• IEIE Transactions on Smart Processing and Computing
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• v.3 no.6
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• pp.416-424
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• 2014

This paper presents an 8-bit pipelined analog-to-digital converter. The supply voltage applied for comparators and other sub-blocks of the ADC were 0.7V and 0.5V, respectively. This low power ADC utilizes the capacitive charge pump technique combined with a source-follower and calibration to resolve the need for the opamp. The differential charge pump technique does not require any common mode feedback circuit. The entire structure of the ADC is based on fully dynamic circuits that enable the design of a very low power ADC. The ADC was designed to operate at 1MS/s in 90nm CMOS process, where simulated results using ADS2011 show the peak SNDR and SFDR of the ADC to be 47.8 dB (7.64 ENOB) and 59 dB respectively. The ADC consumes less than 1mW for all active dynamic and digital circuitries.

• Journal of IKEEE
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• v.23 no.2
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• pp.461-468
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• 2019

A continuous-time Delta-Sigma ADC has various benefits; it does not require an explicit anti-aliasing filter, and it is able to handle wider-band signals with less power consumption in comparison with a discrete-time Delta-Sigma ADC. However, it inherently needs to sample the signal with a high-speed clock, necessitating a complex decimation filter that operates at high speed in order to convert the modulator output to a low-rate high-resolution digital signals without causing aliasing. This paper proposes a continuous-time Delta-Sigma ADC architecture that employs pulse-width modulation and shows that the proposed architecture lends itself to a simpler implementation of the decimation filter using a lookup table.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.53-63
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• 2009

This work proposes a 10b 100MS/s 27.2mW $0.8mm^2$ 0.18um CMOS ADC for WLAN such as an IEEE 802.11n standard. The proposed ADC employs a three-stage pipeline architecture and minimizes power consumption and chip area by sharing as many circuits as possible. Two multiplying DACs share a single amplifier without MOS switches connected in series while the shared amplifier does not show a conventional memory effect. All three flash ADCs use only one resistor ladder while the second and third flash ADCs share all pre-amps to further reduce power consumption and chip area. The interpolation circuit employed in the flash ADCs halves the required number of pre-amps and an input-output isolated dynamic latch reduces the increased kickback noise caused by the pre-amp sharing. The prototype ADC implemented in a 0.18um n-well 1P6M CMOS process shows the DNL and INL within 0.83LSB and 1.52LSB at 10b, respectively. The ADC measures an SNDR of 52.1dB and an SFDR of 67.6dB at a sampling rate of 100MS/s. The ADC with an active die area of $0.8mm^2$ consumes 27.2mW at 1.8V and 100MS/s.

• Applied Biological Chemistry
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• v.39 no.2
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• pp.112-117
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• 1996

Arginine decarboxylase (ADC) is the first enzyme in one of the two pathways of diamine putrescine biosynthesis in plants. The genes encoding ADC have previously been cloned from Escherichia coli, oat and tomato genome. Two degenerate oligonucleotides (17-mer) corresponding to two conserved regions of ADC were used as primers in polymerase chain reaction of rice (Oryza sativa L.) genomic DNA, and an approximately 1.0 kbp fragment was obtained. This amplified PCR product showed an open reading frame which contains 1,022 bp of nucleotide sequences. This PCR product was cloned into pGEM-originated T vector and the short 500 bp PstI digested fragment was subcloned into pGEM-3zf(+/-) vectors to facilitate sequencing. The nucleotide sequence of this PCR product showed about 74% and 70% identity with the same regions of the oat and tomato ADC cDNA sequences, respectively. The predicted amino acid sequence exhibited 45% and 62% identity with oat and tomato ADC polypeptide fragments, respectively. The sequence similarities of 34%, 47% and 38% were previously reported in oat and E. coli, tomato and oat, and tomato and E. coli ADC amino acids, respectively. Therefore, similarities and identities between rice and oat or tomato are remarkably higher than those others of the previous reports. In the highly conserved regions in both the amino acid sequence and spacing regions among the sequences of these three, rice ADC open reading frame also has the exactly same regions with the striking similarity. RNA blot analysis showed that hnc is expressed as a transcript of approximately 2.5 kbP in the rice seedling leaf tissues.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.6
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• pp.30-39
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• 2017

A digital calibration technique based on digital-domain averaging for cyclic ADC is proposed. The proposed calibration compensates for nonlinearity of ADC due to capacitance mismatch of capacitors in 1.5-bit/stage MDAC. A 1.5-bit/stage MDAC with non-matched capacitors has symmetric residue plots with respect to the ideal residue plot. This intrinsic characteristic of residue plot of MDAC is reflected as symmetric A/D transfer functions. A corrected A/D transfer function can be acquired by averaging two transfer functions with non-linearity, which are symmetric with respect to the ideal analog-digital transfer function. In order to implement the aforementioned averaging operation of analog-digital transfer functions, a 12-bit cyclic ADC of this work defines two operational modes of 1.5-bit/stage MDAC. By operating MDAC as the first operational mode, the cyclic ADC acquires 12.5-bits output code with nonlinearity. For the same sampled input analog voltage, the cyclic ADC acquires another 12.5-bits output code with nonlinearity by operating MDAC as the second operational mode. Since analog-digital transfer functions from each of operational mode of 1.5-bits/stage MDAC are symmetric with respect to the ideal analog-digital transfer function, a corrected 12-bits output code can be acquired by averaging two non-ideal 12.5-bits codes. The proposed digital calibration and 12-bit cyclic ADC are implemented by using a $0.18-{\mu}m$ CMOS process in the form of full custom. The measured SNDR(ENOB) and SFDR are 65.3dB (10.6bits) and 71.7dB, respectively. INL and DNL are measured to be -0.30/-0.33LSB and -0.63/+0.56LSB, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.6
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• pp.85-90
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• 2013

