Technology of MRAM (Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell |
Park, Wanjun
(SAMSUNG Advanced Institute of Technology, MD Lab)
Song, I-Hun (SAMSUNG Advanced Institute of Technology, MD Lab) Park, Sangjin (SAMSUNG Advanced Institute of Technology, MD Lab) Kim, Teawan (SAMSUNG Advanced Institute of Technology, MD Lab) |
1 | K.J. Lee and Wanjun Park, 'Origin of local magnetic moment distortion in deep sub-micron size MRAM cell', To be published |
2 | H. S. Jeong, G. T. Jeong, G. H. Koh, I.H. Song, W. J. Park, T. W. Kim, S. J. Chung, Y. N. Hwang, S. J. Ahn, H. J.Kim, J. S.Hong, W. C. Jeong, S. H. Lee, J. H. Park, W. Y. Cho, J. S. Kim, S. H. Song, H. J. Kim, S. O. Park, U. I. Chung, Kinam Kim, 'Fully integrated 64Kb MRAM with novel reference cell scheme', In press to IEDM tech. Digest, 2002 |
3 | P. K. Naji, M. Durlam, S. Tehrani, J. Calder, M. F. DeHerrera, 'A 256kb 3.0V IT1MTJ nonvolatile magnetoresistive RAM', ISSCC Digest of technical papers, vol.44, pp.122-123, Feb., 2001 |
4 | R. E. Scheuerlein, W. J. Gallagher, S. S. P. Parkin, C. A. Lee, S. T. Roy, R. Robertazzi, W. R. Reohr, 'A 10ns read and write non-volatile memory array using a magnetic tunnel junction and FET switch in each cell', ISSCC Digest of technical papers, vol.43, pp.128-129, Feb., 2000 DOI |
5 | R. R. Katti, 'Current-in-plane pseudo spin valve device performance for giant magneto-resistance random access memory application', J. Appl. Phys., vol.91, no.10, pp.7245-7250, 2002 DOI ScienceOn |
6 | M. Baibich, J. Broto, A. Fert, F. Nguyen Van Dau, F. Petroff, P. Etienne, G. Creuzet, A. Friederich, J. Chazelas, 'Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices', Phys. Rev. Lett., 61, pp.2472-2475, 1988 DOI ScienceOn |