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http://dx.doi.org/10.4283/JKMS.2009.19.1.022

Technology Trend of Spin-Transfer-Torque Magnetoresistive Random Access Memory (STT-MRAM)  

Kim, D.K. (Department of Materials Science and Engineering, Korea University)
Cho, J.U. (Department of Materials Science and Engineering, Korea University)
Noh, S.J. (Department of Materials Science and Engineering, Korea University)
Kim, Y.K. (Department of Materials Science and Engineering, Korea University)
Publication Information
Journal of the Korean Magnetics Society / v.19, no.1, 2009 , pp. 22-27 More about this Journal
Abstract
Reduction of the critical current density ($J_c$) for STT magnetization switching is most important issue of magnetic tunnel junctions (MTJs) based MRAM. This report describes how to decrease the Jc and will introduce the recent research progresses of STT-MRAM devices with material engineering and structural improvement, respectively.
Keywords
Magnetic tunnel juctions; MRAM; spin transfer torque; current induced magnetization switching;
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