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http://dx.doi.org/10.6109/jkiice.2014.18.12.2939

Analysis of Threshold Voltage for Symmetric and Asymmetric Oxide Structure of Double Gate MOSFET  

Jung, Hakkee (Department of Electronic Engineering, Kunsan National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.18, no.12, 2014 , pp. 2939-2945 More about this Journal
Abstract
This paper has analyzed the change of threshold voltage for oxide structure of symmetric and asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET can be fabricated with different top and bottom gate oxide thickness, while the symmetric DGMOSFET has the same top and bottom gate oxide thickness. Therefore optimum threshold voltage is considered for top and bottom gate oxide thickness of asymmetric DGMOSFET, compared with the threshold voltage of symmetric DGMOSFET. To obtain the threshold voltage, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. We investigate for bottom gate voltage, channel length and thickness, and doping concentration how top and bottom gate oxide thickness influences on threshold voltage using this threshold voltage model. As a result, threshold voltage is greatly changed for oxide thickness, and we know the changing trend greatly differs with bottom gate voltage, channel length and thickness, and doping concentration.
Keywords
symmetric double gate; asymmetric double gate; threshold voltage; Poisson equation;
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Times Cited By KSCI : 1  (Citation Analysis)
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