Eletrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistor on Sapphire Substrate |
Ha Min-Woo
(서울대학교 전기공학부)
Lee Seung-Chul (서울대학교 전기공학부) Han Min-Koo (서울대학교 전기공학부) Choi Young-Hwan (서울대학교 전기공학부) |
1 | J. Park, S. C. Park, M. W. Shin and C. C, Lee: Proc. Electronic Components and Technology Conference (2002) 617 DOI |
2 | J. E. Barth, K. Verhaege, L. G. Henry and J Richner: IEEE Trans. Packaging Manufact.Technol. Part C 24 Issue:2 (2001) 99 DOI ScienceOn |
3 | G. Meneghesso, S. Podda and M. Vanzi: Microelectron, Reliabil. 41 (2001) 1609 DOI ScienceOn |
4 | K. Zanden, D. M. M.- P. Schreurs, R. Menozzi and M. Borgarino: IEEE Trans. on Electron Devices 46 (1999) 1570 DOI ScienceOn |
5 | K. Bock: Proc. Electric Over Stress (EOS)/Electro-Static Discharge (ESD) Symp. (1997) 1A,1.1 |
6 | S. J. Pearton, F. R. Ren, A. P. Zhang and K. P. Lee: Materials Science and Engineering R30 (2000) 55 DOI ScienceOn |