• Journal of Astronomy and Space Sciences
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• v.15 no.1
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• pp.209-220
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• 1998

The stability problem of steady motion of a rigid body with multi-elastic appendages and multi-liquid-filled cavities, in the presence of no external forces or torque, is considered in this paper. The flexible appendages are modeled as the clamped -free-free-free rectangular plates, or/and as the discrete mass- spring sub-system. The motion of liquid in every single ellipsoidal cavity is modeled as the uniform vortex motion with a finite number of degrees of freedom. Assuming that stationary holonomic constraints imposed on the body allow its rotation about a spatially fixed axis, the equation of motion for such a systematic configuration can be very complex. It consists of a set of ordinary differential equations for the motion of the rigid body, the uniform rotation of the contained liquids, the motion of discrete elastic parts, and a set of partial differential equations for the elastic appendages supplemented by appropriate initial and boundary conditions. In addition, for such a hybrid system, under suitable assumptions, their equations of motion have four types of first integrals, i.e., energy and area, Helmholtz' constancy of liquid - vortexes, and the constant of the Poisson equation of motion. Chetaev's effective method for constructing Liapunov functions in the form of a set of first integrals of the equations of the perturbed motion is employed to investigate the sufficient stability conditions of steady motions of the complete system in the sense of Liapunov, i.e., with respect to the variables determining the motion of the solid body and to some quantities which define integrally the motion of flexible appendages. These sufficient conditions take into account the vortexes of the contained liquids, the vibration of the flexible components, and coupling among the liquid-elasticity solid.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.12
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• pp.2939-2945
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• 2014

This paper has analyzed the change of threshold voltage for oxide structure of symmetric and asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET can be fabricated with different top and bottom gate oxide thickness, while the symmetric DGMOSFET has the same top and bottom gate oxide thickness. Therefore optimum threshold voltage is considered for top and bottom gate oxide thickness of asymmetric DGMOSFET, compared with the threshold voltage of symmetric DGMOSFET. To obtain the threshold voltage, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. We investigate for bottom gate voltage, channel length and thickness, and doping concentration how top and bottom gate oxide thickness influences on threshold voltage using this threshold voltage model. As a result, threshold voltage is greatly changed for oxide thickness, and we know the changing trend greatly differs with bottom gate voltage, channel length and thickness, and doping concentration.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.9
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• pp.2183-2188
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• 2014

This paper has analyzed threshold voltage movement for channel doping concentration of asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET is generally fabricated with low doping channel and fully depleted under operation. Since impurity scattering is lessened, asymmetric DGMOSFET has the adventage that high speed operation is possible. The threshold voltage movement, one of short channel effects necessarily occurred in fine devices, is investigated for the change of channel doping concentration in asymmetric DGMOSFET. The analytical potential distribution of series form is derived from Possion's equation to obtain threshold voltage. The movement of threshold voltage is investigated for channel doping concentration with parameters of channel length, channel thickness, oxide thickness, and doping profiles. As a result, threshold voltage increases with increase of doping concentration, and that decreases with decrease of channel length. Threshold voltage increases with decrease of channel thickness and bottom gate voltage. Lastly threshold voltage increases with decrease of oxide thickness.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.156-162
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• 2015

This paper has analyzed how conduction path and electron concentration for the device parameters such as oxide thickness, channel doping, and top and bottom gate voltage influence on subthreshold swing of asymmetric double gate MOSFET. Compared with symmetric and asymmetric double gate MOSFET, asymmetric double gate MOSFET has the advantage that the factors to be able to control the short channel effects increase since top and bottom gate oxide thickness and voltages can be set differently. Therefore the conduction path and electron concentration for top and bottom gate oxide thickness and voltages are investigated, and it is found the optimum conditions that the degradation of subthreshold swing, severe short channel effects, can reduce. To obtain the analytical subthreshold swing, the analytical potential distribution is derived from Possion's equation. As a result, conduction path and electron concentration are greatly changed for device parameters, and subthreshold swing is influenced by conduction path and electron concentration of top and bottom.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.8
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• pp.1925-1930
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• 2014

This paper has analyzed the relation of conduction path and subthreshold swing for doping profile in channel of asymmetric double gate(DG) MOSFET. Since the channel size of asymmetric DGMOSFET is greatly small and number of impurity is few, the high doping channel is analyzed. The analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. The conduction path and subthreshold swing are derived from this analytical potential distribution, and those are investigated for variables of doping profile, projected range and standard projected deviation, according to the change of channel length and thickness. As a result, subthreshold swing is reduced when conduction path is approaching to top gate, and that is increased with a decrease of channel length and a increase of channel thickness due to short channel effects.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.2
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• pp.401-406
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• 2015

The change of subthreshold swing for channel length of asymmetric double gate(DG) MOSFET has been analyzed. The subthreshold swing is the important factor to determine digital chracteristics of transistor and is degraded with reduction of channel. The subthreshold swing for channel length of the DGMOSFET developed to solve this problem is investigated for channel thickness, oxide thickness, top and bottom gate voltage and doping concentration. Especially the subthreshold swing for asymmetric DGMOSFET to be able to be fabricated with different top and bottom gate structure is investigated in detail for bottom gate voltage and bottom oxide thickness. To obtain the analytical subthreshold swing, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. As a result, subthreshold swing is sensitively changed according to top and bottom gate voltage, channel doping concentration and channel dimension.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.6
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• pp.79-84
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• 2015

