Proceedings of the Optical Society of Korea Conference (한국광학회:학술대회논문집)

Optical Society of Korea (한국광학회)
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Optimization of GaAs／AIGaAs depleted optical thyristor structure for lower depletion voltage

Depleted Optical Thyristor의 공핍전압에 관한 연구

  • 최운경 (중앙대학교 광전자및광통신 연구실) ;
  • 김두근 (중앙대학교 광전자및광통신 연구실) ;
  • 최영완 (중앙대학교 광전자및광통신 연구실) ;
  • 이석 (한국과학기술연구원 광기술연구센터) ;
  • 우덕하 (한국과학기술연구원 광기술연구센터) ;
  • 변영태 (한국과학기술연구원 광기술연구센터) ;
  • 김재헌 (한국과학기술연구원 광기술연구센터) ;
  • 김선호 (한국과학기술연구원 광기술연구센터)
  • Published : 2003.07.01
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Abstract

We optimized the structure of a fully depleted optical thyristor (DOT) to achieve the faster switching speed and the lower power consumption by the depletion of charge at the lower negative voltage. The fabricated optical thyristor shows sufficient nonlinear s-shape I-V characteristics with the switching voltage of 2.85 V and the complete depletion voltage of -8.73 V. In this paper, using a finite difference method (FDM), we calculate the effects of parameters such as doping concentration and thickness of each layer to determine the optimized structure in the view of the fast and low-power-consuming operation.

Keywords