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Optical Properties of Vertical Cavity Laser - Depleted Optical Thyristor for Low Threshold Current  

Choi Woon-Kyung (Department of Electrical and Electronic Engineering, Chung-Ang University)
Choi Young-Wan (Department of Electrical and Electronic Engineering, Chung-Ang University)
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Abstract
We show for the first time the optical properties of the selectively oxidized vertical cavity laser (VCL) - depleted optical thyristor (DOT), which has not only a low threshold current, but also a high sensitivity to the optical input light. In order to analyze their switching characteristics, nonlinear s-shaped current-voltage characteristics are calculated and the reverse full-depletion voltages (Vneg's) are obtained as function of semiconductor parameters by using a finite difference method (FDM). The selectively oxidized PnpN VCL-DOT clearly shows the nonlinear s-shaped current-voltage and lasing characteristics. A switching voltage of 5.24 V, a holding voltage of 1.50 V, a spectral response at 854.5 nm, and a very low threshold current of 0.65 mA is measured, making these devices attractive for optical processing applications.
Keywords
Vertical Cavity Laser; Depleted Optical Thyristor; Optical Switching;
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