Browse > Article
http://dx.doi.org/10.4313/JKEM.2012.25.4.276

A Study on Field Ring Design of 600 V Super Junction Power MOSFET  

Hong, Young-Sung (Department of Photovoltaic Engineering, Far East University)
Jung, Eun-Sik (Maple Semiconductor, Incorporated)
Kang, Ey-Goo (Department of Photovoltaic Engineering, Far East University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.4, 2012 , pp. 276-281 More about this Journal
Abstract
Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. Generally most of field effect concentrations shows on the edge of power devices. Can be improve the breakdown characteristic using edge termination technology. In this paper, considering the variables that affect the breakdown voltage and optimization of parameters result for 600 V Super Junction MOSFET Field ring.
Keywords
Power device; Field ring; Breakdown voltage; Edge termination; Super Junction;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 J. He, M. Chan, X. Zhang, and Y. Wang, Solid State Electron., 50, 1375 (2006).   DOI   ScienceOn
2 E. G. Kang, B. J. Kim, and Y. H. Lee, J. KIEEME, 23, 1 (2010).
3 A. W. Ludikhuize, IEEE Trans. Electron Devices, 8, 1582 (1991).
4 D. G. Bae and S. K. Chung, Solid State Electron., 42, 349 (1998).   DOI   ScienceOn
5 C. Y. Chang and C. T. Sune, Elec. Dev. Lett., EDL_7, 35 (1986).
6 V. Boisson, M. Le Helley, and J. P. Chante, IEEE Trans. Electron Dev., ED_32, 838 (1985).