[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4218/etrij.14.0113.0826

Extended Trench Gate Superjunction Lateral Power MOSFET for Ultra-Low Specific on-Resistance and High Breakdown Voltage

Cho, Doohyung (Department of Electronic Engineering, Sogang University)
Kim, Kwangsoo (Department of Electronic Engineering, Sogang University)

Publication Information

ETRI Journal / v.36, no.5, 2014 , pp. 829-834 More about this Journal

Abstract

In this paper, a lateral power metal-oxide-semiconductor field-effect transistor with ultra-low specific on-resistance is proposed to be applied to a high-voltage (up to 200 V) integrated chip. The proposed structure has two characteristics. Firstly, a high level of drift doping concentration can be kept because a tilt-implanted p-drift layer assists in the full depletion of the n-drift region. Secondly, charge imbalance is avoided by an extended trench gate, which suppresses the trench corner effect occurring in the n-drift region and helps achieve a high breakdown voltage (BV). Compared to a conventional trench gate, the simulation result shows a 37.5% decrease in $R_{on.sp}$ and a 16% improvement in BV.

Keywords

Superjunction; power MOSFET; LDMOSFET; breakdown; on-resistance;

Citations & Related Records

Reference

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