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http://dx.doi.org/10.4313/JKEM.2017.30.7.423

Optimization of 1,700 V Static Induction Thyristor Devices  

Moon, Kyoung-Sook (Global Campus, Gachon Univeristy)
Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwangwoon University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.30, no.7, 2017 , pp. 423-426 More about this Journal
Abstract
The designing approaches with consideration offabrication process technologies for high-frequency, high-powered, silicon-based static induction thyristors (SITH) are presented. The effects of doping concentration and thickness on the I-V characteristics and power performance of the devices are discussed. The dependence of SITH switching performances on material, geometric structure, and technological parameters isexamined by using two-dimensional simulations. Thick-epitaxy technology is found to be one of the most critical steps in realizing the proposed structure and switching times, $t_{off}$, of SITH, which may be reduced to below ${\sim}0.26{\mu}s$ for the proposed 1,700 V SITH devicesafter optimization.
Keywords
Static induction thyristor; Thyristor; Power devices;
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