Journal of the Korean Magnetics Society (한국자기학회지)

The Korean Magnetics Society (한국자기학회)
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Technology Trend of Spin-Transfer-Torque Magnetoresistive Random Access Memory (STT-MRAM)

스핀전달토크형 자기저항메모리(STT-MRAM) 기술개발 동향

  • Kim, D.K. (Department of Materials Science and Engineering, Korea University) ;
  • Cho, J.U. (Department of Materials Science and Engineering, Korea University) ;
  • Noh, S.J. (Department of Materials Science and Engineering, Korea University) ;
  • Kim, Y.K. (Department of Materials Science and Engineering, Korea University)
  • 김도균 (고려대학교 공과대학 신소재공학부) ;
  • 조지웅 (고려대학교 공과대학 신소재공학부) ;
  • 노수정 (고려대학교 공과대학 신소재공학부) ;
  • 김영근 (고려대학교 공과대학 신소재공학부)
  • Published : 2009.02.28
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Abstract

Reduction of the critical current density ($J_c$) for STT magnetization switching is most important issue of magnetic tunnel junctions (MTJs) based MRAM. This report describes how to decrease the Jc and will introduce the recent research progresses of STT-MRAM devices with material engineering and structural improvement, respectively.

자기터널접합 기반의 MRAM(Magnetoresistive Random Access Memory)의 상용화를 위해서 가장 중요한 이슈는 쓰기 과정(writing operation)에서의 자화반전에 필요한 자화반전전류를 감소시키는 것이다. 본고에서는 나노자기소자 기술의 중요한 분야인 MRAM의 기술발전방향과 특히 스핀전달토크(Spin Transfer Torque, STT)를 이용한 자화반전전류의 저감기술 개발동향을 재료기술, 구조기술 등으로 살펴보았다.

