Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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High Temperature Characterization of Accumulation-mode Pi-gate pMOSFETs

고온에서 accumulation-mode Pi-gate p-MOSFET 특성

  • Kim, Jin-Young (Department of Electronics Engineering, University of Incheon) ;
  • Yu, Chong-Gun (Department of Electronics Engineering, University of Incheon) ;
  • Park, Jong-Tae (Department of Electronics Engineering, University of Incheon)
  • Received : 2010.01.26
  • Accepted : 2010.06.28
  • Published : 2010.07.25
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Abstract

The device performances of accumulation-mode Pi-gate pMOSFETs with different fin widths have been characterized at high operating temperatures. The device fin height is 10nm and fin widths are 30nm, 40nm, and 50nm. The variation of the drain current, threshold voltage, subthreshold swing, effective mobility, and leakage current have been investigated as a function of operating temperatures. The drain current at high temperature is slightly larger than at room temperature. The variation of the threshold voltage as a function of the operating temperature is smaller than that of the inversion-mode MOSFETs. The effective mobility is decreased with the increase of operating temperature. It is observed that the effective mobility is enhanced as the fin width decreases.

Fin 폭이 다른 accumulation-mode Pi-gate p-채널 MOSFET의 고온특성을 측정 분석하였다. 사용된 소자는 Fin 높이는 10nm 이며 폭은 30nm, 40nm, 50nm 의 3종류이다. 온도에 따라서 드레인 전류, 문턱전압, subthreshold swing, 유효이동도 및 누설 전류 특성을 측정하였다. 온도가 증가할수록 드레인 전류는 상온에서 보다 약간 증가하는 현상이 나타났다. 온도에 따른 문턱전압의 변화는 inversion-mode 소자 보다 작은 것으로 측정되었다. 유효이동도는 온도가 증가할수록 감소하였으나 Fin 폭이 감소할수록 이동도는 큰 것을 알 수 있었다.

Keywords

Acknowledgement

Supported by : 인천대학교

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