JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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MRAM Technology for High Density Memory Application

  • Kim, Chang-Shuk (MRAM at the Memory R＆D Center in Hynix Semiconductor Inc.) ;
  • Jang, In-Woo (MRAM at the Memory R＆D Center in Hynix Semiconductor Inc.) ;
  • Lee, Kye-Nam (MRAM at the Memory R＆D Center in Hynix Semiconductor Inc.) ;
  • Lee, Seaung-Suk (MRAM at the Memory R＆D Center in Hynix Semiconductor Inc.) ;
  • Park, Sung-Hyung (MRAM at the Memory R＆D Center in Hynix Semiconductor Inc.) ;
  • Park, Gun-Sook (MRAM at the Memory R＆D Center in Hynix Semiconductor Inc.) ;
  • Ban, Geun-Do (MRAM at the Memory R＆D Center in Hynix Semiconductor Inc.) ;
  • Park, Young-Jin (MRAM at the Memory R＆D Center in Hynix Semiconductor Inc.)
  • Published : 2002.09.01
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Abstract

MRAM(magnetic random access memory) is a promising candidate for a universal memory with non-volatile, fast operation speed and low power consumption. The simplest architecture of MRAM cell is a combination of MTJ(magnetic tunnel junction) as a data storage part and MOS transistor as a data selection part. This article will review the general development status of MRAM and discuss the issues. The key issues of MRAM technology as a future memory candidate are resistance control and low current operation for small enough device size. Switching issues are controllable with a choice of appropriate shape and fine patterning process. The control of fabrication is rather important to realize an actual memory device for MRAM technology.

Keywords

References

  1. S.S.P. Parkin et al., J. Appl, Phys. 85 (1999) 5828 https://doi.org/10.1063/1.369932
  2. J.M. Daughton, Ferroelectrics, 116 (1991) 175
  3. J.C. Slonczewski, Phys. Rev. B39 (1989) 6995. https://doi.org/10.1103/PhysRevB.39.6995
  4. A. Yelon, in 'Physics of Thin Films: Advances in Research and Development, edited by M. Francombe and R. Hoffman (Academic, New York, 1971), Vol.6, p. 205
  5. S.S.P. Parkin, Phys. Rev. Lett. 71 (1993) 1641 https://doi.org/10.1103/PhysRevLett.71.1641
  6. M. Julliere, Phys. Lett. 54A (1975) 225
  7. S. Tehrani et al., The Int'l Symposium on Magnetics of KMS, Sept. (2000)
  8. H.J. Shim et al., J. Appl, Phys. 92 (2002) 1095 https://doi.org/10.1063/1.1488252
  9. J. Shi et al., IEEE Trans. Magn. 34 (1998) 997 https://doi.org/10.1109/20.706336
  10. T. Zhu et al., IEEE Trans. Magn. 33 (1997) 3601 https://doi.org/10.1109/20.619510