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High Temperature Characterization of Accumulation-mode Pi-gate pMOSFETs  

Kim, Jin-Young (Department of Electronics Engineering, University of Incheon)
Yu, Chong-Gun (Department of Electronics Engineering, University of Incheon)
Park, Jong-Tae (Department of Electronics Engineering, University of Incheon)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.47, no.7, 2010 , pp. 1-7 More about this Journal
Abstract
The device performances of accumulation-mode Pi-gate pMOSFETs with different fin widths have been characterized at high operating temperatures. The device fin height is 10nm and fin widths are 30nm, 40nm, and 50nm. The variation of the drain current, threshold voltage, subthreshold swing, effective mobility, and leakage current have been investigated as a function of operating temperatures. The drain current at high temperature is slightly larger than at room temperature. The variation of the threshold voltage as a function of the operating temperature is smaller than that of the inversion-mode MOSFETs. The effective mobility is decreased with the increase of operating temperature. It is observed that the effective mobility is enhanced as the fin width decreases.
Keywords
SOI MOSFET; Pi-gate; Accumulation-mode; pMOSFET;
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