• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.549-552
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• 2004

The thesis describes the design of 12bit digital-to-analog converter (DAC) which shows the conversion rate of 500MHz and the power supply of 3.3V with 0.35${\mu}m$ CMOS 1-poly 4-metal process for advanced wireless transceiver of high speed and high resolution. The proposed DAC employes segmented structure which consists of 6bit MSB, 3bit mSB, 3bit LSB for area efficiency Also, using a optimized aspect ratio of process and new triple diagonal symmetric centroid sequence for high yield and high linearity. The proposed 12bit current mode DAC was employs new deglitch circuit for the decrement of the glitch energy. Simulation results show the conversion rate of 500MHz, and the power dissipation of 85mW at single 3.3V supply voltage. Both DNL and INL are found to be smaller than ${\pm}0.65LSB/{\pm}0.8LSB$.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.286-289
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• 1991

We simulated ion implantation and annealing condition of 1 ${\mu}m$ CMOS device using process simulator, SUPREM-II. In this simulation, optimal condition of ion implantation for symmetric threshold voltage determination of PMOS and NMOS region, junction depth and sheet resistance of source/drain region, impurity profile of each region are investigated. Ion implantation dose for 3 ${\mu}m$ N-well junction depth and symmetric threshold voltage of $|0.6|{\pm}0.1$ V were $1.9E12Cm^{-2}$(for phosphorus), $1.7E122Cm^{-2}$(for boron) respectively. Also annealing condition for dopant activation are examined about $900^{\circ}C$, 30 minutes. After final process step, N-well junction, P+ S/D junction and N+ S/D junction depth are calculated 3.16 ${\mu}m$, 0.45 ${\mu}m$ and 0.25 ${\mu}m$ respectively.

• Journal of information and communication convergence engineering
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• v.8 no.1
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• pp.51-58
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• 2010

This paper proposes an edge adaptive color interpolation for an ultra-small HD-grade complementary metal-oxide semiconductor (CMOS) video sensor in camera phones that can process 720-p/30-fps videos. Recently, proposed methods with great image quality perceptually reconstruct the green component and then estimate the red/blue component using the reconstructed green and neighbor red and blue pixels. However, these methods require the bulky memory line buffers in order to temporally store the reconstructed green components. The edge adaptive color interpolation method uses seven or nine patterns to calculate the six edge directions. At the same time, the threshold values are adaptively adjusted by the sum of the color values of the selected pixels. This method selects the suitable one among the patterns using two flowcharts proposed in this paper, and then interpolates the missing color values. For verification, we calculated the peak-signal-to-noise-ratio (PSNR) in the test images, which were processed by the proposed algorithm, and compared the calculated PSNR of the existing methods. The proposed color interpolation is also fabricated with the 0.18-${\mu}m$ CMOS flash memory process.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.36 no.1
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• pp.1-8
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• 2004

One of the most frequently used method for measurement of the degree of sizing (viz., hydrophobicity) is the Stockigt test. However, the Stockigt test was influenced by various factors such as dropping height, dropping amount, dropping speed and viewing angle. The resultant data of the sizing degree on the same specimen also varied according to different testers. Thus, the Stockigt test should be modified to be regarded as a highly reliable and reproducible standard method. For modifying the Stockigt test, it was required to quantify red coloration by reaction between 1％ ferric chloride and 2％ ammonium thiocyante during Stockigt testing. The cameras capturing the serial images during the red coloration process were the CMOS (Complementary Metal Oxide Semiconductor)-type and CCD (Charge Coupled Device)-type cameras. For measurement based on KS M 7025, the CCD-type camera must be used due to its high resolution, and on the other hand, for measurement based on Tappi Useful Method 429, the CMOS-type camera may be used owing to its low resolution. It was needed to covert the RGB values of a droplet image into HSV(Hue, Saturation, and Value) values because the human eyes are much closer to HSV than RGB. Among HSV values, the Hue value was accepted as the most reliable index consistent with the red coloration process by excluding the surrounding conditions such as light, tester's movement etc.

