTT.2008.920154
  6. X. Guan, and A. Hajimiri, "A 24-GHz CMOS Front-End," IEEE J. of Solid-State Circuits, Vol.39No.2, pp.368-373, Feb. 2004. https://doi.org/10.1109/JSSC.2003.821783
  7. X. Guan, H. Hashemi, and A. Hajimiri, "A Fully Integrated 24-GHz Eight-Element Phased-Array Receiver in Silicon," IEEE J. of Solid-State Circuits, Vol.39 No.12, pp.2311-2320, Dec. 2004. https://doi.org/10.1109/JSSC.2004.836339
  8. B. Razavi, "Architectures and circuits for RF CMOS Receivers," Proceeding of custom integrated circuits conference, pp.393-400, 1998.
  9. H. Rashtian, and S. Mirabbasi, "Applications of Body Biasing in Multistage CMOS Low-Noise Amplifiers," IEEE Trans. Circuits Syst. I: Regular Papers, Vol.61 No.6, pp.1638-1674, Jun. 2014. https://doi.org/10.1109/TCSI.2013.2290848
  10. A. Slimane, M. Trabelsi, and M. T. Belaroussi, "A 0.9-V, 7-mW UWB LNA for 3.1-10.6 GHz wireless applications in 0.18-mm CMOS technology," Microelectron. J. Vol.42 No.11, pp.1263-1268, Aug. 2011. https://doi.org/10.1016/j.mejo.2011.08.008
  11. H. Rastegar, S. Saryazdi, and A. Hakimi, "A low power and high linearity UWB low noise amplifier (LNA) for 3.1-10.6 GHz wireless applications in 0.13${\mu}m$ CMOS process," Microelectron. J., Vol.44, No.3, pp.201-209, Feb. 2013. https://doi.org/10.1016/j.mejo.2013.01.004
  12. S. Ganesan, E. Sanchez-Sinencio, J. Silva-Martinez, "A Highly Linear Low-Noise Amplifier," IEEE Trans. on Microw. Theory and Tech., Vol.54 No.12, pp.4079-4085, Dec. 2006. https://doi.org/10.1109/TMTT.2006.885889
  13. M. Parvizi and A. Nabavi, "Low-power highly linear UWB CMOS mixer with simultaneous second-and third-order distortion cancellation," Microelectron. J., Vol.41 No.1, pp.1-8, 2010. https://doi.org/10.1016/j.mejo.2009.10.005
  14. M. Harada, T. Tsukahara, and J. Yamada, "0.5-1 V 2GHz RF front-end circuits in CMOS/SIMOX," IEEE ISSCC Dig. Tech. pp. 378-379, 2000.
  15. Y. Ding and R. Harjani, "High-Linearity CMOS RF Front-End Circuits," New York: Springer-Verlag, 2005.
  16. A. C. Heiberg, T. W. Brown, T. S. Fiez and Kartikeya Mayaram, A 250 mV, 352 ${\mu}W$ GPS Receiver RF Front-End in 130nm CMOS, IEEE J. of solid-state circuits, Vol.46 No.4, pp. 938-949, Apr. 2011. https://doi.org/10.1109/JSSC.2011.2109470
  17. H. Lee and S. Mohammadi, "A 500${\mu}W$ 2.4GHz CMOS Subthreshold Mixer for Ultra Low Power Applications," IEEE Radio Frequency Integrated Circuits Symposium, pp.325-328, Jun. 2007.
  18. S. Tedja, J. V. der Spiegel, and H. Williams, "Analytical and experimental studies of thermal noise in MOSFETs," IEEE Trans. Electron Devices, Vol.41, No.11, pp.2069-2075, Nov. 1994. https://doi.org/10.1109/16.333824
  19. J. Suganthi, N. Kumaresan, K. Anbarasi, "Design of power efficient divide by 2/3 counter using E-TSPC based flip flops," International J. of Innovative Technology and Exploring Engineering, Vol.1, No.2 pp.158-161, July 2012.
  20. M. Shoji, "FET scaling in domino CMOS gates, IEEE J. of solid-state circuits," Vol. 20 No.5, pp.1067-1071, Oct. 1985. https://doi.org/10.1109/JSSC.1985.1052438
  21. D.Y. Kim, S.-G. Lee and J.-H. Lee, "Up-Conversion Mixer for PCS Application Using Si BJT, IEEE 2nd Int'l Conf. on Microwave and Millimeter Wave Technology Proc.pp. 424-427, Sep.2000.
  22. L. Wang, S. Glisic, J. Borngraeber, W. Winkler and J. C. Scheytt, "A Single-Ended Fully Integrated SiGe 77/79 GHz Receiver for Automotive Radar," IEEE J. of solidstate circuits, Vol.43 No.9, pp.1897-1908, Sep. 2008.