• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.1
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• pp.56-63
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• 2008

This paper describes a 12 bit 1GS/s current mode segmented DAC for WCDMA communication. The proposed circuit in this paper employes segmented structure which consists of 4bit binary weighted structure in the LSB and 4bit thermometer decoder structure in the mSB and MSB. The proposed DAC uses delay time compensation circuits in order to suppress performance decline by delay time in segmented structure. The delay time compensation circuit comprises of phase frequency detector, charge pump, and control circuits, so that suppress delay time by binary weighted structure and thermometer decoder structure. The proposed DAC uses CMOS $0.18{\mu}m$ 1-poly 6-metal n-well process, and measured INL/DNL are below ${\pm}0.93LSB/{\pm}0.62LSB$. SFDR is approximately 60dB and SNDR is 51dB at 1MHz input frequency. Single DAC's power consumption is 46.2mW.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.685-691
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• 2003

This work describes a 3 V 12b 100 MS/s CMOS digital-to-analog converter (DAC) for high-speed communication system applications. The proposed DAC is composed of a unit current-cell matrix for 8 MSBs and a binary-weighted array for 4 LSBs, considering linearity, power consumption, chip area, and glitch energy. The low-glitch switch driving circuit is employed to improve the linearity and the dynamic performance. Current sources of the DAC are laid out separately from the current-cell switch matrix core. The prototype DAC is implemented in a 0.35 urn n-well single-poly quad-metal CMOS technology. The measured DNL and INL of the prototype DAC are within $\pm$0.75 LSB and $\pm$1.73 LSB, respectively, and the spurious-free dynamic range (SFDR) is 64 dB at 100 MS/s with a 10 MHz input sinewave. The DAC dissipates 91 mW at 3 V and occupies the active die area of 2.2 mm ${\times}$ 2.0 mm.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.619-620
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• 2006

This paper presents a design of a 6-bit 2.704Gsamples/s D/A converter (DAC) for DS-CDMA UWB transceivers. The proposed DAC was designed with a current steering segmented 4+2 architecture for high frequency sampling rate. For low glitches, optimized deglitch circuit is adopted for the selection of current sources. The measured integral nonlinearity (INL) is -0.081 LSB and the measured differential nonlinearity (DNL) is -0.065 LSB. The DAC implemented in a 0.13um CMOS technology shows s spurious free dynamic range (SFDR) of 50dB from dc to Nyquist frequency. The prototype DAC consumes 28mW for a Nyquist sinusoidal output signal at a 2.704Gsamples/s. The chip has an active area of $0.76mm^2$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.68 no.1
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• pp.90-97
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• 2019

The charge redistribution digital-to-analog converter(CR-DAC) is often used for successive approximation register analog-to-digital converter(SAR ADC) that requiring low power consumption and small circuit area. However, CR-DAC is required 2 to the power of N unit capacitors to generate reference voltage for successive approximation of the N-bit SAR ADC, and many unit capacitors occupy large circuit area and consume more power. In order to improve this problem, this paper proposes SAR ADC using series capacitor DAC. The series capacitor DAC is required 2(1+N) unit capacitors to generate reference voltage for successive approximation and charges only two capacitors of the reference generation block. Because of these structural characteristics, the SAR ADC using series capacitor DAC can reduce the power consumption and circuit area. Proposed SAR ADC was designed in CMOS 180nm process, and at 1.8V supply voltage and 500kS/s sampling rate, proposed 6-bit SAR ADC have signal-to-noise and distortion ratio(SNDR) of 36.49dB, effective number of bits(ENOB) of 5.77-bit, power consumption of 294uW.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.2
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• pp.47-52
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• 2017

In this paper, CMOS SAR A/D converter 1.8V supply for the design of an A/D converter having an middle speed for the biological signal processing was designed. This paper proposes design of a 10-bit SAR Analog to Digital Converter improving linearity driven by MSB node of C-DAC array divided into 4 equal parts. It enhances linearity property, by retaining the analog input signal charging time at MSB node. Because MSB node samples analog input, it enhances resolution through getting initial input signal precisely. By using split capacitor on C-DAC array, it reduced chip size and power dissipation. The Proposed SAR A/D Converter is fabricated in 0.18um CMOS and measured 7.5 bits of ENOB at sampling frequency 4MS/s and power supply of 1.8V. It occupies a core area of $850{\times}650um^2$ and consumes 123.105uW. Therefore it results in 170.016fJ/step of FOM(Figure of Merit).