In this paper, 6bit SAR ADC tolerant to ionizing radiation is presented. Radiation tolerance is achieved by using the Dummy Gate Assisted (DGA) MOSFET which was proposed to suppress the leakage current induced by ionizing radiation and its comparing sample is designed with the conventional MOSFET. The designed ADC consists of binary capacitor DAC, dynamic latch comparator, and digital logic and was fabricated using a standard 0.35um CMOS process. Irradiation was performed by Co-60 gamma ray. After the irradiation, ADC designed with the conventional MOSFET did not operate properly. On the contrary, ADC designed with the DGA MOSFET showed a little parametric degradation of which DNL was increased from 0.7LSB to 2.0LSB and INL was increased from 1.8LSB to 3.2LSB. In spite of its parametric degradation, analog to digital conversion in the ADC with DGA MOSFET was found to be possible.

• Journal of IKEEE
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• v.14 no.1
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• pp.8-16
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• 2010

This paper presents a design of the successive approximation ADC(SA-ADC) applicable to a midium-low speed analog-front end(AFE) for the maximum 15MS/s CCD image processing. SA-ADC is effective in applications ranging widely between low and mid data rates due to the large power scaling effect on the operating frequency variations in some other way of pipelined ADCs. The proposed design exhibits some distinctive features. The "differential capacitor-coupling scheme" segregates the input sampling behavior from the sub-DAC incorporating the differential input and the sub-DAC output, which prominently reduces the loading throughout the signal path. Determining the MSB(sign bit) from the held input data in advance of the data conversion period, a kind of the signed successive approximation, leads to the reduction of the sub-DAC hardware overhead by 1 bit and the conversion period by 1 cycle. Characterizing the proposed design in a 3.3 V $0.35-{\mu}m$ CMOS process by Spectre simulations verified its validity of the application to CCD analog front-ends.

• Transactions of Materials Processing
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• v.26 no.5
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• pp.306-313
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• 2017

This study investigated the microstructure, tensile strength, and high cycle fatigue properties of ADC12 aluminum alloys with different $Mg+Al_2Ca$ contents manufactured using die casting process. Microstructural observation identified the presence of ${\alpha}-Al$, eutectic Si, $Al_2Cu$, and Fe-intermetallic phases. The increase of $Mg+Al_2Ca$ content resulted in finer pore size and decreased pore distribution. Room temperature tensile strength tests were conducted at strain rate of $1{\times}10^{-3}/sec$. For 0.6%Mg ADC12, measured UTS, YS, and El were 305.2MPa, 157.0MPa, and 2.7%, respectively. For 0.8%Mg ADC12, measured UTS, YS, and El were 311.2 MPa, 159.4 MPa, and 2.4%, respectively. Therefore, 0.8% ADC12 alloy had higher strength and slightly decreased elongation compared to 0.6% Mg ADC12. High cycle fatigue tests revealed that 0.6% Mg ADC12 alloy had a fatigue limit of 150 MPa while 0.8% Mg ADC12 had a fatigue limit of 160MPa. It was confirmed that $Mg+Al_2Ca$ added ADC12 alloy achieved finer, spherical eutectic Si particles, and $Al_2Cu$ phases with greater mechanical and fatigue properties since size and distribution of pores and shrinkage cavities decreased as $Mg+Al_2Ca$ content increased.

• Journal of Convergence for Information Technology
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• v.11 no.9
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• pp.124-129
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• 2021

A time-interpolation technique has been applied to the conventional FLASH analog-to-digital converter (ADC) to increase a number of quantization level, thus it reduces not only a power dissipation, but also minimize an active chip area. In this work, we demonstrated 5-bit ADC which has 31 quantization levels consisting of 16 conventional voltage-mode comparators and 15 time-mode comparators. As a result, we have achieved about 48.4% voltage-mode comparator reductions. The ADC is fabricated in a 14nm fin Field-effect transistor (FinFET) process with an active die area of 0.0024 mm2 while consuming 0.82 mW through a 0.8 V supply. At 400-MS/s conversion rate, the ADC performs 28.03 dB SNDR (4.36 ENOB) at 21MHz input frequency.

• Journal of IKEEE
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• v.26 no.2
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• pp.299-305
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• 2022

Analog-digital converter (ADC) should be one of the most important blocks that convert various physical signals to digital ones for signal processing in the digital signal domain. As most operations of the analog circuit for sensor signal processing have been replaced by digital circuits, high-resolution performance is required for ADC. In addition, low-power must be the critical issue in order to extend the battery time of mobile system. The existing integrating sigma-delta ADCs has a characteristic of high resolution, but due to its low supply voltage condition and advanced technology, circuit error and corresponding resolution degradation of ADC result from the finite gain of the operational amplifier in the integrator. Buffer compensation technique can be applied to minimize gain errors, but there is a disadvantage of additional power dissipation due to the added buffer. In this paper, incremental signal-delta ADC is proposed with buffer switching scheme to minimize current and igh-pass bias circuit to improve the settling time.