• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.579-582
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• 2005

In this study, the electrical characteristic of asymmetric high voltage MOSFET (AHVMOSFET) for display IC was investigated. Measurement data are taken over range of temperature (300K-400K) and various extended drain length, and gate oxide thickness ($175{\AA}$, $350{\AA}$). In high temperature condition, drain current decreased over 30% and max transconductance deceased over 40%, and specific on-resistance increased over 30% in comparison with room temperature.

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.276-281
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• 2012

Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. Generally most of field effect concentrations shows on the edge of power devices. Can be improve the breakdown characteristic using edge termination technology. In this paper, considering the variables that affect the breakdown voltage and optimization of parameters result for 600 V Super Junction MOSFET Field ring.

• Transactions on Electrical and Electronic Materials
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• 제17권5호
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• pp.302-305
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• 2016

In this paper, a low on-resistance and high current driving capability trench gate power metal-oxide-semiconductor field-effect transistor (MOSFET) incorporating a current sensing feature is proposed and evaluated. In order to realize higher cell density, higher current driving capability, cost-effective production, and higher reliability, self-aligned trench etching and hydrogen annealing techniques are developed. While maintaining low threshold voltage and simultaneously improving gate oxide integrity, the double-layer gate oxide technology was adapted. The trench gate power MOSFET was designed with a 0.6 μm trench width and 3.0 μm cell pitch. The evaluated on-resistance and breakdown voltage of the device were less than 24 mΩ and 105 V, respectively. The measured sensing ratio was approximately 70:1. Sensing ratio variations depending on the gate applied voltage of 4 V ~ 10 V were less than 5.6%.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 A
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• pp.345-347
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• 1994

It is importent to have the switching frequency of power supplies increase in order to reduce their size and weight. But according to increasing the switching frequency, there are several defacts - that is switching losses, high voltage/current stresses and conduction losses and so on. That's why soft switching method was proposed. This paper presents the simulation and analysis of the new proposed Full bridge Zero-Voltage-Transition PWM DC-DC converter for developing that unit. This circuit doesen't increase the voltage and current stresses of main MOSFET switches. Voltage type quasi-resorent method is applied and expected high effenciency. Switching frequency is 100KHz and main switches are MOSFET.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 춘계학술대회 논문집 에너지변화시스템부문
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• pp.131-135
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• 2009

This paper reviews the characteristics of Power MOSFET device technology that are leading to improvements in power loss for power electronic system. The silicon bipolar power transistor has been displaced by silicon power MOSFET's in low and high voltage system. The power electronic technology requires the marriage of power device technology with MOS-gated device and bipolar analog circuits.

• 한국전기전자재료학회논문지
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• 제23권9호
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• pp.667-670
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• 2010

In this paper, a high voltage current sensing circuit for boost converter is designed and verified by Cadence SPECTRE simulations. The current mirror pair, power and sensing metal-oxide semiconductor field effect transistors (MOSFETs) with size ratio of K, is used in our on-chip current sensing circuit. Very low drain voltages of the current mirror pair should be matched to give accurate current sensing, so a folded-cascode opamp with a PMOS input pair is used in our design. A high voltage high side lateral-diffused MOS transistor (LDMOST) switch is used between the current sensing circuit and power MOSFET to protect the current sensing circuit from the high output voltage. Simulation results using 0.35 ${\mu}m$ BCD process show that current sensing is accurate and the pulse frequency modulation (PFM) boost converter using the proposed current sensing circuit satisfies with the specifications.

• 한국정보통신학회논문지
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• 제18권9호
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• pp.2183-2188
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• 2014

본 연구에서는 비대칭 이중게이트(double gate; DG) MOSFET의 채널 도핑농도 변화에 따른 문턱전압이동 현상에 대하여 분석하였다. 비대칭 DGMOSFET는 일반적으로 저 농도로 채널을 도핑하여 완전결핍상태로 동작하도록 제작한다. 불순물산란의 감소에 의한 고속 동작이 가능하므로 고주파소자에 응용할 수 있다는 장점이 있다. 미세소자에서 필연적으로 발생하고 있는 단채널 효과 중 문턱전압이동현상이 비대칭 DGMOSFET의 채널도핑농도의 변화에 따라 관찰하고자 한다. 문턱전압을 구하기 위하여 해석학적 전위분포를 포아송방정식으로부터 급수형태로 유도하였다. 채널길이와 두께, 산화막 두께 및 도핑분포함수의 변화 등을 파라미터로 하여 도핑농도에 따라 문턱전압의 이동현상을 관찰하였다. 결과적으로 도핑농도가 증가하면 문턱전압이 증가하였으며 채널길이가 감소하면 문턱전압이 크게 감소하였다. 또한 채널두께와 하단게이트 전압이 감소하면 문턱전압이 크게 증가하는 것을 알 수 있었다. 마지막으로 산화막 두께가 감소하면 문턱전압이 증가하는 것을 알 수 있었다.

• ETRI Journal
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• 제36권5호
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• pp.829-834
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• 2014

In this paper, a lateral power metal-oxide-semiconductor field-effect transistor with ultra-low specific on-resistance is proposed to be applied to a high-voltage (up to 200 V) integrated chip. The proposed structure has two characteristics. Firstly, a high level of drift doping concentration can be kept because a tilt-implanted p-drift layer assists in the full depletion of the n-drift region. Secondly, charge imbalance is avoided by an extended trench gate, which suppresses the trench corner effect occurring in the n-drift region and helps achieve a high breakdown voltage (BV). Compared to a conventional trench gate, the simulation result shows a 37.5% decrease in $R_{on.sp}$ and a 16% improvement in BV.

• 대한전자공학회논문지SD
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• 제47권7호
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• pp.1-7
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• 2010

Fin 폭이 다른 accumulation-mode Pi-gate p-채널 MOSFET의 고온특성을 측정 분석하였다. 사용된 소자는 Fin 높이는 10nm 이며 폭은 30nm, 40nm, 50nm 의 3종류이다. 온도에 따라서 드레인 전류, 문턱전압, subthreshold swing, 유효이동도 및 누설 전류 특성을 측정하였다. 온도가 증가할수록 드레인 전류는 상온에서 보다 약간 증가하는 현상이 나타났다. 온도에 따른 문턱전압의 변화는 inversion-mode 소자 보다 작은 것으로 측정되었다. 유효이동도는 온도가 증가할수록 감소하였으나 Fin 폭이 감소할수록 이동도는 큰 것을 알 수 있었다.

• 전기전자학회논문지
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• 제19권2호
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• pp.232-236
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• 2015

Super-junction trench MOSFET (SJ TMOSFET) devices are well known for lower specific on-resistance and high breakdown voltage (BV). For a conventional power MOSFET (metal-oxide semiconductor field-effect transistor) such as trench double-diffused MOSFET (TDMOSFET), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a SJ TMOSFET structure is suggested, but sensing the temperature distribution of TMOSFET is very important in the application since heat is generated in the junction area affecting TMOSFET. In this paper, analyzing the temperature characteristics for different number bonding for SJ TMOSFET with an embedded temperature sensor is carried out after designing the diode temperature sensor at the surface of SJ TMOSFET for the class of 100 V and 100 A for a BLDC motor.