Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Optical Properties of Vertical Cavity Laser - Depleted Optical Thyristor for Low Threshold Current

낮은 문턱 전류를 위한 Vertical Cavity Laser - Depleted Optical Thyristor 의 레이징 특성에 관한 연구

  • Choi Woon-Kyung (Department of Electrical and Electronic Engineering, Chung-Ang University) ;
  • Choi Young-Wan (Department of Electrical and Electronic Engineering, Chung-Ang University)
  • 최운경 (중앙대학교 전자전기공학부) ;
  • 최영완 (중앙대학교 전자전기공학부)
  • Published : 2006.07.01
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Abstract

We show for the first time the optical properties of the selectively oxidized vertical cavity laser (VCL) - depleted optical thyristor (DOT), which has not only a low threshold current, but also a high sensitivity to the optical input light. In order to analyze their switching characteristics, nonlinear s-shaped current-voltage characteristics are calculated and the reverse full-depletion voltages (Vneg's) are obtained as function of semiconductor parameters by using a finite difference method (FDM). The selectively oxidized PnpN VCL-DOT clearly shows the nonlinear s-shaped current-voltage and lasing characteristics. A switching voltage of 5.24 V, a holding voltage of 1.50 V, a spectral response at 854.5 nm, and a very low threshold current of 0.65 mA is measured, making these devices attractive for optical processing applications.

본 연구에서는 광 논리 및 광 접속에 응용할 수 있는 GaAs/AlGaAs 구조의 완전 공핍 광 싸이리스터(depleted optical thyristor, DOT)에 VCSEL(vertical-cavity surface-emitting laser diode)을 응용하여, 활성층 위, 아래에 1/4 파장 거울층(quarter wavelength reflector stacks)을 제작함으로서 본 구조에서 최초의 레이징 특성을 구현하였고, 그 특성을 측정, 분석하였다. 스위칭 특성을 알아보기 위하여 순방향 전압에서는 비선형 s-자형의 전류-전압 특성을, 역방향 전압에서는 완전 공핍 전압을 모의실험으로 알아보았다. 모의실험을 바탕으로 설계, 제작한 VCL-DOT(Vertical Cavity Laser - Depleted Optical Thyristor)의 스위칭 전압과 전류는 5.24 V, $5{\mu}A$ 이고, 홀딩 전압과 전류는 각각 1.50 V, $100{\mu}A$가 나왔다. 측정된 레이징 문턱 전류는 0.65 mA 이고, 출력 파장은 854.5 nm의 레이징 특성을 확인하였다.

Keywords

References

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