An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Silicon (s-Si) Channel on Silicon-Germanium (SiGe) Substrates |
Bhushan, Shiv
(Department of Electronics and Communication Engineering, Nation al Institute of Technology)
Sarangi, Santunu (Department of Electronics and Communication Engineering, Nation al Institute of Technology) Gopi, Krishna Saramekala (Department of Electronics and Communication Engineering, Nation al Institute of Technology) Santra, Abirmoya (Department of Electronics and Communication Engineering, Nation al Institute of Technology) Dubey, Sarvesh (Department of Electronics Engineering, IIT(BHU)) Tiwari, Pramod Kumar (Department of Electronics and Communication Engineering, Nation al Institute of Technology) |
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