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http://dx.doi.org/10.4283/JKMS.2008.18.3.103

Research of Optimal MRAM Adding Pole for High Gb/Chip  

Kim, Dong-Sok (Dept. of Electrical Engineering, Pusan National University)
Won, Hyuk (Dept. of Electrical Engineering, Pusan National University)
Park, Gwan-Soo (Dept. of Electrical Engineering, Pusan National University)
Publication Information
Journal of the Korean Magnetics Society / v.18, no.3, 2008 , pp. 103-108 More about this Journal
Abstract
Magnetoresistive random access memory (MRAM) don't get very public face on the field of non-volatile memory. Because recording capacity of MRAM is smaller than other non-volatile memory and structurally, magnetic efficiency of MRAM is very bad. We diminish a size of one cell in order to make MRAM of high recording capacity. But It don't make high recording field in general structures consisting of two current wire. Accordingly, We make a cell of small size is impossible. In this paper, we suggest new MRAM that it have two pole of high permeability on both ends of recording layer. Because magnetic efficiency of new MRAM is higher than exiting MRAM, it can make high recording field. And we can diminish the size of one cell due to recording layer of high coercivity. We used three-dimension finite element method to prove the reliability.
Keywords
MRAM; pMTJ; FEM; PTP MRAM;
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