• 전자공학회논문지 IE
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• v.43 no.3
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• pp.6-12
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• 2006

This paper described an 8bit, 100Msample/s CMOS D/A converter using a glitch-time minimization technique for the high-speed sampling rate of 100MHz level. The proposed DAC was implemented in $0.35{\mu}m$ Hynix CMOS technology and adopts a current mode architecture to optimize sampling rate, resolution, chip area. The DAC linear characteristics was similar to the proposed specification and the prototype error between DNL and INL is less than $\pm$0.09LSB respectively. Also, the manufactured DAC chip was analyzed the cause of error operation and proposed the field considerations for chip test.

• ETRI Journal
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• v.35 no.1
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• pp.158-161
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• 2013

This letter proposes a low-power current-steering digital-to-analog converter (DAC). The proposed DAC reduces the clock power by cutting the clock signal to the current-source cells in which the data will not be changed. The 10-bit DAC is implemented using a $0.13-{\mu}m$ CMOS process with $V_{DD}$=1.2 V. Its area is $0.21\;mm^2$. It consumes 4.46 mW at a 1-MHz signal frequency and 200-MHz sampling rate. The clock power is reduced to 30.9% and 36.2% of a conventional DAC at 1.25-MHz and 10-MHz signal frequencies, respectively. The measured spurious free dynamic ranges are 72.8 dB and 56.1 dB at 1-MHz and 50-MHz signal frequencies, respectively.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.1241-1246
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• 2005

This paper described an 8bit, 100Msample/s CMOS D/A converter using a glich-time minimization technique for the high-speed sampling rate of 100MHz level. The proposed DAC was implemented in 0,35um Hynix CMOS technology and adopts a current mode architecture to optimize sampling rate, resolution, chip area. The DAC linear characteristics was similar to the proposed specification the prototype error between DNL and INL is less than ${\pm}0.09LSB$ respectively. Also, fab-out chip was tested, analysed the cause of error operation, and proposed the field considerations for chip test.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.3
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• pp.270-277
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• 2012

This paper presents a new DAC design strategy to achieve a wideband dynamic linearity by increasing the bandwidth of the output impedance. In order to reduce the dominant parasitic capacitance of the conventional matrix structure, all the cells associated with a unit current source and its control are stacked in a single column very closely (stacked unit cell structure). To further reduce the parasitic capacitance, the size of the unit current source is considerably reduced at the sacrifice of matching yield. The degraded matching of the current sources is compensated for by a self-calibration. A prototype 6-bit 3.3-GS/s current-steering full binary DAC was fabricated in a 1P9M 90 nm CMOS process. The DAC shows an SFDR of 36.4 dB at 3.3 GS/s Nyquist input signal. The active area of the DAC occupies only $0.0546mm^2$ (0.21 mm ${\times}$ 0.26 mm).

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.4
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• pp.211-216
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• 2003

This work describes a 3 V 12b 100 MS/s CMOS digital-to-analog converter (DAC) for high-speed communication system applications. The proposed DAC is composed of a unit current-cell matrix for 8 MSBs and a binary-weighted array for 4 LSBs, trading-off linearity, power consumption, chip area, and glitch energy with this process. The low-glitch switch driving circuits are employed to improve linearity and dynamic performance. Current sources of the DAC are laid out separately from the current-cell switch matrix core block to reduce transient noise coupling. The prototype DAC is implemented in a 0.35 um n-well single-poly quad-metal CMOS technology and the measured DNL and INL are within ${\pm}0.75$ LSB and ${\pm}1.73$ LSB at 12b, respectively. The spurious-free dynamic range (SFDR) is 64 dB at 100 MS/s with a 10 MHz input sinewave. The DAC dissipates 91 mW at 3 V and occupies the active die area of $2.2{\;}mm{\;}{\times}{\;}2.0{\;}mm$