In a distribution of digital image, there is a serious problem that is a distribution of the altered image by a forger. For the problem solution, this paper proposes a median filtering (MF) image forensic decision algorithm using a feature vector according to the pixel value's gradients. In the proposed algorithm, AR (Autoregressive) coefficients are computed from pixel value' gradients of original image then 1th~6th order coefficients to be six feature vector. And the reconstructed image is produced by the solution of Poisson's equation with the gradients. From the difference image between original and its reconstructed image, four feature vector (Average value, Max. value and the coordinate i,j of Max. value) is extracted. Subsequently, Two kinds of the feature vector combined to 10 Dim. feature vector that is used in the learning of a SVM (Support Vector Machine) classification for MF (Median Filtering) detector of the altered image. On the proposed algorithm of the median filtering detection, compare to MFR (Median Filter Residual) scheme that had the same 10 Dim. feature vectors, the performance is excellent at Unaltered, Averaging filtering ($3{\times}3$) and JPEG (QF=90) images, and less at Gaussian filtering ($3{\times}3$) image. However, in the measured performances of all items, AUC (Area Under Curve) by the sensitivity and 1-specificity is approached to 1. Thus, it is confirmed that the grade evaluation of the proposed algorithm is 'Excellent (A)'.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.367-380
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• 2013

In this paper, an analytical threshold voltage model is developed for a short-channel double-material-gate (DMG) strained-silicon (s-Si) on silicon-germanium ($Si_{1-X}Ge_X$) MOSFET structure. The proposed threshold voltage model is based on the so called virtual-cathode potential formulation. The virtual-cathode potential is taken as minimum channel potential along the transverse direction of the channel and is derived from two-dimensional (2D) potential distribution of channel region. The 2D channel potential is formulated by solving the 2D Poisson's equation with suitable boundary conditions in both the strained-Si layer and relaxed $Si_{1-X}Ge_X$ layer. The effects of a number of device parameters like the Ge mole fraction, Si film thickness and gate-length ratio have been considered on threshold voltage. Further, the drain induced barrier lowering (DIBL) has also been analyzed for gate-length ratio and amount of strain variations. The validity of the present 2D analytical model is verified with ATLAS$^{TM}$, a 2D device simulator from Silvaco Inc.

• Journal of the Korean earth science society
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• v.28 no.7
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• pp.936-946
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• 2007

Analytical geopotential field in balance with the sectoral mode (the first symmetric mode with respect to the equator) of the Rossby-Haurwitz wave on the inclined rotation axis was derived in presence of superrotation background flow. The balanced field was obtained by inverting the divergence equation with the time derivative being zero. The inversion consists of two steps, i.e., the evaluation of nonlinear forcing terms and the finding of analytical solutions based on the Poisson's equation. In the second step, the forcing terms in the from of Legendre function were readily inverted due to the fact that Legendre function is the eigenfunction of the spherical Laplacian operator, while other terms were solved either by introducing a trial function or by integrating the Legendre equation. The balanced field was found to be expressed with six zonal wavenumber components, and shown to be of asymmetric structure about the equator. In association with asymmetricity, the advantageous point of the balanced field as a validation method for the numerical model was addressed. In special cases where the strength of the background flow is a half of or exactly the same as the rotation rate of the Earth it was revealed that one of the zonal wavenumber components vanishes. The analytical balanced field was compared with the geopotential field which was obtained using a spherical harmonics spectral model. It was found that the normalized difference lied in the order of machine rounding, indicating the reliability of the analytical results. The stability of the sectoral mode of Rossby-Haurwitz wave and the associated balanced field was discussed, comparing with the flrst antisymmetric mode.

• Advances in nano research
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• v.10 no.2
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• pp.151-163
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• 2021

The main target of this study is to investigate nonlinear transient responses of moving polymer nano-size plates fortified by means of Graphene Platelets (GPLs) and resting on a Winkler-Pasternak foundation under a transverse pressure force and a temperature variation. Two graphene spreading forms dispersed through the plate thickness are studied, and the Halpin-Tsai micro-mechanics model is used to obtain the effective Young's modulus. Furthermore, the rule of mixture is employed to calculate the effective mass density and Poisson's ratio. In accordance with the first order shear deformation and von Karman theory for nonlinear systems, the kinematic equations are derived, and then nonlocal strain gradient scheme is used to reflect the effects of nonlocal and strain gradient parameters on small-size objects. Afterwards, a combined approach, kinetic dynamic relaxation method accompanied by Newmark technique, is hired for solving the time-varying equation sets, and Fortran program is developed to generate the numerical results. The accuracy of the current model is verified by comparative studies with available results in the literature. Finally, a parametric study is carried out to explore the effects of GPL's weight fractions and dispersion patterns, edge conditions, softening and hardening factors, the temperature change, the velocity of moving nanoplate and elastic foundation stiffness on the dynamic response of the structure. The result illustrates that the effects of nonlocality and strain gradient parameters are more remarkable in the higher magnitudes of the nanoplate speed.