Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Characteristics of Anode Current due to the Impurity Concentration and the Channel Length of Lateral MOS-controlled Thyristor

수평 구조의 MOS-controlled Thyristor에서 채널 길이 및 불순물 농도에 의한 Anode 전류 특성

  • 정태웅 (충북대학교 전기전자공학부) ;
  • 오정근 (충북대학교 전기전자공학부) ;
  • 이기영 (충북대학교 전기전자공학부) ;
  • 주병권 (한국과학기술원 마이크로시스템) ;
  • 김남수 (충북대학교 전기전자공학부)
  • Published : 2004.10.01
Download PDF
⟨ Previous Next ⟩

Abstract

The latch-up current and switching characteristics of MOS-Controlled Thyristor(MCT) are studied with variation of the channel length and impurity concentration. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator is used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of impurity concentration. The channel length and impurity concentration of the proposed MCT power device show the strong affect on the anode current and turn-off time. The increase of impurity concentration in P and N channels is found to give the increase of latch-up current and forward voltage-drop.

Keywords

References

  1. Mohan, Undeland, and Robbins, 'Power Electronics, Wiley', p. 505, 1995
  2. B. ]. Baliga, 'The future of power semiconductor device technology', Proceedings of the IEEE, Vol. 89, p. 822, 2001 https://doi.org/10.1109/5.931471
  3. V. A. K. Temple, 'MOS-Controlled Thyristor', IEEE Int. on Electron Devices Meeting, p. 282, 1984
  4. V. A. K. Temple, 'MOS-Controlled ThyristorA new class of power devices', IEEE Trans. on Electron Devices, ED-33, p. 1609, Oct. 1986
  5. Mohamed N. Darwish, 'Lateral MOS-gate power devices-a unified view', IEEE Trans. Electron Device, Vol. ED-38, p. 1600, 1991
  6. B. ]. Baliga, 'Power Integrated Circuits - A Brief Overview', IEEE Trans. on Electron Devices, ED-33, p. 1936, 1986
  7. Seong-Dong Kim, Han-Soo Kim, Yem-Ik Choi, Byung-Ha Kim, and Min-Koo Han, 'A Lateral MOS Controlled Thyristor with Shorted Anode Structure', in Proc. of 1995 IEEE Int. Conf. Power Electronics and Drive Systems, p. 82, 1995
  8. Mohamed N. Darwish, 'A New Lateral MOS-controlled thyristor', IEEE Trans,Electron Device Letter, Vol. EDL-11, p. 256, 1990