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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Extended Trench Gate Superjunction Lateral Power MOSFET for Ultra-Low Specific on-Resistance and High Breakdown Voltage

  • Cho, Doohyung (Department of Electronic Engineering, Sogang University) ;
  • Kim, Kwangsoo (Department of Electronic Engineering, Sogang University)
  • Received : 2013.08.21
  • Accepted : 2014.03.28
  • Published : 2014.10.01
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Abstract

In this paper, a lateral power metal-oxide-semiconductor field-effect transistor with ultra-low specific on-resistance is proposed to be applied to a high-voltage (up to 200 V) integrated chip. The proposed structure has two characteristics. Firstly, a high level of drift doping concentration can be kept because a tilt-implanted p-drift layer assists in the full depletion of the n-drift region. Secondly, charge imbalance is avoided by an extended trench gate, which suppresses the trench corner effect occurring in the n-drift region and helps achieve a high breakdown voltage (BV). Compared to a conventional trench gate, the simulation result shows a 37.5% decrease in $R_{on.sp}$ and a 16% improvement in BV.

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References

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