• Journal of IKEEE
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• v.20 no.4
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• pp.428-431
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• 2016

Power semiconductor devices had been producted with bipolar only processes, but Bipolar-CMOS-DMOS(BCD) processes have been adapted recently to fabricate these devices since most foundry companies have provided BCD processes instead of Bipolar only processes. In this study, Regulator and OP Amp are used as most popular design IPs and BCD processes for the designing are converted from bipolar only processes. Power Switching Sensor(PSS) ICs are designed specifically and fabricated on a silicon chip. The operation results of the packaged chip show the good matching with test results of the simulation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.4
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• pp.318-325
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• 2008

A 1.2 V 7-bit 1 GS/s CMOS flash ADC with an interpolation factor of 4 is implemented by using a $0.13\;{\mu}m$ CMOS process. A digital calibration of DC reference voltage is proposed for the $1^{st}$ preamp array to compensate for the input offset voltage of differrential amplifiers without disturbing the high-speed signal path. A 3-stage cascaded voting process is used in the digital encoder block to eliminate the conescutive bubbles up to seven completely, if the $2^{nd}$ preamp output is assumed to have a single bubble at most. ENOB and the power consumption were measured to be 5.88 bits and 212 mW with a 195 MHz $400\;mV_{p-p}$ sine wave input.

• Journal of Sensor Science and Technology
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• v.13 no.3
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• pp.188-194
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• 2004

With a remarkable advance in CMOS (complimentary metal-oxide-semiconductor) process technology, a variety of vision sensors with signal processing circuits for complicated functions are actively being developed. Especially, as the principles of signal processing in human retina have been revealed, a series of vision chips imitating human retina have been reported. Human retina is able to detect the edge and motion of an object effectively. The edge detection among the several functions of the retina is accomplished by the cells called photoreceptor, horizontal cell and bipolar cell. We designed a CMOS vision chip by modeling cells of the retina as hardwares involved in edge and motion detection. The designed vision chip was fabricated using $0.6{\mu}m$ CMOS process and the characteristics were measured. Having reliable output characteristics, this chip can be used at the input stage for many applications, like targe tracking system, fingerprint recognition system, human-friendly robot system and etc.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.11
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• pp.2495-2502
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• 2012

This paper presents a new structure of phase looked loop (PLL) for replacing a process sensitive resistor in loop filter with an additional charge pump (CP). The additional charge pump works as a resistor in a loop filter. The output of two charge pumps changes same direction according to process variation. The simulation results according to process conditions(SS/TT/FF) demonstrate that the proposed PLL works properly with process variations. It has been designed with a 1.8V $0.18{\mu}m$ CMOS process and proved by simulation with HSPICE.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.463-466
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• 2000

According to the development of the semiconductor micro device technology, IC chip trends the high integrated, low power tendency. Nowadays, it can be showed the tendency of single chip in system level. But in the system level, IC operates by multi power supply voltages. So, semiconductor process is necessary for these multi power operation. Therefore, in this paper, dual gate high voltage device that operate by multi power supply of 5V and 20V fabricated in the 0.5${\mu}{\textrm}{m}$ CMOS process technology and its electrical characteristics were analyzed. The result showed that the characteristics of the 5V device almost met with the SPICE simulation, the SPICE parameters are the same as the single 5V device process. And the characteristics of 20V device showed that gate length 3um device was available without degradation. Its current was 520uA/um, 350uA/um for NMOS, PMOS and the breakdown voltages were 25V, 28V.

• Journal of electromagnetic engineering and science
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• v.10 no.1
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• pp.35-38
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• 2010

A fully integrated parallel-coupled 6-GHz quadrature voltage-controlled oscillator (QVCO) has been designed. The symmetrical parallel-coupled quadrature VCO is implemented using 0.13-${\mu}m$ CMOS process. The measured phase noise is -101.05 dBc/Hz at an offset frequency of 1 MHz. The tuning range of 710 MHz is achieved with a control voltage ranging from 0.3 to 1.4 V. The average output phase error is about $1.26^{\circ}$ including cables and connectors. The QVCO dissipates 10 mA including buffer from the 1.5 V supply voltage. The output characteristic of the differential injection-locked frequency divider (DILFD), which has similar topology to the QVCO, is presented.