DOI QR코드

DOI QR Code

Design of Super-junction TMOSFET with Embedded Temperature Sensor

  • Received : 2015.03.18
  • Accepted : 2015.06.01
  • Published : 2015.06.30

Abstract

Super-junction trench MOSFET (SJ TMOSFET) devices are well known for lower specific on-resistance and high breakdown voltage (BV). For a conventional power MOSFET (metal-oxide semiconductor field-effect transistor) such as trench double-diffused MOSFET (TDMOSFET), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a SJ TMOSFET structure is suggested, but sensing the temperature distribution of TMOSFET is very important in the application since heat is generated in the junction area affecting TMOSFET. In this paper, analyzing the temperature characteristics for different number bonding for SJ TMOSFET with an embedded temperature sensor is carried out after designing the diode temperature sensor at the surface of SJ TMOSFET for the class of 100 V and 100 A for a BLDC motor.

Keywords

References

  1. B. J. Baliga, "Advanced Power MOSFET Concepts," New York Springer-Science, pp. 265-354, 373, 2010.
  2. Y. H. Lho et. al., "Design of 100-V non-uniform 100-V super-junction trench power MOSFET with low on-resistance," IEICE Electronics Express, Vol. 9, No. 13, pp. 1109-1114, July. 2012. https://doi.org/10.1587/elex.9.1109
  3. David L. Blackburn, "Temperature Measurements of Semiconductor Devices," 20th IEEE SEMI-THERM Symposium, pp. 70-79, 2004.
  4. S. M. Sze, "Physics of Semiconductor Devices," Third Edition, Wiley Interscience, pp. 95, 2007.
  5. Helmut KOck et. al., "Design of a test chip with small embedded temperature sensor structures realized in a common-drain power trench technology," IEEE Conference on Microelectronic Test Structure, Amsterdam, The Netherlands, April 4-7, 2011.
  6. SILVACO TCAD Manual, Atlas, 2011.
  7. Emmanual Marcault et al., "Distributed Electro-thermal Modeling Methodology for MOS Gated Power Devices Simulations," Exploring Processor Parallelism Estimation Methods and Optimization Strategies, pp. 148-152, 2013.
  8. H. Dia, "A temperature dependent power MOSFET model for switching application," Thermal Investigation of ICs and Systems, Therminic 2009. 15thInternational Workshopon, vol., no. pp. 87-90, 7-9, Oct. 2009.
  9. Kosel V, et. al., "A Non-linear thermal modeling of DMOS transistor and validation using electrical measurements and FEM simulations. Micro electro J ., pp. 889-896, 2010.
  10. LTspice IV, 2014 Linear Technology Corporation
  11. ANSYS Fluent User's Guide Release 14.0 Nov. 2011.