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A Study for DPDT Switch Design with Defected Ground Structure  

An Ka-Ram (국민대학 전자공학과)
Jeoung Myeung-Sub (국민대학 전자공학과)
Lim Jae-Bong (국민대학 전자공학과)
Cho Hong-Goo (국민대학 전자공학과)
Park Jun-Seok (국민대학 전자공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.54, no.3, 2005 , pp. 132-138 More about this Journal
Abstract
In this paper a DPDT(Double-Pole Double Through) switch with defected ground structure(DGS) is proposed. The equivalent circuit for the proposed switch structure is derived according to based on equivalent circuit of proposed DGS unit structure. The equivalent circuit parameters of DGS unit are extracted by using the circuit analysis method. The on/off operation of the proposed switch is obtained by varying the capacitance of the varactor diode at the defected ground plane. In the case of ON state, the insertion loss of the fabricated DPDT was shown under 1dB. And in OFF state, we found the rejection characteristic over 20dB at the designed frequency 2.45GHz. The experimental results show excellent insertion loss at on state and isolation at off state.
Keywords
DPDT; Switch; DGS; Antiresonance Frequency; Low Pass Filter;
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Times Cited By KSCI : 1  (Citation Analysis)
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