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http://dx.doi.org/10.6109/jkiice.2015.19.2.401

Analysis of Subthreshold Swing for Channel Length of Asymmetric Double Gate MOSFET  

Jung, Hakkee (Department of Electronic Engineering, Kunsan National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.19, no.2, 2015 , pp. 401-406 More about this Journal
Abstract
The change of subthreshold swing for channel length of asymmetric double gate(DG) MOSFET has been analyzed. The subthreshold swing is the important factor to determine digital chracteristics of transistor and is degraded with reduction of channel. The subthreshold swing for channel length of the DGMOSFET developed to solve this problem is investigated for channel thickness, oxide thickness, top and bottom gate voltage and doping concentration. Especially the subthreshold swing for asymmetric DGMOSFET to be able to be fabricated with different top and bottom gate structure is investigated in detail for bottom gate voltage and bottom oxide thickness. To obtain the analytical subthreshold swing, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. As a result, subthreshold swing is sensitively changed according to top and bottom gate voltage, channel doping concentration and channel dimension.
Keywords
asymmetric double gate; threshold voltage; Poisson equation; channel length;
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Times Cited By KSCI : 1  (Citation Analysis)
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