Browse > Article
http://dx.doi.org/10.4313/JKEM.2010.23.9.667

Current Sensing Circuit of MOSFET Switch for Boost Converter  

Min, Jun-Sik (Department of Semiconductor Engineering, Chungbuk National University)
No, Bo-Mi (Department of Semiconductor Engineering, Chungbuk National University)
Kim, Eui-Jin (Department of Semiconductor Engineering, Chungbuk National University)
Lee, Chan-Soo (Department of Semiconductor Engineering, Chungbuk National University)
Kim, Yeong-Seuk (Department of Semiconductor Engineering, Chungbuk National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.23, no.9, 2010 , pp. 667-670 More about this Journal
Abstract
In this paper, a high voltage current sensing circuit for boost converter is designed and verified by Cadence SPECTRE simulations. The current mirror pair, power and sensing metal-oxide semiconductor field effect transistors (MOSFETs) with size ratio of K, is used in our on-chip current sensing circuit. Very low drain voltages of the current mirror pair should be matched to give accurate current sensing, so a folded-cascode opamp with a PMOS input pair is used in our design. A high voltage high side lateral-diffused MOS transistor (LDMOST) switch is used between the current sensing circuit and power MOSFET to protect the current sensing circuit from the high output voltage. Simulation results using 0.35 ${\mu}m$ BCD process show that current sensing is accurate and the pulse frequency modulation (PFM) boost converter using the proposed current sensing circuit satisfies with the specifications.
Keywords
Boost converter; LED driver; LDMOST; Current-sensing circuit;
Citations & Related Records
연도 인용수 순위
  • Reference
1 H. P. Forghani-zadeh and G. A. Rincon-Mora, Proc. 45th IEEE Midwest Symp. Circuits Syst.(MWSCAS) 2, II-577 (2002).
2 C. F. Lee and P. K. T. Mok, IEEE J. Solid-State Circuits 39, 3 (2004).   DOI
3 C. Y. Leung, P. K. T. Mok, K. N. Leung, and M. Chan, IEEE Trans. Circuits and Syst. II: Express Briefs 52, 394 (2005).   DOI
4 C. Y. Leung, P. K. T. Mok, and K. N. Leung, IEEE J. Solid-State Circuits 40, 2265 (2005).   DOI