• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.185-196
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• 2002

MRAM(magnetic random access memory) is a promising candidate for a universal memory with non-volatile, fast operation speed and low power consumption. The simplest architecture of MRAM cell is a combination of MTJ(magnetic tunnel junction) as a data storage part and MOS transistor as a data selection part. This article will review the general development status of MRAM and discuss the issues. The key issues of MRAM technology as a future memory candidate are resistance control and low current operation for small enough device size. Switching issues are controllable with a choice of appropriate shape and fine patterning process. The control of fabrication is rather important to realize an actual memory device for MRAM technology.

• Journal of the Korean Magnetics Society
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• v.18 no.3
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• pp.103-108
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• 2008

Magnetoresistive random access memory (MRAM) don't get very public face on the field of non-volatile memory. Because recording capacity of MRAM is smaller than other non-volatile memory and structurally, magnetic efficiency of MRAM is very bad. We diminish a size of one cell in order to make MRAM of high recording capacity. But It don't make high recording field in general structures consisting of two current wire. Accordingly, We make a cell of small size is impossible. In this paper, we suggest new MRAM that it have two pole of high permeability on both ends of recording layer. Because magnetic efficiency of new MRAM is higher than exiting MRAM, it can make high recording field. And we can diminish the size of one cell due to recording layer of high coercivity. We used three-dimension finite element method to prove the reliability.

• Journal of the Korea Society of Computer and Information
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• v.25 no.3
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• pp.1-9
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• 2020

In this paper, we propose an efficient adaptive write scheme that improves the performance of write operation in MLC STT-MRAM caches. The key idea of the proposed scheme is to perform the write operation fast if the target MLC STT-MRAM cells contain a dead block. Even if the fast write operation on the MLC STT-MRAM evicts a cache block from the MLC STT-MRAM cells, its performance impact is low if the evicted block is a dead block which is not used in the future. Through experimental evaluation with a memory simulator, we show that the proposed adaptive write scheme improves the performance of the MLC STT-MRAM caches by 17% on average.

• Journal of the Korean Magnetics Society
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• v.19 no.1
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• pp.35-42
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• 2009

Among the next generation memory, MRAM (Magnetic Random Access Memory) is worthy of notice for substituting the preexisting memory thanks to its non-volatile property and other advantages. Recently perpendicular MRAM and spin transfer torque MRAM techniques are under active investigation to realize a high density and low power consumption. As a result, there are increasing of patents applications for high density, low current density for magnetization switching and high thermal stability. In this paper, we analyze the trend of patent applications and registrations about MRAM and propose a direction of future investigation.

• Journal of Magnetics
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• v.7 no.3
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• pp.101-105
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• 2002

MRAM (Magnetoresistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. This paper is for testing the actual electrical parameters to adopt MRAM technology in the semiconductor based memory device. The discussed topics are an actual integration of MRAM core cell and its properties such as electrical tuning of MOS/MTJ for data sensing and control of magnetic switching for data writing. It will be also tested that limits of the MRAM technology for a high density memory.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.525-526
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• 2006

A macro model for Savtchenko switching mode MRAM (toggling MRAM) cells which can be utilized to develop the core architecture and the peripheral circuitry is proposed, and a writing scheme suitable to the toggling characteristic is developed. The sensing and writing operations of the toggling MRAM adopting the macro model are verified by Spectre simulations.

• Proceedings of the Korea Information Processing Society Conference
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• 2013.05a
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• pp.93-96
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• 2013

모바일 환경에서 전력 손실이 중요한 문제 중 하나가 됨에 따라, MRAM과 플래시메모리와 같은 비 휘발성 메모리가 차세대 모바일 컴퓨터에 널리 사용될 것이다. 본 논문에서는 DRAM/MRAM 하이브리드 메인 메모리의 제한적인 쓰기 연산 성능을 고려한 효율적인 버퍼 캐시 기법을 연구했다. 제안한 기법은 MRAM 의 제한적인 쓰기 연산 성능을 고려하고 플래시 메모리 저장 장치의 삭제 연산 횟수를 최소화한다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.197-204
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• 2002

DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.

• Journal of the Korean Magnetics Society
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• v.19 no.1
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• pp.22-27
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• 2009

Reduction of the critical current density ($J_c$) for STT magnetization switching is most important issue of magnetic tunnel junctions (MTJs) based MRAM. This report describes how to decrease the Jc and will introduce the recent research progresses of STT-MRAM devices with material engineering and structural improvement, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.8
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• pp.1-10
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• 2008

In this paper, we describe a design of a 128bit MRAM based on a new switching architecture which is Local Field Switching(LFS). LFS uses a local magnetic field generated by the current flowing through an MTJ. This mode reduces the writing current since small current can induce large magnetic field because of close distance between MTJ and the current. It also improves the cell selectivity over using conventional MTJ architecture because it doesn't need a digit line for writing. The MRAM has 1-Transistor 1-Magnetic Tunnel Junction (IT-1MTJ) memory cell structure and uses a bidirectional write driver, a mid-point reference cell block and a current mode sense amplifier. CMOS emulation cell is adopted as an LFS-MTJ cell to verify the operation of the circuit without the MTJ process. The memory circuit is fabricated using a $0.18{\mu}m$ CMOS technology with six layers o) metal and tested on custom board.