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References

  1. J. C. Slonczewski, J. Magn. Magn. Mater., 159, L1 (1996) https://doi.org/10.1016/0304-8853(96)00062-5
  2. L. Berger, Phys. Rev. B, 54, 9353 (1996) https://doi.org/10.1103/PhysRevB.54.9353
  3. E. B. Myers, D. C. Ralph, J. A. Katine, R. N. Louie, and R. A. Buhrman, Science, 285, 867 (1999) https://doi.org/10.1126/science.285.5429.867
  4. J. A. Katine, F. J. Albert, R. A. Buhrman, E. B. Myers, and D. C. Ralph, Phys. Rev. Lett., 84, 3149 (2000) https://doi.org/10.1103/PhysRevLett.84.3149
  5. S. S. P. Parkin, U.S. Patent No. 6,834,005 (2004)
  6. S. I. Kiselev, J. C. Sankey, I. N. Krivorotov, N. C. Emley, R. J. Schoelkopf, R. A. Buhrman, and D. C. Ralph, Nature, 425, 380 (2003) https://doi.org/10.1038/nature01967
  7. 김영근, 물리학과 첨단기술, 16, 28 (2007)
  8. S. Ikeda, J. Hayakawa, Y. M. Lee, F. Matsukura, Y. Ohno, T. Hanyu, and H. Ohno, IEEE Trans. Electron Dev., 54, 991 (2007) https://doi.org/10.1109/TED.2007.894617
  9. J. Z. Sun, Phys. Rev. B, 62, 570 (2000) https://doi.org/10.1103/PhysRevB.62.570
  10. S. X. Huang, T. Y. Chen, and C. L. Chien, Appl. Phys. Lett., 92, 242509 (2008) https://doi.org/10.1063/1.2949740
  11. Y. Sakuraba, M. Hattori, M. Oogane, Y. Ando, H. Kato, A. Sakuma, T. Miyazaki, and H. Kubota, Appl. Phys. Lett., 88, 192508 (2006) https://doi.org/10.1063/1.2202724
  12. K. Tsunekawa, D. D. Djayaprawira, S. Yuasa, M. Nagai, H. Maehara, S. Yamagata, E. Okada, N. Watanabe, Y. Suzuki, and K. Ando, IEEE Trans. Magn., 42, 103 (2006) https://doi.org/10.1109/TMAG.2005.861786
  13. C. U. Cho, D. K. Kim, T. X. Wang, S. Isogami, M. Tsunoda, M. Takahashi, and Y. K. Kim, IEEE Trans. Magn., 44, 2547 (2008) https://doi.org/10.1109/TMAG.2008.2003244
  14. W. H. Butler, X.-G. Zhang, J. M. MacLaren, and T. C. Schulthess, Phys. Rev. B, 63, 054416 (2001) https://doi.org/10.1103/PhysRevB.63.054416
  15. S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. M. Lee, K. Miura, H. Hasegawa, M. Tsunoda, F. Matsukura, and H. Ohno, Appl. Phys. Lett., 93, 082508 (2008) https://doi.org/10.1063/1.2976435
  16. G. D. Fuchs, J. A. Katine, S. I. Kiselev, D. Mauri, K. S. Wooley, D. C. Ralph, and R. A. Buhrman, Phys. Rev. Lett., 96, 186603 (2006) https://doi.org/10.1103/PhysRevLett.96.186603
  17. K. Tsunekawa, D. D. Djayaprawira, M. Nagai, H. Maehara, S. Yamagata, N. Watanabe, S. Yuasa, Y. Suzuki, and K. Ando, Appl. Phys. Lett., 87, 072503 (2005) https://doi.org/10.1063/1.2012525
  18. S. Isogami, M. Tsunoda, K. Komagaki, K. Sunaga, Y. Uehara, M. Sato, T. Miyajima, and M. Takahashi, Appl. Phys. Lett., 93, 192109 (2008) https://doi.org/10.1063/1.3021372
  19. Z. Diao, A. Panchula, Y. Ding, M. Pakala, S. Wang, Z. Li, D. Apalkov, H. Nagai, A. Driskill-Smith, L. C. Wang, E. Chen, and Y. Huai, Appl. Phys. Lett., 90, 132508 (2007) https://doi.org/10.1063/1.2717556
  20. J. Hayakawa, S. Ikeda, Y. M. Lee, R. Sasaki, T. Meguro, F. Matsukura, H. Takahashi, and H. Ohno, Jpn. J. Appl. Phys., 45, L1057 (2006) https://doi.org/10.1143/JJAP.45.L1057
  21. J. Hayakawa, S. Ikeda, K. Miura, M. Yamanouchi, Y. M. Lee, R. Sasaki, M. Ichimura, K. Ito, T. Kawahara, R. Takemura, T. Meguro, F. Matsukura, H. Takahashi, H. Matsuoka, and H. Ohno, IEEE Trans. Magn., 44, 1962 (2008) https://doi.org/10.1109/TMAG.2008.924545
  22. E. Girgis, J. Schelten, J. Shi, J. Janesky, S. Tehrani, and H. Goronkin, Appl. Phys. Lett., 76, 192109 (2000) https://doi.org/10.1063/1.126779
  23. N. Nishimura, T. Hirai, A. Koganei, T. Ikeda, K. Okano, Y. Sekiguchi, and Y. Osada, J. Appl. Phys., 91, 5246 (2002) https://doi.org/10.1063/1.1459605
  24. S. Mangin, D. Ravelosona, J. A. Katine, M. J. Carey, B. D. Terris, and Eric E. Fullertone, Nature Materials, 5, 210 (2006) https://doi.org/10.1038/nmat1595
  25. M. Nakayama, T. Kai, N. Shimomura, M. Amano, E. Kitagawa, T. Nagase, M. Yoshikawa, T. Kishi, S. Ikegawa, and H. Yoda, J. Appl. Phys., 103, 07A710 (2008) https://doi.org/10.1063/1.2838335
  26. H. Yoda, T. Kishi, T. Nagase, M. Yoshikawa, E. Kitagawa, T. Daibou, K. Nishiyama, T. Kai, N. Shimomura, M. Nakayama, M. Amano, H. Aikawa, S. Takahashi, S. Ikegawa, M. Nagamine, J. Ozeki, S. Yuasa, Y. Nakatani, M. Oogane, Y. Ando, Y. Suzuki, T. Miyazaki, and K. Ando, 2008 Asian Magnetic Conference (Pusan, Korea), AA04 (2008)