• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.423-426
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• 2017

The designing approaches with consideration offabrication process technologies for high-frequency, high-powered, silicon-based static induction thyristors (SITH) are presented. The effects of doping concentration and thickness on the I-V characteristics and power performance of the devices are discussed. The dependence of SITH switching performances on material, geometric structure, and technological parameters isexamined by using two-dimensional simulations. Thick-epitaxy technology is found to be one of the most critical steps in realizing the proposed structure and switching times, $t_{off}$, of SITH, which may be reduced to below ${\sim}0.26{\mu}s$ for the proposed 1,700 V SITH devicesafter optimization.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.220-221
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• 2003

We optimized the structure of a fully depleted optical thyristor (DOT) to achieve the faster switching speed and the lower power consumption by the depletion of charge at the lower negative voltage. The fabricated optical thyristor shows sufficient nonlinear s-shape I-V characteristics with the switching voltage of 2.85 V and the complete depletion voltage of -8.73 V. In this paper, using a finite difference method (FDM), we calculate the effects of parameters such as doping concentration and thickness of each layer to determine the optimized structure in the view of the fast and low-power-consuming operation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.7 s.349
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• pp.1-6
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• 2006

We show for the first time the optical properties of the selectively oxidized vertical cavity laser (VCL) - depleted optical thyristor (DOT), which has not only a low threshold current, but also a high sensitivity to the optical input light. In order to analyze their switching characteristics, nonlinear s-shaped current-voltage characteristics are calculated and the reverse full-depletion voltages (Vneg's) are obtained as function of semiconductor parameters by using a finite difference method (FDM). The selectively oxidized PnpN VCL-DOT clearly shows the nonlinear s-shaped current-voltage and lasing characteristics. A switching voltage of 5.24 V, a holding voltage of 1.50 V, a spectral response at 854.5 nm, and a very low threshold current of 0.65 mA is measured, making these devices attractive for optical processing applications.

• The Transactions of the Korean Institute of Power Electronics
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• v.17 no.3
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• pp.191-197
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• 2012

This paper proposes a new synthetic test circuit (STC) to confirm the switching operation of thyristor valve in HVDC converter. The proposed STC uses a 6-pulse thyristor converter with 2-phase chopper as a high-current source to provide turn-on current to the test valve. The operation of proposed STC was verified through theoretical analysis and computer simulations. Based on computer simulations, a hardware scaled model was built and tested to confirm the feasibility of implementing a real-size test facility. The proposed system has an advantage of simple structure and operation over the existing system.

• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.12-13
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• 2006

In this paper, RCF(Resistive Companion Form) analysis method which is used to analyze small signal stability problems of non-continuous systems including switching device. The RCF analysis method are applied to the power systems with the thyristor controled FACTS equipments such as TCSC. As a result of simulation, the RCF method is very powerful to calculate the oscillation modes exactly after the switching operations, and useful to analyze the small signal stability of power systems with switching devices such as FACTS equipments. As an applicable example of the RCF method in power system, the one machine infinite bus system including TCSC at generator terminal bus is investigated and the results proved that variations of oscillation modes after periodic switching operations of TCSC can be calculated exactly.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.17-23
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• 2005

The switching characteristics of MOS-Controlled Thyristor(MCT) is studied with variation of the channel length and impurity concentration in ON and OFF FET channel. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator and PSPICE simulator are used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of channel length and impurity concentration in P and N channel. The channel length and N impurity concentration of the proposed MCT power device show the strong affect on the transient characteristics of current and power. The N channel length affects only on the OFF characteristics of power and anode current, while the N doping concentration in P channel affects on the ON and OFF characteristics.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.147-148
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• 2006

Sl-Thyristor는 기존의 Power semlconductor인 단일 IGBT,MOSFET과 비교하여 높은 정격 전압과 대전류의 소호가 가능하며 빠른 turn on swithcing time을 가지는 특성이 있다. 하지만 게이트 드라이버를 이용한 Sl-Thyristor의 turn on 구동시에는 전압구동의 특성과 turn 0ff시에는 전류 구동의 특성에 가까운 구동 특성이 요구되기 때문에 스위칭 요구 특성에 맞는 게이트 드라이버의 설계 및 제어가 쉽지 않다. 본 논문은 펄스 파워 어플리케이션으로 Sl-Thyristor(PT-201 5kV/100A)를 사용하여 pulsed power moduiator용 Sl-Thyristor의 게이트 드라이버의 요구인 빠른 turn on switching 특성과 turn off 시 Si-Thyristor 내의 전하를 빨리 제거하기 위한 조건을 제시하고 있다.

• Proceedings of the KIPE Conference
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• 2010.07a
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• pp.71-72
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• 2010

This paper deals with the SCR thyristor switching characteristics of a 3-phase voltage disturbance generator. The series transformers of the generator require bypass SCR thyristors to provide the source voltage to the output terminal in normal operating mode. The SCR thyristor switching characteristics is quite different according to the connection point to the series transformer. The switching characteristics is analysed and verified through simulation results.

• Proceedings of the KIPE Conference
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• 2010.07a
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• pp.532-533
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• 2010

This paper deals with the SCR thyristor switching characteristics of a 3-phase voltage disturbance generator. The series transformers of the generator require bypass SCR thyristors to provide the source voltage to the output terminal in normal operating mode. The SCR thyristor switching characteristics is quite different according to the connection point to the series transformer. The switching characteristics is analysed and verified through simulation results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.10
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• pp.1034-1040
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• 2004

The latch-up current and switching characteristics of MOS-Controlled Thyristor(MCT) are studied with variation of the channel length and impurity concentration. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator is used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of impurity concentration. The channel length and impurity concentration of the proposed MCT power device show the strong affect on the anode current and turn-off time. The increase of impurity concentration in P and N channels is found to give the increase of latch-up current and forward voltage-drop.